A 90 GHz Amplifier Assembled Using Flip-Chip Technology

Samoska, L.; Pinsukanjana, P.; Gaier, T.; Smith, R.; Ksendzov, A.; Fitzsimmons, M.; Martin, S.; Lai, R.

NASA NTRS · 20060040558

A 90 GHz Amplifier Assembled Using Flip-Chip Technology

Samoska, L.·Pinsukanjana, P.·Gaier, T.·Smith, R.·Ksendzov, A.·Fitzsimmons, M.·Martin, S.·Lai, R.

Abstract

This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.

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FET amplifiers Millimeter wave FETs bump-bonding millimeter-wave circuits millimeter-wave measurements millimeter-wave technology millimeter-wave Gallium compounds Indium compounds Coplanar waveguides flip-chip devices transistors millimeter-wave amplifiers millimeter wave integarted circuits Millimeter wave

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Samoska, L., Pinsukanjana, P., Gaier, T., Smith, R., Ksendzov, A., Fitzsimmons, M., Martin, S., Lai, R.. 1999-01-01. A 90 GHz Amplifier Assembled Using Flip-Chip Technology. https://ntrs.nasa.gov/citations/20060040558

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