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Samoska, L.

Publications and source records attributed to Samoska, L..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

W-band Heterodyne Receiver Module with 27 K Noise Temperature

We present noise temperature and gain measurements of a W-band heterodyne module populated with MMIC LNAs designed and fabricated using 35nm InP HEMT process. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (25 K) temperatures. At 25 K physical temperature, the module has a noise temperature in the range of 27-45 K over the frequency band of 75-111 GHz. The module gain varies between 15 dB and 27 dB. The band-averaged module noise temperature of 350 K and 33 K were measured over 80-110 GHz for the physical temperature of 300 K and 25 K, respectively. The resulting cooling factor is 10.6.

heterodyne module↗
NASA NTRS2011

A Cloud and Precipitation Radar System Concept for the ACE Mission

One of the instruments recommended for deployment on the Aerosol/Cloud/Ecosystems (ACE) mission is a new advanced cloud profiling radar. In this paper, we describe such a radar design, called ACERAD, which has 35- and 94-GHz channels, each having Doppler and dual-polarization capabilities. ACERAD will scan at Ka-band and will be nadir-looking at W-band. To get a swath of 25-30 km, considered the minimum useful for Ka-band, ACERAD needs to scan at least 2 degrees off nadir; this is at least 20 beamwidths, which is quite large for a typical parabolic reflector. This problem is being solved with a Dragonian design; a scaled prototype of the antenna is being fabricated and will be tested on an antenna range. ACERAD also uses a quasi-optical transmission line at W-band to connect the transmitter to the antenna and antenna to the receiver. A design for this has been completed and is being laboratory tested. This paper describes the current ACERAD design and status.

CloudSat Mission↗
NASA NTRS2008

First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.

monolithic microwave integrated circircuit↗
NASA NTRS2006

On-wafer vector network analyzer measurements in the 220-325 Ghz frequency band

We report on a full two-port on-wafer vector network analyzer test set for the 220-325 GHz (WR3) frequency band. The test set utilizes Oleson Microwave Labs frequency extenders with the Agilent 8510C network analyzer. Two port on-wafer measurements are made with GGB Industries coplanar waveguide (CPW) probes. With this test set we have measured the WR3 band S-parameters of amplifiers on-wafer, and the characteristics of the CPW wafer probes. Results for a three stage InP HEMT amplifier show 10 dB gain at 235 GHz [1], and that of a single stage amplifier, 2.9 dB gain at 231 GHz. The approximate upper limit of loss per CPW probe range from 3.0 to 4.8 dB across the WR3 frequency band.

coplanar waveguides↗
NASA NTRS2002

Packaging of microwave integrated circuits operating beyond 100 GHz

Several methods of packaging high speed (75-330 GHz) InP HEMT MMIC devices are discussed. Coplanar wirebonding is presented with measured insertion loss of less than 0.5dB and return loss better than -17 dB from DC to 110 GHz. A motherboard/daughterboard packaging scheme is presented which supports minimum loss chains of MMICs using this coplanar wirebonding method. Split waveguide block packaging approaches are presented in G-band (140-220 GHz) with two types of MMIC-waveguide transitions: E-plane probe andantipodal finline.

HEMT MMICS power amplifiers↗