NASA NTRS · 19790010085
Transistor step stress testing program for JANTX2N2484
Abstract
The effect of power/temperature step stress when applied to the transistor JANTX2N2484, manufactured by Raytheon and Teledyne was evaluated. Forty-eight samples from each manufacturer were divided equally (16 per group) into three groups and submitted to the processes outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
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1979-01-01. Transistor step stress testing program for JANTX2N2484. https://ntrs.nasa.gov/citations/19790010085
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