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At least 1,765 records · Page 98
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Digital Optical Circuit Technology

The Proceedings for the 48th Meeting of the AGARD Avionics Panel contain the 18 papers presented a Technical Evaluation Report, and discussions that followed the presentations of papers. Seven papers were presented in the session devoted to optical bistability. Optical logic was addressed by three papers. The session on sources, modulators and demodulators presented three papers. Five papers were given in the final session on all optical systems. The purpose of this Specialists' Meeting was to present the research and development status of digital optical circuit technology and to examine its relevance in the broad context of digital processing, communication, radar, avionics and flight control systems implementation.

Dove, B. L.↗
NASA NTRS1984

Bipolar junction transistor models for circuit simulation of cosmic-ray-induced soft errors

This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.

Benumof, R.↗
NASA NTRS1985

Effect of recombination on the open-circuit voltage of a silicon solar cell

A theoretical study of the influence of band-band Auger, band-trap Auger, and the ordinary Shockley-Read-Hall mechanism for carrier recombination on the open-circuit voltage VOC of a solar cell is presented. Under reasonable assumptions for the magnitude of rate constants and realistic values for trap densities, surface recombination velocities and band-gap narrowing, the maximum VOC for typical back surface field solar cells is found to lie in the range between 0.61 and 0.72 V independent of base width.

Von Roos, O.↗
NASA NTRS1984

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

Weizer, V. G.↗
NASA NTRS1984

Test structures for propagation delay measurements on high-speed integrated circuits

The accuracy of high-speed wafer-level measurements on digital IC's is limited by the probe interface. This limitation strongly encourages the use of built-in on-chip test hardware to reduce the number of critical off-chip high-speed interfaces. A novel synchronous propagation delay test structure is described which will provide accurate parametric data under typical automatic test conditions. Built-in test features added to complex combinational circuits are shown which are useful for delay measurement and which reduce the total number of high-speed I/O connections while still providing acceptable fault coverage in many cases.

Long, S. I.↗
NASA NTRS1986

Guidelines for SEU-Resistant Integrated Circuits

Paper presents recent results of continuing program for increasing resistance of integrated circuits to single-event upset (SEU). Results based on study of test data for heavy-ion SEU in more than 180 different types of devices. (Some devices perform identical functions but made by different processes.) Program also examines developments in mathematical models for SEU.

Nichols, D. K.↗
NASA NTRS1985

Further research on high open circuit voltage in silicon solar cells

The results of a new research on the use of controlled dopant profiles and oxide passivation to achieve high open circuit voltage V sub oc in silicon solar cells is presented. Ion implantation has been used to obtain nearly optimal values of surface dopant concentration. The concentrations are selected so as to minimize heavy doping effects and thereby provide both high blue response and high V sub oc ion implantation technique has been successfully applied to fabrication of both n-type and p-type emitters. V sub oc of up to 660 mV is reported and AMO efficiency of 16.1% has been obtained.

Spitzer, M. B.↗
NASA NTRS1986

Optically controlled phased array antenna concepts using GaAs monolithic microwave integrated circuits

The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.

Kunath, R. R.↗
NASA NTRS1986

Finite element modelling of non-linear magnetic circuits using Cosmic NASTRAN

The general purpose Finite Element Program COSMIC NASTRAN currently has the ability to model magnetic circuits with constant permeablilities. An approach was developed which, through small modifications to the program, allows modelling of non-linear magnetic devices including soft magnetic materials, permanent magnets and coils. Use of the NASTRAN code resulted in output which can be used for subsequent mechanical analysis using a variation of the same computer model. Test problems were found to produce theoretically verifiable results.

Sheerer, T. J.↗
NASA NTRS1985

MOS integrated circuit fault modeling

Three digital simulation techniques for MOS integrated circuit faults were examined. These techniques embody a hierarchy of complexity bracketing the range of simulation levels. The digital approaches are: transistor-level, connector-switch-attenuator level, and gate level. The advantages and disadvantages are discussed. Failure characteristics are also described.

