NASA NTRS · 19800000280
Progress in MOSFET double-layer metalization
Abstract
Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).
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Gassaway, J. D., Trotter, J. D., Wade, T. E.. 1980-09-01. Progress in MOSFET double-layer metalization. https://ntrs.nasa.gov/citations/19800000280
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