Engineering topics
Publications and source records attributed to Lowry, L..
This paper will describe the Mars 2001 Lander mission battery requirements and will contain results of the cell testing conducted to-date in support of the mission.
Explore the source record for details and available documents.
Optically/electrically operable flexible film microactuators that can offer up to two orders higher efficiency of photonic to mechanical conversion compared to ceramic actuators are conceptualized.
While the US and USSR have collaborated in human space flight and Earth application missions, this is the first time in the cultural relations between our two countries that American and Russian specialists have been authorized to work together on a joint space science mission. A study was commissioned to investigate the possibility of a combined US/Russian mission in the 2001 opportunity. A basic option for a proposed mission (abbreviated as MT 2001) was adopted. This option is described.
We report on resistivity and chemical stability of Cr/Au bilayers deposited by sputtering on three kinds of substrates: alumina, aluminum nitride and aluminum nitride coated alumina. The insertion loss of Cr/Au microstrip lines fabricated on these three substrates was low and stable after 100 cycles in the -65 degree C to 125 degree C temperature range.
Commercial and government communication, radar, and information systems face the challenge of cost and mass reduction via the application of advanced packaging technology. A majority of both government and industry support has been focused on low frequency digital electronics.
Explore the source record for details and available documents.
Gold has been used as a conductor material in many microelectronic applications because of its low resistivity, bondability, and oxidation/corrosion resistance.
Future space programs place a variety of needs on storage technologies.
A new millimeter-wave package architecture with supporting electrical, mechanical and material science experiment and analysis is presented.
Explore the source record for details and available documents.
The introduction of polythylene -2, 6-Naphthalate (PEN) semicrystalline film with thicknesses of 0.9mu, 1.5mu, 4.0Mu and community. Its unique chemical and high temparterure stability, as well as superior thermo-mechanical properties allow ultra thin ( 2mu) PEN film to be processed into miniature multilayer chip capacitors for surface mount technology (SMT) application that can be used with standard soldering techniques.
Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V(ot) and V(it) were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of Delta V(it) and Delta V(ot) taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986, 1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device.
Post-irradiation effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. Data presented show failure due to rebound after a 10 krad(Si) dose. In particular, five device types are investigated with varying PIE response. Special attention has been given to the HI1-507A analog multiplexer because its PIE response is extreme. X-ray diffraction has been uniquely employed to measure physical stress in the HI1-507A metallization. An attempt has been made to show a relationship between stress relaxation and radiation effects. All data presented support the current MIL-STD Method 1019.4 but demonstrate the importance of performing PIE measurements, even when mission doses are as low as 10 krad(Si).