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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Etchant containing chloroplatinous or chloroplatinic acid greatly reduces contact resistance between metallic surfaces. Etching results in a monolayer plating of platinum on the wafer surface, preventing oxide growth.
High temperature capacitor consisting of thin wafers of pyrolytic boron nitride noting fabrication, dissipation factor and capacitance
Sample is doped by constructing a sandwich of five slices of silicon with lithium dopant deposited on the outside surfaces of the second and fourth slices and placing the sample in the middle. Upon heating, the lithium diffuses through the carrier slices and into the sample wafer.
Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces.
Planar array processing of indium arsenide wafers includes dicing into a prescribed geometry, then cleaning and drying, and finally pre-oxidizing in an oxygen atmosphere at 500 degrees C. The last step forms an oxide interface between the InAs surface and a glow discharge deposited layer of silicon dioxide.
Future generation computer utilizes cell of single metal oxide semiconductor wafer containing general purpose processor section and small memory of approximately 512 words of 16 bits each. Cells are organized into groups and groups interconnected to form computer.
Diamond scribing methods of separating semiconductor devices on silicon wafers
Screening measurements and fabrication of metal oxide semiconductor and multilayer-bipolar wafers
Contamination in furnaces for fabricating wafers, and cleaning procedures
Carrier concentration profiles and surface resistance of Ohmic contacts to solution epitaxial n-type GaAs wafers measured by Schottky barrier capacitance
Electrical conduction and surface properties of beta-SiC films obtained by heating Si wafer in presence of hydrocarbon
Large scale integration microelectronic wafer and package testing including parametric and functional tests of combinatorial and sequential logic circuits
Degradation of Ti/Ag contacts in Si solar cells, and deposition of Ti/Ag contacts on Si wafers
Instructions for use of anodic oxidation apparatus in conjunction with computer program to obtain electrically active concentration profiles of doped silicon wafers
Construction of improved phototransistors to provide increased base-collector capacitance is described. Silicon or germanium semiconductor wafers are used as examples. Operation of transistors and electrical properties are discussed and illustrations of the devices are included.
Fabrication of a miniature gas chromatograph column using integrated circuit technology was studied and found to be feasible. A bonding problem of forming a strong, gas tight seal between two wafers of silicon has prevented the completion of the column design. Continuing research using tin or a chromium-gold bond promises to overcome the problems of using the proposed gold-eutectic bond. Specifications for the miniature gas chromatograph column are: a spiral capillary column of semi-circular cross section, 30 micron radius, and a total length of 6.9 meters etched into a silicon structure 50 mm in diameter and 0.625 mm thick.
It was found that mechanical bending of CdS wafers with the (00.1) orientation causes pronounced changes in the contact potential difference. The changes were of the order of one volt. This effect was attributed to the polarization induced in the depletion layer by the mechanical stress. On this basis a model was developed which accounts for the experimental results.
Van der Pauw or bridge samples are ultrasonically cut from silicon on sapphire wafers. Contact pad regions are implanted with moderately heavy dose of ions. Ion of interest is implanted into sample; and, before being annealed in vacuum, sample is sealed with sputtered layer of silicon dioxide. Nickel or aluminum is sputtered onto contact pad areas and is sintered in nitrogen atmosphere.