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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Analyzing a steady-state phenomenon using an ensemble of sequential transient events: A proof of concept on photocurrent of bacteriorhodopsin upon continuous photoexcitation

The proton pump activity of bacteriorhodopsin in aqueous solution upon excitation with modulated continuous light was monitored electrochemically and analyzed by superimposing a series of transient proton translocation events Hᵢ⁺(t). An evolution function f(t)=(he{sup –lt}+k)/(h+k) , including a decay and a stationary offset, was introduced to weight the contribution of the individual transient events evolving with time in the envelope of the steady-state event. The evolution of the total proton concentration can be treated as an ensemble of weighted sequential transient events, H{sub total}⁺(t)=Σ{{sub i=0}sup n}Hᵢ⁺(t)∙f(t), and the temporal profile of the photocurrent is derived by differentiating the proton concentration with respect to time, (table) . The temporal profiles of the bacteriorhodopsin photocurrent in pH range of 6.3–8.1 were analyzed using a well-defined kinetics model and restricted mathematical formulization, and fitted temporal behaviors agreed with the observations. This successful proof-of-concept study on analyzing a steady-state phenomenon using an ensemble of sequential transient events can be generalized to quantify other phenomena upon continuous stimulation, such as estimation of the light-driven ion pump activities of the photosynthetic proteins upon illumination.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Optical-phonon-mediated photocurrent in terahertz quantum-well photodetectors

Strong and sharp photocurrent peak at longitudinal optical (LO) phonon frequency (8.87 THz) is found in GaAs/(Al,Ga)As terahertz quantum-well photodetectors (QWPs). Two mesa-structure terahertz QWPs with and without one-dimensional metal grating are fabricated to investigate the behavior of such photoresponse peak. The experimental and simulation results indicate that the photocurrent peak originates from a two-step process. First, at the LO phonon frequency, a large number of non-equilibrium LO phonons are excited by the incident electromagnetic field, and the electromagnetic energy is localized and enhanced in the thin multi-quantum-well layer. Second, through the Frohlich interaction, the localized electrons are excited to continuum states by absorbing the non-equilibrium LO phonons, which leads to the strong photoresponse peak. This finding is useful for exploring strong light-matter interaction and realizing high sensitive terahertz photodetectors.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Opto-mechano-electrical tripling in ZnO nanowires probed by photocurrent spectroscopy in a high-resolution transmission electron microscope

Photocurrent spectroscopy of individual free-standing ZnO nanowires inside a high-resolution transmission electron microscope (TEM) is reported. By using specially designed optical in situ TEM system capable of scanning tunneling microscopy probing paired with light illumination, opto-mechano-electrical tripling phenomenon in ZnO nanowires is demonstrated. Splitting of photocurrent spectra at around 3.3 eV under in situ TEM bending of ZnO nanowires directly corresponds to nanowire deformation and appearance of expanded and compressed nanowire sides. Theoretical simulation of a bent ZnO nanowire has an excellent agreement with the experimental data. The splitting effect could be explained by a change in the valence band structure of ZnO nanowires due to a lattice strain. The strain-induced splitting provides important clues for future flexible piezo-phototronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Anisotropic band structure of TiS 3 nanoribbon revealed by polarized photocurrent spectroscopy

A re-discovered member of the layered material family, Titanium Trisulfide (TiS 3 ), has attracted intense research interest recently for the possibility of realizing an exciton insulator in the monolayer limit. However, due to their quasi-one-dimensional nature, thin TiS 3 flakes are typically in the form of nanoribbons that are challenging to characterize by optical absorption spectra, due to their small cross section. Here, we employ a sensitive photocurrent spectroscopy technique to probe the absorption of a thin TiS 3 nanoribbon in a field-effect transistor configuration. We have found a significant modification of the band structure of the thin TiS 3 nanoribbon, compared to its bulk counterpart. In addition, the polarization-dependent photocurrent spectra of thin TiS 3 nanoribbons exhibit greatly enhanced anisotropy compared to that of a thick TiS 3 device. The atomically thin TiS 3 flake, thus, not only provides an exciting platform for investigating many-body physics but also enables anisotropic quantum optoelectronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Excitation energy-dependent photocurrent switching in a single-molecule photodiode

