NASA NTRS · 19790010024
Transistor step stress testing program for JANTX2N2905A
Abstract
The effect of power/temperature step stress when applied to the transistor JANTX2N2905A manufactured by Texas Instruments and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests outlined in Table 2 after completing the prior power/temperature step stress point.
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1979-02-01. Transistor step stress testing program for JANTX2N2905A. https://ntrs.nasa.gov/citations/19790010024
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