A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-based HEMT
We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds.
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Engineering topics
Pinsukanjana, P.
Publications and source records attributed to Pinsukanjana, P..
A 90 GHz Amplifier Assembled Using Flip-Chip Technology
This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.
FET amplifiers Millimeter wave FETs bump-bonding m↗