SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5550 manufactured by Semtech and Micro Semiconductor. The power/temperature stress tests are presented, and failure analyses are included.
The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N937B manufactured by Motorola and Siemens. Test results, and failure analyses are included.
The effect was studied of power/temperature step stress when applied to the zener diode JANTX1N972B manufactured by Siemens and Motorola. The power/temperature stress tests are presented, and failure analyses are included.
The effect was studied of power/temperature step stress when applied to the diode JANTX1N5622 manufactured by Semtech and Micro-Semiconductor. Test results, and failure analyses are included.
The effect of power/temperature step stress was studied when applied to the Diode JANTX1N5619 manufactured by Semtech and Micro-Semiconductor. Test results, and failure analyses are presented.
The effect of power/temperature step stress when applied to a variety of semiconductor devices was evaluated. Performance of the zener diode JANTX1N4570A manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined in Table 1. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect of power/temperature step stress when applied to the switching diode JANTX1N5554 manufactured by Semtech and Micro Semiconductor was evaluated. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
Data for the purpose of evaluating the effect of power/temperature step stress was studied when applied to the zener diode JANTX1N2970B manufactured by Siemens and General Semiconductor, Inc. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. The tests for determining power/temperature stresses are described, and test results are discussed. Failure analyses for power stress, and temperature stress are presented.
Diode JANTX1N5415 was tested to evaluate the reliability of these devices from different manufacturers, and to gain more knowledge of stress testing. The tests for determining power/temperature step stresses are described, and the test results are discussed. Failure analyses for power stress, and temperature stress are presented.
The effect of power/temperature step stress when applied to the switching diode JANTX1N5615 manufactured by Semtech and Micro semiconductor was examined. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are presented.
Power/temperature step stress was applied to the switching diode JANTX1N1202A manufactured by General Electric and International Rectifier. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are given.
The effect was studied of power/temperature step stress when applied to the diode JANTX1N746A manufactured by Siemens and Motorola. Test results and failure analyses are included.
The effect of power/temperature step stress was studied when applied to the diode JANTX1N5417 manufactured by Micro Semiconductor and Semtech. Test results and failure analyses are included.
The diode JANTX1N645-1 manufactured by Semtech and Micro Semiconductor was subjected to power/temperature step stress in order to assess its reliability. All test samples were subjected to electrical tests after completing the power/temperature step stress point. Control sample units were maintained for verification of the electrical parametric testing. Results are presented in tabular form.
The effect of power/temperature step stress was studied when applied to the switching diode JANTX1N5623 manufactured by Semtech and Micro Semiconductor. Test results and failure analyses are included.
Data for the purpose of evaluating the effect of power/temperature step stress on the diode JANTX1N3893 manufactured by Siemens and Motorola is presented. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured by Siemens and General Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parameteric testing.
The effect of power/temperature step stress when applied to a variety the zener diode JANTX2N3016B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.