Engineering topics
Lai, R.
Publications and source records attributed to Lai, R..
W-band Heterodyne Receiver Module with 27 K Noise Temperature
We present noise temperature and gain measurements of a W-band heterodyne module populated with MMIC LNAs designed and fabricated using 35nm InP HEMT process. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (25 K) temperatures. At 25 K physical temperature, the module has a noise temperature in the range of 27-45 K over the frequency band of 75-111 GHz. The module gain varies between 15 dB and 27 dB. The band-averaged module noise temperature of 350 K and 33 K were measured over 80-110 GHz for the physical temperature of 300 K and 25 K, respectively. The resulting cooling factor is 10.6.
First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies
Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.
Broadband Characterization of a 100 to 180 GHz Amplifier
Atmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic millimeter-wave Integrated circuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circuit was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT).
Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate
In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.
Cryogenic measurements of 183 GHz MMIC low noise amplifiers
We report the packaging and first measurement of Indium Phosphide (InP) monolithic microwave integrated circuits (MMICs) low noise amplifiers (LNAs) operating at cryogenic temperatures.
0.1um InP HEMT devices and MMICs for cryogenic low noise amplifiers from x-band to w-band
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MMIC low-noise amplifiers and applications above 100 GHz
This paper will propose one vision for an interstellar program. It will include a discussion of mission concepts as well as technological requirements for accomplishing those missions.
MMIC Low-Noise Amplifiers and Applications above 100 GHz
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Monolithic Power Amplifiers Covering 70-115 GHz
A number of monolithic W-band power amplifiers have been developed for local oscillators of the Far Infrared and Sub-millimeter Telescope.
MMIC Power Amplifiers as Local Oscillator Drivers for FIRST
The Heterodyne Instrument (HIFI) for the Far-Infrared and Sub-millimeter Telescope (FIRST) requires local oscillators well into the terahertz frequency range.
W-Band InP Wideband MMIC LNA with 30K Noise Temperature
This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.
MMIC Power Amplifier Chip Set Developed for 70-115 GHz
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160-190 GHz Monolithic Low Noise Amplifiers
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process.
W-Band InP Wideband MMIC LNA With 30K Noise Temperature
This paper describes a millimeter wave low noise amplifier with extraordinary low noise, low power consumption, and wide frequency range.
A 90 GHz Amplifier Assembled Using Flip-Chip Technology
This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.