NASA NTRS · 19920041440
Post irradiation effects (PIE) in integrated circuits
Abstract
Post-irradiation effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. Data presented show failure due to rebound after a 10 krad(Si) dose. In particular, five device types are investigated with varying PIE response. Special attention has been given to the HI1-507A analog multiplexer because its PIE response is extreme. X-ray diffraction has been uniquely employed to measure physical stress in the HI1-507A metallization. An attempt has been made to show a relationship between stress relaxation and radiation effects. All data presented support the current MIL-STD Method 1019.4 but demonstrate the importance of performing PIE measurements, even when mission doses are as low as 10 krad(Si).
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Shaw, D. C., Lowry, L., Barnes, C., Zakharia, M., Agarwal, S., Rax, B.. 1991-12-01. Post irradiation effects (PIE) in integrated circuits. https://ntrs.nasa.gov/citations/19920041440
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