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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,261 records · Page 70
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Development of a new low cost antireflective coating technique for solar cells

The goal of this study was the development of an antireflective (AR) coating technique that has the potential for high throughput and low cost yet is capable of producing films of good optical quality. Previous efforts to develop sprayed AR coatings had utilized titanium isopropoxide mixed with volatile solvents. These films worked well on smooth surfaces but when applied to etched semi-crystalline silicon surfaces yielded inconsistent results with more than 20 percent of the AM1 incident light being reflected. In this program titanium isopropoxide was sprayed directly onto heater wafers (410 C) to produce a uniform AR coating even on highly textured surfaces. Tests on various types of solar cells yielded performance improvements for the hot sprayed AR cells that are equivalent to that observed for evaporated TiOx AR coated cells. As an extension of this effort a new double layer AR consisting of a bottom layer of hot sprayed titanium isopropoxide and a top layer of hot sprayed aluminum isopropoxide in methylene chloride has resulted in more than 10 percent improvement in cell output as compared to a single layer AR cell.

Wohlgemuth, J. H.↗
NASA NTRS1983

Sheet silicon cell/module technology

The cost involved in the performance of the standard operations for the manufacture of silicon wafers is insignificant in the case of space photovoltaics applications. It is, however, a decisive factor with respect to terrestrial applications of silicon photovoltaic devices. In 1975, a program was, therefore, begun to develop low cost silicon solar arrays for terrestrial applications. The goal was silicon-based photovoltaic (PV) modules ready for installation at a selling price of $0.50/watt (1975 dollars). Sheet and ribbon silicon growth held out the promise of reduced cost through continuous operation, high material throughput, high material utilization efficiency, and a product whose shape lent itself to the assembly of high packing density modules. Attention is given to ribbon growth technologies, sheet technology generic problems, and ribbon cell and module technology status. It is concluded that the potential for crystalline ribbon silicon appears to be better today than ever before.

Morrison, A. D.↗
NASA NTRS1983

Pinhole array capacitor for oxide integrity analysis

The integrity of the metal-poly oxide and the gate oxide was evaluated for several 5-micron CMOS-bulk processes. The pinhole array capacitor consists of diffused and poly fingers that form a network of MOS transistors (elements), which are capped by a deposited oxide and metal layer. The smallest structure used in this study contained about 15,000 elements and the largest structure contained about 68,000 elements. Each structure was divided into several subarrays. The structures are placed a number of times on each wafer. From a yield analysis of the subarrays, the elements per defect were found to be typically in excess of 50,000 elements/defect for the metal-poly oxide and 100,000 elements/defect for the gate oxide. From the switching behavior of the transistors, the gate oxide defects were tentatively identified as gate-to-body shorts rather than gate-to-diffusion shorts.

Buehler, M. G.↗
NASA NTRS1985

Designing Test Chips for Custom Integrated Circuits

Collection of design and testing procedures partly automates development of built-in test chips for CMOS integrated circuits. Testchip methodology intended especially for users of custom integratedcircuit wafers. Test-Chip Designs and Testing Procedures (including datareduction procedures) generated automatically by computer from programed design and testing rules and from information supplied by user.

Buehler, M. G.↗
NASA NTRS1984

Ingot slicing machine and method

An improved method for simultaneously slicing one or a multiplicity of boules of silicon into silicon wafers is described. A plurality of vertical stacks of horizontal saw blades of circular configuration are arranged in juxtaposed coaxial alignment. Each blade is characterized by having a cutting diameter slightly greater than the cutting diameter of the blade arranged immediately above, imparting a simultaneous rotation to the blades.

Kuo, Y. S.↗
NASA NTRS1985

Characterization of material surfaces exposed to atomic oxygen on space shuttle missions

Material samples prepared for exposure to ambient atomic oxygen encountered during space shuttle flights in low Earth orbit were characterized by the experimental techniques of ELLIPSOMETRY, ESCA, PIXE, and RBS. The first group of samples, which were exposed during the STS-8 mission, exhibited some very interesting results. The second group of samples, which are to be exposed during the upcoming STS-17 mission, have been especially prepared to yield quantitative information on the optical changes, oxygen solution, and surface layer formation on metal films of silver, gold, nickel, chromium, aluminum, platinum, and palladium evaporated onto optically polished silicon wafers.

Fromhold, A. T.↗
NASA NTRS1985

Pulsed Excimer Laser Processing for Cost-Effective Solar Cells

Residual lattice damage by 5 keV ion implantation and surface flaws induced by wafer cleaning are proven to affect the V sub oc more adversely for laser annealed cells than conventional thermal diffusion. However, an alternative, molecular implantation of molecular species holds potential. The first experimental results are encouraging. The lack of a commercially available mass analyzed implantation with low energy, high fluence ions is constraining.