Sievers, M.↗
NASA NTRS1985

The effect of a defective BSF layer on solar cell open circuit voltage

A straightforward analysis of special limiting cases has permitted the determination of the range of possible open circuit voltage losses due to a defective BSF (back surface field) layer. An important result of the analysis is the finding that it is possible to have a fully effective BSF region, regardless of the spatial distribution of the defective areas, as long as the total defective area is reduced below certain limits. Distributed defects were found to be much more harmful than lumped defects.

Weizer, V. G.↗
NASA NTRS1985

Circuit analysis method for thin-film solar cell modules

The design of a thin-film solar cell module is dependent on the probability of occurrence of pinhole shunt defects. Using known or assumed defect density data, dichotomous population statistics can be used to calculate the number of defects expected in a module. Probability theory is then used to assign the defective cells to individual strings in a selected series-parallel circuit design. Iterative numerical calculation is used to calcuate I-V curves using cell test values or assumed defective cell values as inputs. Good and shunted cell I-V curves are added to determine the module output power and I-V curve. Different levels of shunt resistance can be selected to model different defect levels.

Burger, D. R.↗
NASA NTRS1987

Gain-Compensating Circuit For NDE and Ultrasonics

High-frequency gain-compensating circuit designed for general use in nondestructive evaluation and ultrasonic measurements. Controls gain of ultrasonic receiver as function of time to aid in measuring attenuation of samples with high losses; for example, human skin and graphite/epoxy composites. Features high signal-to-noise ratio, large signal bandwidth and large dynamic range. Control bandwidth of 5 MHz ensures accuracy of control signal. Currently being used for retrieval of more information from ultrasonic signals sent through composite materials that have high losses, and to measure skin-burn depth in humans.

Kushnick, Peter W.↗
NASA NTRS1987

Switching Circuit Regulates Solenoid Current

New circuit requires no heat sink and is compact. Parts cost no more than those of linear regulator. Switching regulator repeatedly causes solenoid current to build up to maximum level, then to decay to minimum level: thus current ripples about commanded intermediate level. FET's dissipate significant amounts of power only during brief turn-on and turn-off intervals.

Simon, Richard A.↗
NASA NTRS1987

Temperature-Controlling Circuit

Simple circuit switches current to electrical heater on and off to maintain temperature of room at 25 plus or minus 0.5 degree C. Lightweight, compact, reliable, insensitive to electrical noise, and uses single 5-Vdc power supply. Handles ac loads of 10 A. Designed to operate outside temperature controlled environment over range of -55 to +85 degree C. Thermistor provides input signal for simple temperature controller. Output of controller applied to solid-state relay, which in turn switches current to resistance heater.

Temple, Gerald↗
NASA NTRS1987

Anomalous transport in discrete arcs and simulation of double layers in a model auroral circuit

The evolution and long-time stability of a double layer (DL) in a discrete auroral arc requires that the parallel current in the arc, which may be considered uniform at the source, be diverted within the arc to charge the flanks of the U-shaped double layer potential structure. A simple model is presented in which this current redistribution is effected by anomalous transport based on electrostatic lower hybrid waves driven by the flank structure itself. This process provides the limiting constraint on the double layer potential. The flank charging may be represented as that of a nonlinear transmission line. A simplified model circuit, in which the transmission line is represented by a nonlinear impedance in parallel with a variable resistor, is incorporated in a one-dimensional simulation model to give the current density at the DL boundaries. Results are presented for the scaling of the DL potential as a function of the width of the arc and the saturation efficiency of the lower hybrid instability mechanism.

Smith, Robert A.↗
NASA NTRS1987

Optically controlled microwave devices and circuits: Emerging applications in space communications systems

Optical control of microwave devices and circuits by an optical fiber has the potential to simplify signal distribution networks in high frequency communications systems. The optical response of two terminal and three terminal (GaAs MESFET, HEMT, PBT) microwave devices are compared and several schemes for controlling such devices by modulated optical signals examined. Monolithic integration of optical and microwave functions on a single semiconductor substrate is considered to provide low power, low loss, and reliable digital and analog optical links for signal distribution.

Bhasin, Kul B.↗