Engineering topics
Publications and source records attributed to Rax, B..
Total dose test of commercially available radiation hardened bipolar voltage regulators and references show reduced sensitivity to dose rate and varying sensitivity to bias under pressure. Behavior of critical parameters in different dose rate and bias conditions is compared and the impact to hardness assurance methodology is discussed.
This paper discusses proton degradation of linear and digital optocouplers. One obvious way to harden optocoupler technologies is to select LEDs that are more resistant to displacement damage.
The severe degradation of optocouplers in space has been shown to be mainly due to proton displacement damage in the light-emitting diodes that are used within the optocouplers.
Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost.
Proton testing of linear circuits has identified devices where significantly more damage occurs at equivalent total dose levels with protons than tests with gamma rays.
This paper discusses total dose effects on voltage-to-frequency converters which impose different requirements on internal circuitry, and are also very high-precision devices (for example, linearity is typically specified between 0.002 and 0.05%).
Radiation effects and testing programs on commercial off-the-shelf (COTS) devices and circuits, which are important for NASA programs, are discussed. Demands for increased performance levels in spacecraft systems is stimulating the use of electronic and photonic devices. Some advances in electronics to reach high performance will result in the miniaturization of devices, which will lead to increased radiation vulnerability.
In this paper we discuss radiation effects issues that have become important for NASA programs in the last few years. Particularly critical is the increasing usage of commericial off-the-shelf (COTS) devices and circuits in interplanetary missions that experience significant exposure to radiation.
Post-irradiation effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. Data presented show failure due to rebound after a 10 krad(Si) dose. In particular, five device types are investigated with varying PIE response. Special attention has been given to the HI1-507A analog multiplexer because its PIE response is extreme. X-ray diffraction has been uniquely employed to measure physical stress in the HI1-507A metallization. An attempt has been made to show a relationship between stress relaxation and radiation effects. All data presented support the current MIL-STD Method 1019.4 but demonstrate the importance of performing PIE measurements, even when mission doses are as low as 10 krad(Si).