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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Correlation of CsK{sub 2}Sb photocathode lifetime with antimony thickness

CsK{sub 2}Sb photocathodes with quantum efficiency on the order of 10% at 532 nm, and lifetime greater than 90 days at low voltage, were successfully manufactured via co-deposition of alkali species emanating from an effusion source. Photocathodes were characterized as a function of antimony layer thickness and alkali consumption, inside a vacuum chamber that was initially baked, but frequently vented without re-baking. Photocathode lifetime measured at low voltage is correlated with the antimony layer thickness. Photocathodes manufactured with comparatively thick antimony layers exhibited the best lifetime. We speculate that the antimony layer serves as a reservoir, or sponge, for the alkali.

36 MATERIALS SCIENCE↗
DOE OSTI2016

First principles calculation of two dimensional antimony and antimony arsenide

This work focuses on the strain dependence of the electronic properties of two dimensional antimony (Sb) material and its alloy with As (SbAs) using density functional theory based first principles calculations. Both systems show indirect bandgap semiconducting character which can be transformed into a direct bandgap material with the application of relatively small strain.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi{sub 2-x}Sb{sub x}Te{sub 3}) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi{sub 2-x}Sb{sub x}Te{sub 3} matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties. - Graphical abstract: PbTe nanoparticles introduced into p-type Bi{sub 2}Te{sub 3} by incipient wetness results in decreased lattice thermal conductivity, but also acts as an electronic dopant, resulting in an overall decrease in thermoelectric performance. Highlights: Black-Right-Pointing-Pointer Composites of PbTe nanoparticles in Bi{sub 2-x}Sb{sub x}Te{sub 3} were formed by incipient wetness. Black-Right-Pointing-Pointer PbTe nanoparticles leads to decreased {kappa}{sub l}, consistent with phonon scattering. Black-Right-Pointing-Pointer PbTe nanoparticles lead to decreased S and {rho}, due to increased carriers. Black-Right-Pointing-Pointer Collateral doping from PbTe leads to decreased ZT with increasing concentration. Black-Right-Pointing-Pointer Immiscible systems are preferred for improved ZT.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Off-stoichiometric silver antimony telluride: An experimental study of transport properties with intrinsic and extrinsic doping

AgSbTe{sub 2} is a thermoelectric semiconductor with an intrinsically low thermal conductivity and a valence band structure that is favorable to obtaining a high thermoelectric figure of merit zT. It also has a very small energy gap Eg ∼ 7.6 ± 3 meV. As this gap is less than the thermal excitation energy at room temperature, near-intrinsic AgSbTe{sub 2} is a two carrier system having both holes (concentration p) and electrons (n). Good thermoelectric performance requires heavy p-type doping (p > > n). This can be achieved with native defects or with extrinsic doping, e.g. with transition metal element. The use of defect doping is complicated by the fact that many of the ternary Ag-Sb-Te and pseudo-binary Sb{sub 2}Te{sub 3}-Ag{sub 2}Te phase diagrams are contradictory. This paper determines the compositional region most favorable to creating a single phase material. Through a combination of intrinsic and extrinsic doping, values of zT > 1 are achieved, though not on single-phased material. Additionally, we show that thermal conductivity is not affected by defects, further demonstrating that the low lattice thermal conductivity of I-V-VI{sub 2} materials is due to an intrinsic mechanism, insensitive to changes in defect structure.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structural and magnetic properties of nickel antimony ferrospinels

Spinel-type compounds of Fe–Ni–Sb–O system were synthesized as polycrystalline powders. The crystal and magnetic properties were investigated using X-ray and neutron powder diffraction, Mössbauer and X-ray absorption spectroscopy and magnetization measurements. The samples crystallize in the cubic system, space group Fd – 3 m. The distribution of cations between octahedral and tetrahedral sites was refined from the diffraction data sets using constraints imposed by the magnetic, Mössbauer and EDS results and the ionic radii. The cation distribution and the temperature dependence of the lattice parameter (a) and the oxygen positional parameter (u) were obtained. A chemical formula close to Fe0.8Ni1.8Sb0.4O4 was determined, with Sb5+ cations occupying octahedral sites, and Fe3+ and Ni2+ occupying both tetrahedral and octahedral sites. Fe3+ mainly (85/15 ratio) occupy tetrahedral sites, and conversely Ni2+ mainly reside on octahedral ones. The magnetic unit cell is the same as the crystallographic one, having identical symmetry relations. The results indicate that the compounds have a collinear ferrimagnetic structure with antiferromagnetic coupling between the tetrahedral (A) and octahedral (B) sites. Uniquely, the temperature dependence of the net magnetization of this rare earth free ferrimagnet exhibits a compensation point.

