NASA NTRS · 19790010045
Transistor step stress program for JANTX2N2060
Abstract
The effect of power/temperature step stress when applied to the dual transistor JANTX2N2060 manufactured by Raytheon and Motorola is reported. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are given.
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1979-01-01. Transistor step stress program for JANTX2N2060. https://ntrs.nasa.gov/citations/19790010045
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