NASA NTRS · 19790010036
Diode step stress program for JANTX1N4570A
Abstract
The effect of power/temperature step stress when applied to a variety of semiconductor devices was evaluated. Performance of the zener diode JANTX1N4570A manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined in Table 1. In addition, two control sample units were maintained for verification of the electrical parametric testing.
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1979-02-01. Diode step stress program for JANTX1N4570A. https://ntrs.nasa.gov/citations/19790010036
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