Crystal structure↗
DOE OSTI2025

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-Doped Cadmium Telluride

In this study, we developed a new method for in situ Sb doping of CdTe thin films combining vapor transport deposition with a Group V pyrolyzer to address Sb doping concentration and doping efficiency. The Sb doped CdSeTe (CdSeTe:Sb) films were deposited in solar cell structures under variations of Sb dopant source heater, vapor pyrolyzer temperature, and Cd vapor excess. Results indicate that although these parameters do not affect the CdTe morphology or crystal structure, they critically influence doping efficiency and trap concentration. Capacitance-voltage measurements show that a higher dopant heater (TD) or pyrolyzer (TP) temperature leads to higher net carrier concentration, achieving a net carrier concentration of 1016 cm-3 and 20% doping efficiency with a TD/TP combination of 600 degrees C/1100 degrees C. By tuning the Cd/Sb flux ratio during CdSeTe:Sb deposition, the lowest defect concentration is achieved at Cd/Sb of 1.4:1, which produced the best VOC CdSeTe:Sb cell. This demonstrates a path to produce high net carrier concentration polycrystalline CdTe thin film with a low concentration of dopant-induced defects.

14 SOLAR ENERGY↗
DOE OSTI2013

Antimony leaching in plastics from waste electrical and electronic equipment (WEEE) with various acids and gamma irradiation

Highlights: • We have proposed a method to recover antimony from electronic plastics. • The most efficient acid solution was sodium hydrogen tartrate in dimethyl sulfoxide. • Gamma irradiation did not influence the antimony leaching ability. - Abstract: There has been a recent interest in antimony since the availability in readily mined areas is decreasing compared to the amounts used. It is important in many applications such as flame retardants and in the production of polyester, which can trigger an investigation of the leachability of antimony from plastics using different acids. In this paper, different types of acids are tested for their ability to leach antimony from a discarded computer housing, made of poly(acrylonitrile butadiene styrene), which is a common plastic type used in electrical and electronic equipment. The acid solutions included sodium hydrogen tartrate (0.5 M) dissolved in either dimethyl sulfoxide or water (at ca. 23 °C and heated to ca. 105 °C). The metal content after leaching was determined by inductively coupled plasma optical emission spectroscopy. The most efficient leaching medium was the heated solution of sodium hydrogen tartrate in dimethyl sulfoxide, which leached almost half of the antimony from the poly(acrylonitrile butadiene styrene). Gamma irradiation, which is proposed to improve the mechanical properties in plastics, was used here to investigate the influence of antimony leaching ability. No significant change in the amount of leached antimony could be observed.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2012

Antimony-Doped Tin(II) Sulfide Thin Films

Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements.(1) Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and nontoxic solar cells. SnS has always been observed to be a p-type semiconductor. Doping SnS to form an n-type semiconductor would permit the construction of solar cells with p-n homojunctions. In this paper, we report doping SnS films with antimony, a potential n-type dopant. Small amounts of antimony (~1%) were found to greatly increase the electrical resistance of the SnS. The resulting intrinsic SnS(Sb) films could be used for the insulating layer in a p-i-n design for solar cells. Higher concentrations (~5%) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Lastly, extended X-ray absorption fine structure analysis reveals that the highly doped films contain precipitates of a secondary phase that has chemical bonds characteristic of metallic antimony, rather than the antimony–sulfur bonds found in films with lower concentrations of antimony.

36 MATERIALS SCIENCE↗