NASA NTRS · 19790010041
Diode step stress program for JANTX1N1202A
Abstract
Power/temperature step stress was applied to the switching diode JANTX1N1202A manufactured by General Electric and International Rectifier. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are given.
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1979-01-01. Diode step stress program for JANTX1N1202A. https://ntrs.nasa.gov/citations/19790010041
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