The direction of electron flow in molecular optoelectronic devices is dictated by charge transfer between a molecular excited state and an underlying conductor or semiconductor. For those devices, controlling the direction and reversibility of electron flow is a major challenge. We describe here a single-molecule photodiode. It is based on an internally conjugated, bichromophoric dyad with chemically linked (porphyrinato)zinc(II) and bis(terpyridyl)ruthenium(II) groups. On nanocrystalline, degenerately doped indium tin oxide electrodes, the dyad exhibits distinct frequency-dependent, charge-transfer characters. Variations in the light source between red-light (∼1.9 eV) and blue-light (∼2.7 eV) excitation for the integrated photodiode result in switching of photocurrents between cathodic and anodic. The origin of the excitation frequency-dependent photocurrents lies in the electronic structure of the chromophore excited states, as shown by the results of theoretical calculations, laser flash photolysis, and steady-state spectrophotometric measurements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Polarization-dependent photocurrents in polar stacks of van der Waals solids

Monolayers of semiconducting van der Waals solids, such as transition metal dichalcogenides, acquire significant electric polarization normal to the layers when placed on a substrate or in a heterogeneous stack. This causes a linear coupling of electrons to electric fields normal to the layers. Irradiation at oblique incidence at frequencies above the gap causes interband transitions due to coupling to both normal and in-plane ac electric fields. The interference between the two processes leads to sizable in-plane photocurrents and valley currents. The direction and magnitude of the currents are controlled by light polarization and are determined by their helical or nonhelical components. The helicity-dependent ballistic current arises due to asymmetric photogeneration. The nonhelical current has a ballistic contribution (dominant in sufficiently clean samples) caused by asymmetric scattering of photoexcited carriers, and a side-jump contribution. Here, a magneto-induced photocurrent is due to the Lorentz force or due to an intrinsic magnetic moment related to Berry curvature.

Lyanda-Geller, Y. B.↗
DOE OSTI2017

Photocurrents in Weyl semimetals

The generation of photocurrent in an ideal two-dimensional Dirac spectrum is symmetry forbidden. In sharp contrast, we show that three-dimensional Weyl semimetals can generically support significant photocurrents due to the combination of inversion symmetry breaking and finite tilts of the Weyl spectra. Symmetry properties, chirality relations, and various dependencies of this photovoltaic effect on the system and the light source are explored in detail. Overall, our results suggest that noncentrosymmetric Weyl materials can be advantageously applied to room temperature detections of mid- and far-infrared radiations.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Quantitative relationship between polarization differences and the zone-averaged shift photocurrent

A relationship is derived between differences in electric polarization between bands and the “shift vector” that controls part of a material's bulk photocurrent, then demonstrated in several models. Electric polarization has a quantized gauge ambiguity and is normally observed at surfaces via the surface charge density, while shift current is a bulk property and is described by shift vector gauge invariant at each point in momentum space. They are connected because the same optical transitions that are described in shift currents pick out a relative gauge between valence and conduction bands. We also discuss subtleties arising when there are points at the Brillouin zone where optical transitions are absent. Finally, we conclude that two-dimensional materials with significant interband polarization differences should have high bulk photocurrent, meaning that the modern theory of polarization can be used as a straightforward way to search for bulk photovoltaic material candidates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Chiral magnetic photocurrent in Dirac and Weyl materials

Circularly polarized light (CPL) can induce an asymmetry between the number of left- and right-handed chiral quasiparticles in Dirac and Weyl semimetals. Here, we show that if the photoresponse of the material is dominated by chiral quasiparticles, the total chiral charge induced in the material by CPL can be evaluated in a model-independent way through the chiral anomaly. In the presence of an external magnetic field perpendicular to the incident CPL, this allows us to predict the linear density of the induced photocurrent resulting from the chiral magnetic effect. The predicted effect should exist in any kind of Dirac or Weyl materials, with both symmetric and asymmetric band structure. An estimate of the resulting chiral magnetic photocurrent in a typical Dirac semimetal irradiated by an infrared laser of intensity ≃5×10 6 W/m 2 and a wavelength of λ≃10μm in an external magnetic field B≃2T yields a current J≃50nA in the laser spot of size ≃50μm. Here, this current scales linearly with the magnetic field and wavelength, opening up possibilities for applications in photonics, optoelectronics, and THz sensing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Zeeman-Induced Valley-Sensitive Photocurrent in Monolayer MoS 2

The control of the valley degree of freedom lies at the core of interest in monolayer transition metal dichalcogenides, where specific valley-spin excitation can be created using circularly polarized light. Measurement and manipulation of the valley index has also been achieved, but mainly with purely optical methods. Here, in monolayer MoS 2 , we identify a response to the valley polarization of excitons in the longitudinal electrical transport when the valley degeneracy is broken by an out-of-plane magnetic field B z . The spin information is also simultaneously determined with spin-sensitive contacts. In the presence of B z , a significant modulation of the photocurrent is observed as a function of the circular polarization state of the excitation. We attribute this effect to unbalanced transport of valley-polarized trions induced by the opposite Zeeman shifts of two ( K and K' ) valleys. Furthermore, our interpretation is supported by the contrasting behavior in bilayer MoS 2 , as well as the observed doping and spatial dependence of the valley photocurrent.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Interactions Remove the Quantization of the Chiral Photocurrent at Weyl Points

