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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Data for the purpose of evaluating the effect of power/temperature step stress on the diode JANTX1N3893 manufactured by Siemens and Motorola is presented. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect of power/temperature step stress when applied to a variety of semiconductor devices is evaluated. A total of 48 samples were submitted to be processed. Control sample units were maintained for verification of the electrical parametric testing. The test circuit was used to power all of the test devices during the power/temperature stress conditions.
The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured by Siemens and General Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parameteric testing.
The effect of power/temperature step stress when applied to a variety the zener diode JANTX2N3016B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect of power/temperature step stress when applied to the zener diode JANTX1N3031B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect of power/temperature step stress when applied to the switching diode JANTX1N5618 manufactured by Semtech and Micro Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect is reported of power/temperature step stress when applied to the transistor JANTX2N2369A manufactured by Raytheon and National Semiconductor. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. The power/thermal stress tests are described, and failure analyses are presented.
The effect of power/temperature step stress when applied to a variety of voltage regulating diodes manufactured by Texas Instruments and Siemens was investigated. Test requirements are described and results are tabulated. Failure modes are discussed.
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied to the transistor JANTX2N2945A manufactured by Raytheon and Teledyne is presented. A total of 48 samples from each manufacturer was divided equally (16 per group) into three groups and submitted to the processes outlined. In addition, two control units were maintained for verification of the electrical parametric testing.
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied to the diode JANTX1N5420 manufactured by Unitrode and Micro-Semiconductor is presented. A total of 48 samples from each manufacturer was submitted to the processes outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect was studied of power/temperature step stress when applied to the dual transistor JANTX2N3811 manufactured by Motorola and National Semiconductor. A total of 48 samples from Motorola and 47 from National Semiconductor was submitted to the processes. In addition, two control sample units were maintained for verification of the electrical parametric testing. The tests for determining power/temperature stresses are described, and test results are discussed. Failure analyses for power stress, and temperature stress are presented.
The effect of power/temperature step stress when applied to the transistor JANTX2N2484, manufactured by Raytheon and Teledyne was evaluated. Forty-eight samples from each manufacturer were divided equally (16 per group) into three groups and submitted to the processes outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
A microwave stepped frequency radiometer operating from 4.5 to 7.2 gigahertz has been designed, fabricated and flight tested in an airborne remote sensing mission by NASA Langley Research Center. This paper describes the design of this precision microwave Dicke-switched noise feedback radiometer, calibration techniques and presents typical results from remote sensing mission employing this radiometer.
Report describes extensive program to test behavior of discrete diodes and transistors subjected to power and temperature overstress. Commercially available bipolar and field effect transistors and diodes were stressed between 0.5 and 1.75 times maximum rated power. Two groups were temperature stressed: 160 hour steps starting at 75 C to maximum of 300 C. Cumulative failures and changes in device parameters were monitored and reasons for failures presented.
Process that combines microwave foaming and curing of polyimide precursors in single step produces fire-resistant foam slabs of much larger volume than has previously been possible. By adding selected conductive fillers to powder precursors and by using high-power microwave oven, foam slabs with dimensions in excess of 61 by 61 by 7.6 cm are made. Typical foaming and curing and curing time is 35 minutes in microwave oven with additional 1 to 2 hour postcure in conventional oven.
The paper studies incompressible flow over a backward-facing step in order to investigate the flow characteristics in the separated shear layer, the reattachment zone, and the redeveloping boundary layer after reattachment. It is shown that turbulent intensities and shear stress reach maxima in the reattachment zone, followed by rapid decay near the surface after reattachment. In addition, it is found that downstream of reattachment, the flow returns very slowly to the structure of an ordinary turbulent boundary layer.
The ionization balance in diffusion-dominated discharges may depend on both one- and two-step ionization processes. The Spenke diffusion equation describing such conditions is solved in this paper by the Rayleigh-Ritz variational method. Simple analytic approximations to the density profile, and the similarity relation between the equation parameter, and the discharge dimensions, are derived for planar and cylindrical geometry and compared with exact computations for certain limiting cases.
Seasat, the satellite dedicated to the study of the oceans using microwave sensors, collected a data set containing information on sea surface winds, sea surface temperatures, wave heights, wave directions, internal waves, currents, tides, the marine geoid, and atmospheric water content. The first two steps of the performance evaluation of the satellite have been completed: (1) the engineering assessment and (2) the sensor evaluation. The results are encouraging for the performance of the instruments and the first level of data processing algorithms.