NASA NTRS ยท 19790010083
Diode step stress testing program for JANTX1n5420
Abstract
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied to the diode JANTX1N5420 manufactured by Unitrode and Micro-Semiconductor is presented. A total of 48 samples from each manufacturer was submitted to the processes outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
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1979-01-01. Diode step stress testing program for JANTX1n5420. https://ntrs.nasa.gov/citations/19790010083
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