NASA NTRS ยท 19700000142
Diffusion technique for lithium-doped silicon
Abstract
Sample is doped by constructing a sandwich of five slices of silicon with lithium dopant deposited on the outside surfaces of the second and fourth slices and placing the sample in the middle. Upon heating, the lithium diffuses through the carrier slices and into the sample wafer.
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Kendall, D. L.. 1970-06-01. Diffusion technique for lithium-doped silicon. https://ntrs.nasa.gov/citations/19700000142
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