Wong, D.↗
NASA NTRS1985

Gas chromatography: Possible application of advanced instrumentation developed for solar system exploration to space station cabin atmospheres

Gas chromatography (GC) technology was developed for flight experiments in solar system exploration. The GC is a powerful analytical technique with simple devices separating individual components from complex mixtures to make very sensitive quantitative and qualitative measurements. It monitors samples containing mixtures of fixed gases and volatile organic molecules. The GC was used on the Viking mission in support of life detection experiments and on the Pioneer Venus Large Probe to determine the composition of the venusian atmosphere. A flight GC is under development to study the progress and extent of STS astronaut denitrogenation prior to extravehicular activity. Advanced flight GC concepts and systems for future solar system exploration are also studied. Studies include miniature ionization detectors and associated control systems capable of detecting from ppb up to 100% concentration levels. Further miniaturization is investigated using photolithography and controlled chemical etching in silicon wafers. Novel concepts such as ion mobility drift spectroscopy and multiplex gas chromatography are also developed for future flight experiments. These powerful analytical concepts and associated hardware are ideal for the monitoring of cabin atmospheres containing potentially dangerous volatile compounds.

Carle, G. C.↗
NASA NTRS1985

Oxygen and carbon impurities and related defects in silicon

Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

Pearce, C. W.↗
NASA NTRS1985

Electrical and Structural Characterization of Web Dendrite Crystals

Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependency on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs.

Schwuttke, G. H.↗
NASA NTRS1984

Interfacial bonding stability

Interfacial bonding stability by in situ ellipsometry was investigated. It is found that: (1) gamma MPS is an effective primer for bonding ethylene vinyl acetate (EVA) to aluminum; (2) ellipsometry is an effective in situ technique for monitoring the stability of polymer/metal interfaces; (3) the aluminized back surface of silicon wafers contain significant amounts of silicon and may have glass like properties.

Boerio, J.↗
NASA NTRS1984

Advanced module development overview

Crystalline silicon solar power modules are examined for reliability and cost effectiveness. A goal of 12% solar energy conversion efficiency is considered feasible at a cost of 12/kWh, and a decision is made to limit consideration to float zone silicon wafer and dendritic web silicone modules. A preliminary module packaging configuration of glass/ethylene vinyl acetate/plastic film is selected. Anticipated module efficiency levels are 12.6% at 25 C and 11.5% at NOCT (Nominal Operating Cell Temperature).

Smokler, M. I.↗
NASA NTRS1985

Diamondlike carbon protective coatings for IR materials

Diamondlike carbon (DLC) films have the potential to protect optical windows in applications where it is important to maintain the integrity of the specular transmittance of these films on ZnS and ZnSe infrared transmitting windows. The films must be adherent and durable such that they protect the windows from rain and particle erosion as well as chemical attack. In order to optimize the performance of these films, 0.1 micro m thick diamondlike carbon films were deposited on fused silica and silicon wafers, using three different methods of ion beam deposition. One method was sputter deposition from a carbon target using an 8 cm ion source. The merits of hydrogen addition were experimentally evaluated in conjunction with this method. The second method used a 30 cm hollow cathode ion source with hydrocarbon/Argon gases to deposit diamondlike carbon films from the primary beam at 90 to 250 eV. The third method used a dual beam system employing a hydrocarbon/Argon 30 cm ion source and an 8 cm ion source. Films were evaluated for adherence, intrinsic stress, infrared transmittance between 2.5 and 50 micro m, and protection from particle erosion. An erosion test using a sandblaster was used to give quantitative values of the protection afforded to the fused silica by the diamondlike carbon films. The fused silica surfaces protected by diamondlike carbon films were exposed to 100 micro m diameter SiO particles at 60 mi/hr (26.8/sec) in the sandblaster.

Mirtich, M. J.↗
NASA NTRS1986

Advanced detectors and signal processing

Continued progress is reported toward development of a silicon on garnet technology which would allow fabrication of advanced detection and signal processing circuits on bubble memories. The first integrated detectors and propagation patterns have been designed and incorporated on a new mask set. In addition, annealing studies on spacer layers are performed. Based on those studies, a new double layer spacer is proposed which should reduce contamination of the silicon originating in the substrate. Finally, the magnetic sensitivity of uncontaminated detectors from the last lot of wafers is measured. The measured sensitivity is lower than anticipated but still higher than present magnetoresistive detectors.

Greve, D. W.↗
NASA NTRS1983

Monolithic lead salt-silicon focal plane development

This paper is a summary of work done in the development of monolithic lead salt-silicon infrared focal plane technology. The photoconductive detector materials, PbS and PbSe are chemically deposited onto premetallized silicon MOSFET integrated circuit wafers. A variety of structures based on an implanted PMOS process were fabricated and evaluated. Operational results of an eight-element PbS array multiplexed on-chip are presented along with radiometric measurements on other integrated PbS-silicon MOSFET structures. PbS imagery is shown using one element of a 20-element array integrated on-chip.

Barrett, J. R.↗
NASA NTRS1984

Backside damage-gettering in cast polycrystalline silicon

The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.

Culik, J.↗
NASA NTRS1985

Far-infrared transmittance of boron-implanted germanium at liquid-helium temperatures

The transmission of far-infrared radiation of 100-microns-wavelength through Ge wafers ion implanted with B was measured at a temperature of approximately 4 K. Transmittance ranged from approximately 0.5 to 0.08 for doses from 3 x 10 to the 12th to 3 x 10 to the 15th/sq cm. The resistivity at temperatures between 4 and 1 K, and the impurity profiles of the implanted layers were also measured and correlated with the infrared transmittance.

Hadek, V.↗