Silicon Heterojunction Field Performance

Jordan, Dirk (ORCID:0000000221837489); Kern, Dana; Johnston, Steven; Moutinho, Helio; Jiang, Chun-Sheng; Young, M.; Norman, Andrew (ORCID:000000016368521X); Deline, Chris (ORCID:0000000298678930); Bhoopathy, Ragavi; Hameiri, Ziv; Sinha, A.; Schelhas, Laura; Colvin, Dylan; Davis, Kris

doi:10.1109/jphotov.2017.2765680

DOE OSTI · 1887280

Silicon Heterojunction Field Performance

Jordan, Dirk (ORCID:0000000221837489)·Kern, Dana·Johnston, Steven·Moutinho, Helio·Jiang, Chun-Sheng·Young, M.·Norman, Andrew (ORCID:000000016368521X)·Deline, Chris (ORCID:0000000298678930)·Bhoopathy, Ragavi·Hameiri, Ziv·Sinha, A.·Schelhas, Laura·Colvin, Dylan·Davis, Kris

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Abstract

The market share of silicon heterojunction (SHJ) modules are expected to increase in the following years. The presentation discusses field performance of SHJ and compares it to other high-efficiency modules. In-depth materials characterization is used to understand the origins of degradation in these type of modules.

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Jordan, Dirk (ORCID:0000000221837489), Kern, Dana, Johnston, Steven, Moutinho, Helio, Jiang, Chun-Sheng, Young, M., Norman, Andrew (ORCID:000000016368521X), Deline, Chris (ORCID:0000000298678930), Bhoopathy, Ragavi, Hameiri, Ziv, Sinha, A., Schelhas, Laura, Colvin, Dylan, Davis, Kris. 2022-09-07. Silicon Heterojunction Field Performance. https://doi.org/10.1109/jphotov.2017.2765680

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