Diode step stress program for JANTX1N5554
Data were compiled for the purpose of evaluating the effect of power/temperature step stress when applied to a variety of semiconductor devices. The switching diode JANTX1N5554 is examined.
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Diode step stress testing program for JANTX1N5550
The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5550 manufactured by Semtech and Micro Semiconductor. The power/temperature stress tests are presented, and failure analyses are included.
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Diode step stress testing program for JANTX1N937b
The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N937B manufactured by Motorola and Siemens. Test results, and failure analyses are included.
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Diode step stress testing program for JANTX1N972B
The effect was studied of power/temperature step stress when applied to the zener diode JANTX1N972B manufactured by Siemens and Motorola. The power/temperature stress tests are presented, and failure analyses are included.
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Transistor step stress testing program for JANTX2N4856
The effect of power/temperature step stress when applied to a field effect transistor JANTX2N4856 manufactured by Texas Instruments and Teledyne was evaluated. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control units were maintained for verification of the electrical parametric testing.
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Transistor step stress testing program for JANTX2N3637
Data for the purpose of evaluating the effect of power/temperature step stress when applied to a variety of semiconductor devices are presented. The transistor JANTX2N3637 manufactured by Transitron and Motorola is studied. A total of 48 samples from Transitron and 41 samples from Motorola were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. Results are reported.
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Diode step stress program for JANTX1N5622
The effect was studied of power/temperature step stress when applied to the diode JANTX1N5622 manufactured by Semtech and Micro-Semiconductor. Test results, and failure analyses are included.
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Transistor step stress program for JANTX2N2920
Data on the effect of power/temperature step stress when applied to the dual transistor JANTX2N2920 manufactured by Fairchild and National Semiconductor are presented. Fifty one (51) samples from Fairchild and 44 from National Semiconductor were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
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Diode step stress program for JANTX1N5619
The effect of power/temperature step stress was studied when applied to the Diode JANTX1N5619 manufactured by Semtech and Micro-Semiconductor. Test results, and failure analyses are presented.
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Diode step stress program for JANTX1N4570A
The effect of power/temperature step stress when applied to a variety of semiconductor devices was evaluated. Performance of the zener diode JANTX1N4570A manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined in Table 1. In addition, two control sample units were maintained for verification of the electrical parametric testing.
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Diode step stress program for JANTX1N5552
The effect of power/temperature step stress when applied to the switching diode JANTX1N5554 manufactured by Semtech and Micro Semiconductor was evaluated. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
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Diode step stress program for JANTX1N2970b
Data for the purpose of evaluating the effect of power/temperature step stress was studied when applied to the zener diode JANTX1N2970B manufactured by Siemens and General Semiconductor, Inc. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. The tests for determining power/temperature stresses are described, and test results are discussed. Failure analyses for power stress, and temperature stress are presented.
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Diode step stress program for JANTX1N5415
Diode JANTX1N5415 was tested to evaluate the reliability of these devices from different manufacturers, and to gain more knowledge of stress testing. The tests for determining power/temperature step stresses are described, and the test results are discussed. Failure analyses for power stress, and temperature stress are presented.
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Diode step stress program for JANTX1N746A
The effect was studied of power/temperature step stress when applied to the diode JANTX1N746A manufactured by Siemens and Motorola. Test results and failure analyses are included.
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Diode step stress program for JANTX1N5417
The effect of power/temperature step stress was studied when applied to the diode JANTX1N5417 manufactured by Micro Semiconductor and Semtech. Test results and failure analyses are included.
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Transistor step stress program for JANTX2N2605
The effect was studied of power/temperature step stress when applied to the PNP transistor JANTX2N2605 manufactured by Raytheon and National Semiconductor. Test results and failure analyses are included.
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Diode step stress program for JANTX1N5623
The effect of power/temperature step stress was studied when applied to the switching diode JANTX1N5623 manufactured by Semtech and Micro Semiconductor. Test results and failure analyses are included.
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Diode step stress program for JANTX1N3893
Data for the purpose of evaluating the effect of power/temperature step stress on the diode JANTX1N3893 manufactured by Siemens and Motorola is presented. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
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