NASA NTRS · 19790010082
Transistor step stress program for JANTX2N2945A
Abstract
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied to the transistor JANTX2N2945A manufactured by Raytheon and Teledyne is presented. A total of 48 samples from each manufacturer was divided equally (16 per group) into three groups and submitted to the processes outlined. In addition, two control units were maintained for verification of the electrical parametric testing.
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1979-01-01. Transistor step stress program for JANTX2N2945A. https://ntrs.nasa.gov/citations/19790010082
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