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Results for “STRESSES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,441 records · Page 80

All sources NASA NTRS DOE OSTI

NASA NTRS1978

Buried wire gage for wall shear stress measurements

A buried wire gage for measuring wall shear stress in fluid flow was studied and further developed. Several methods of making this relatively new type of gage were examined to arrive at a successful technique that is well-suited for wind-tunnel testing. A series of measurements was made to demonstrate the adequacy of a two-point calibration procedure for these gages. The buried wire gage is also demonstrated to be ideally suited for quantitative measurement of wall shear stress in wind-tunnel testing.

Murthy, V. S.↗

NASA NTRS1978

Tensile and compressive stress-strain behavior of heat treated boron-aluminum

An experimental study was conducted to assess the effects of heat treatment and cyclic mechanical loading on the tensile and compressive stress-strain behavior of six boron-aluminum composites having different laminate orientations and being subjected to different heat treatments. The heat treatments were as-fabricated, T6, and T6N consisting of T6 treatment followed by cryogenic quench in liquid nitrogen prior to testing. All laminates were tested in monotonic and cyclic compression, while the tensile-test data are taken from the literature for comparison purposes. It is shown that the linear elastic range of the T6- and T6N-condition specimens is larger than that of the as-fabricated specimens, and that cyclic loading in tension or compression strain hardens the specimens and extends the linear elastic range. For laminates containing 0-deg plies, the stress-strain behavior upon unloading is found to be nonlinear, whereas the other laminates exhibit a linear behavior upon unloading. Specimens in the T6 and T6N conditions show higher strain hardening than the as-fabricated specimens.

Kennedy, J. M.↗

NASA NTRS1980

Stress corrosion in high-strength aluminum alloys

Report describes results of stress-corrosion tests on aluminum alloys 7075, 7475, 7050, and 7049. Tests compare performance of original stress-corrosion-resistant (SCR) aluminum, 7075, with newer, higher-strength SCR alloys. Alloys 7050 and 7049 are found superior in short-transverse cross-corrosion resistance to older 7075 alloy; all alloys are subject to self-loading effect caused by wedging of corrosion products in cracks. Effect causes cracks to continue to grow, even at very-low externally applied loads.

Dorward, R. C.↗

NASA NTRS1980

Stress-relieved solder joints

Mechanical stress on solder joints is reduced by procedure for soldering electronic components to circuit boards. Procedure was developed for radio-frequency (RF) strip-line circuits, for which dimensions must be carefully controlled to minimize parasitic capacitance and inductance. Procedure consists of loosening component from its mounting after each lead is soldered relieving induced stresses before next soldering step.

Zemenick, C. J.↗

NASA NTRS1978

Apparatus and method for reducing thermal stress in a turbine rotor

A gas turbine is described wherein the thermal stresses in the turbine rotor are reduced. The rotor includes a central disc with a peripheral rim, and a plurality of blades extending radially outward from the rim. To reduce thermal stresses, a duct arrangement is provided which selectively directs hot gases from the turbine combustor to the rim during the turbine start up. The hot gases from the combustor serve to heat the rim, and decrease the start up period necessary to bring the temperature profile of the rotor into the operating temperature range. After the start up period, the duct arrangement is then used to direct cool gases from the turbine compressor to the rim of the rotor in order to maintain a lower rotor equilibrium temperature.

Heller, J. A.↗

NASA NTRS1978

User's manual for FRAC3D: Supplement to report on stress analysis for structures with surface cracks

The FRAC3D computer program, designed for use in analyzing stresses in structures (including plates, bars, or blocks) which may contain part-circular surface cracks or embedded circular cracks is described. Instructions are provided for preparing input, including that for the supporting programs LATTICE and MATSOL as well as for FRAC3D. The course of a substantial illustrative calculation is shown with both input and output. The formulas underlying the calculations are summarized and related to the subroutines in which they are used. Many issues of strategy in using this program for analysing stresses around surface cracks are elucidated.

Bell, J. C.↗

NASA NTRS1979

Transistor step stress testing program for JANTX2N2905A

The effect of power/temperature step stress when applied to the transistor JANTX2N2905A manufactured by Texas Instruments and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests outlined in Table 2 after completing the prior power/temperature step stress point.

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NASA NTRS1979

Diode step stress testing program for JANTX1N5550

The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5550 manufactured by Semtech and Micro Semiconductor. The power/temperature stress tests are presented, and failure analyses are included.

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NASA NTRS1979

Diode step stress testing program for JANTX1N972B

The effect was studied of power/temperature step stress when applied to the zener diode JANTX1N972B manufactured by Siemens and Motorola. The power/temperature stress tests are presented, and failure analyses are included.

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NASA NTRS1979

Transistor step stress program for JANTX2N4150

Reliability analysis of the transistor JANTX2N4150 manufactured by General Semiconductor and Transitron is reported. The discrete devices were subjected to power and temperature step stress tests and then to electrical tests after completing the power/temperature step stress point. Control sample units were maintained for verification of the electrical parametric testing. Results are presented.

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NASA NTRS1979

Transistor step stress program for JANTX2N2432A

Power/temperature step stress was applied to the transistor JANTX2N2432A manufactured by Crystalonics and Texas Instruments. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point.

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NASA NTRS1979

Diode step stress program for JANTX1N5615

The effect of power/temperature step stress when applied to the switching diode JANTX1N5615 manufactured by Semtech and Micro semiconductor was examined. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are presented.

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NASA NTRS1979

Diode step stress program for JANTX1N1202A

Power/temperature step stress was applied to the switching diode JANTX1N1202A manufactured by General Electric and International Rectifier. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are given.

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NASA NTRS1979

Transistor step stress program for JANTX2N2060

The effect of power/temperature step stress when applied to the dual transistor JANTX2N2060 manufactured by Raytheon and Motorola is reported. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are given.

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NASA NTRS1979

Diode step stress program for JANTX1N645-1

The diode JANTX1N645-1 manufactured by Semtech and Micro Semiconductor was subjected to power/temperature step stress in order to assess its reliability. All test samples were subjected to electrical tests after completing the power/temperature step stress point. Control sample units were maintained for verification of the electrical parametric testing. Results are presented in tabular form.

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NASA NTRS1979

Transistor step stress program for JANTX2N2219A

Power/temperature step stress was applied to the dual transistor JANTX2N2219A manufactured by Texas Instruments and National Semiconductor. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to electrical tests after completing the prior power/temperature step stress point.

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NASA NTRS1979

Diode step stress program for JANTX1N649-1

The effect of power/temperature step stress when applied to a variety of semiconductor devices is evaluated. A total of 48 samples were submitted to be processed. Control sample units were maintained for verification of the electrical parametric testing. The test circuit was used to power all of the test devices during the power/temperature stress conditions.

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NASA NTRS1979

Transistor step stress testing program for JANTX2N2369A

The effect is reported of power/temperature step stress when applied to the transistor JANTX2N2369A manufactured by Raytheon and National Semiconductor. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. The power/thermal stress tests are described, and failure analyses are presented.

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