The chiral photocurrent or circular photogalvanic effect (CPGE) is a photocurrent that depends on the sense of circular polarization. In a disorder-free, non-interacting chiral Weyl semimetal, the magnitude of the effect is approximately quantized with a material-independent quantum $e^3/h^2$ for reasons of band topology. We study the first-order corrections due to the Coulomb and Hubbard interactions in a continuum model of a Weyl semimetal in which known corrections from other bands are absent. We find that the inclusion of interactions generically breaks the quantization. The corrections have a weaker dependence on the form of the cutoff than previously studied interaction corrections to the (non-topological) linear optical conductivity of graphene, and a potentially observable frequency dependence. Here, we conclude that, unlike the quantum Hall effect in gapped phases or the chiral anomaly in field theories, the quantization of the CPGE in Weyl semimetals is not protected but has perturbative corrections in interaction strength.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Modeling of photocurrent and lag signals in amorphous selenium x-ray detectors

A mathematical model for transient photocurrent and lag signal in x-ray imaging detectors has been developed by considering charge carrier trapping and detrapping in the energy distributed defect states under exponentially distributed carrier generation across the photoconductor. The model for the transient and steady-state carrier distributions and hence the photocurrent has been developed by solving the carrier continuity equation for both holes and electrons. The residual (commonly known as lag signal) current is modeled by solving the trapping rate equations considering the thermal release and trap filling effects. The model is applied to amorphous selenium (a-Se) detectors for both chest radiography and mammography. The authors analyze the dependence of the residual current on various factors, such as x-ray exposure, applied electric field, and temperature. The electron trapping and detrapping mostly determines the residual current in a-Se detectors. The lag signal is more prominent in chest radiographic detector than in mammographic detectors. The model calculations are compared with the published experimental data and show a very good agreement.

42 ENGINEERING↗
DOE OSTI2012

Generation of terahertz radiation by a surface ballistic photocurrent in semiconductors under subpicosecond laser excitation

An analytical model describing the onset of a surface ballistic photocurrent in cubic semiconductors under femtosecond laser excitation is proposed. It is shown that the contribution of the photocurrent component parallel to the surface to the generation of terahertz pulses may be comparable to the contribution of the perpendicular component. Consideration of the cubic symmetry of a semiconductor leads to the azimuthal anisotropy of terahertz generation.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Photocurrent in a quantum channel with an impurity

The influence of electromagnetic radiation on electron transport in a quantum channel with a single short-range impurity is studied using the generalization of the Landauer-Buettiker method. It is shown that a direct photocurrent is induced in the system in the case of asymmetric impurity location. The dependence of the photocurrent on the electron chemical potential, impurity location, and radiation frequency is studied.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Simultaneous holographic and photocurrent studies of the photorefractive effect in LiTaO3 and LiNbO3

In reduced LiNbO3:Mn both the photorefractive sensitivity and the simultaneously measured photocurrent result from drift with a polarization-dependent effective 'internal field' of about 6 kV/cm. In reduced undoped LiTaO3 the observed difference in applied fields of the minimum photorefractive sensitivity and zero photocurrent imply charge transport is by a mechanism that cannot be completely described by diffusion and drift in an electric field. The direct measurement of the harmonic content of phase gratings written in several LiNbO3 and LiTaO3 crystals shows termination of charge-transport results from the space-charge field of the hologram.

Spinhirne, J. M.↗
NASA NTRS1986

Photocurrent Imaging Detects Solar-Module Defects

Raster-scanned laser beam excites photocurrents in thin-film amorphous silicon devices. Solar-cell laser scanner uses two galvanometer-driven mirrors to scan laser-beam spot over surface of module or cell under test. Position signals from scan controllers used to index storage of photocurrent signal data in scan-converter image memory. Stored image displayed on television monitor.

Kim, Q.↗
NASA NTRS1990

Intersubband infrared absorption in Ge(x)Si(1-x)/Si superlattice by photocurrent measurement

The intersubband IR absorption of holes in a Ge(x)Si(1-x)/Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a function of bias across the device are observed due to intersubband absorption between the ground to the first and the first of the second light hole minibands. The polarization dependence measurement is used to study the nature of the transitions and is in good agreement with the selection rules.

Karunasiri, R. P. G.↗