SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Single-crystal sheets pulled from polten silicon floating on refractory melt require no slicing or polishing. Possible materials are chlorides and fluorides of barium, calcium, and strontium. Refractory melt may be able to absorb impurities from silicon and thus obviate postgrowth purification.
Method utilizing a modified hand operated centrifuge is used to deaerate high velocity (6,000 poise) silicon rubber for economical production of void-free silicon rubber seals.
The reaction of silicon powder and nitrogen was studied in the range of 1300-1400 C. When an addition of Fe2O3 was more than 0.8wt%, the reaction was linear and compared to samples with no Fe2O3, the reaction velocity increased 5 to 10 times. The reactions were mediated by the process of peeling and cracking in a thin layer of Si2N4 formed on the silicon particles or on the surface of the Fe-Si melts. As the addition of Fe2O3 increased, the reaction activation energy for highly pure samples decreased. Fe2O3 which exceeded the Si3N4 solubility limits was finally converted to d-Fe.
The status of radiation defects in silicon is briefly reviewed and discussed in relation to the problem of radiation tolerance of silicon solar cells in space.
A development program was performed for evaluating, modifying, and optimizing the Lockheed formulated liquid transparent filmforming Spraylon fluorocarbon protective coating for silicon solar cells and modules. The program objectives were designed to meet the requirements of the low-cost automated solar cell array fabrication process. As part of the study, a computer program was used to establish the limits of the safe working stress in the coated silicon solar cell array system under severe thermal shock.
The production of low cost, efficient solar cells for terrestrial electric power generation involves the manipulation of molten silicon with a present need for noncontaminating, high temperature refractories to be used as containment vessels, ribbon-production dies, and dip-coated substrates. Studies were conducted on the wetting behavior and chemical/physical interactions between molten silicon and various refractory materials.
The object of phase 2 of this program is to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort this quarter was in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo, and C and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The performance of solar cells fabricated on silicon web crystals grown from melts containing about 10 to the 18th power/cu cm of Cr, Mn, Fe, Ni, Ti, and V, respectively were measured. Deep level spectroscopy of metal-contaminated ingots was employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.
The conversion of metallurgical grade silicon into semiconductor grade silicon by way of a three step SiF2 polymer transport purification process was investigated. Developments in the following areas were also examined: (1) spectroscopic analysis and characterization of (SiF2) sub x polymer and Si sub x F sub y homologue conversion; (2) demonstration runs on the near continuous apparatus; (3) economic analysis; and (4) elemental analysis.
The feasibility of using a non-equilibrium hydrogen plasma jet as a chemical synthesis tool was investigated. Four possible processes were identified for further study: (1) production of polycrystalline silicon photovoltaic surfaces, (2) production of SiHCl3 from SiCl4, (3) production of SiH4 from SiHCl3, and (4) purification of SiCl4 by metal impurity nucleation. The most striking result was the recognition that the strongly adhering silicon films, amorphous or polycrystalline, produced in our studies could be the basis for preparing a photovoltaic surface directly; this process has potential advantages over other vapor deposition processes.
The development of a Czochralski furnace that permits the growing of silicon crystals with a continuous liquid replenishment of the molten silicon of the growth crucible is described.
Sliding friction experiments were conducted with spherical, single-crystal silicon carbide riders in contact with various metals and with metal riders in contact with silicon carbide flats. Results indicate that: (1) the friction force in the plowing of metal and (2) the groove height (corresponding to the volume of the groove) are related to the shear strength of the metal. That is, they decrease linearly as the shear strength of the bulk metal increases. Grooves are formed in metals primarily from plastic deformation, with occasional metal removal. The relation between the groove width D and the load W can be expressed by W = kD, superscript n which satisfies Meyer's law.
Supercooling of silicon-tin alloy melts was studied. Values as high as 78 C at 1100 C and 39 C at 1200 C were observed, corresponding to supersaturation parameter values 0.025 and 0.053 at 1050 C and 1150 C, respectively. The interaction of tin with silane gas streams was investigated over the temperature range 1000 to 1200 C. Single-pass conversion efficiencies exceeding 30% were obtained. The growth habit of spontaneously-nucleated surface growth was determined to be consistent with dendritic and web growth from singly-twinned triangular nucleii. Surface growth of interlocking silicon crystals, thin enough to follow the surface of the liquid and with growth velocity as high as 5 mm/min, was obtained. Large area single-crystal growth along the melt surface was not achieved. Small single-crystal surface growth was obtained which did not propagate beyond a few millimeters.
This paper presents the results of continued studies of silicon solar cell operation and limitations. The objective of this paper is to report on geometrical and doping changes in silicon solar cells which result in predictions of high efficiencies. Efficiencies as high as 20 per cent (uncorrected for metal coverage and ohmic sheet resistance) have been calculated for optimized cells. The conditions required to achieve these efficiency values are discussed.
The article discusses the production of solar cells from high-purity silicon. The process consists of reducing the level of impurities in the raw materials, preventing material contamination before and after entering the furnace, and performing orders-of-magnitude reduction of metal impurity concentrations. The high-purity raw materials are considered with reference to carbon reductants, silica, and graphite electrodes. Attention is also given to smelting experiments used to demonstrate, in an experimental-scale furnace, the production of high-purity SoG-Si. It is found that high-purity silicon may be produced from high-purity quartz and chemically purified charcoal in a 50-kVA arc furnace. The major contamination source is shown to be impurities from the carbon reducing materials.
Automatic continuous silicon-coating facility is used to process 100 by 10 cm graphite-coated ceramic substrates for silicon solar cells. Process reduces contamination associated with conventional dip-coating processes, improving material service life.
Device using two independent silicon sources for ultra-high-vacuum deposition on large substrates can deposit P and N types of silicon simultaneously. Efficient water cooled copper shield supports and cools structure and isolates two filaments.
A new calculation of the effects of thermal stresses during growth on silicon ribbon quality is reported. Thermal stress distributions are computed for ribbon growth under a variety of temperature profiles. A growth rate of 55 cu cm/min with a single ribbon was achieved. The growth of RTR ribbon with a fairly uniform parallel dendritic structure was demonstrated. Results with two approaches were obtained for reducing the Mo impurity level in polycrystalline feedstock. Coating the Mo substrate with Si3N4 does not effect thermal shear separation of the polyribbon; this process shows promise of improving cell efficiency and also increasing the useful life of the molybdenum substrate. A number of solar cells were fabricated on RTR silicon grown from CVD feedstock.
Initial sessile drop experiments on SiC, Si3N4 and A1N were conducted. Very promising results were achieved on both SiC and Si3N4 where minimal penetration of these CNTD coatings by molten silicon was observed. More detailed characterization of the CNTD microstructures was accomplished as well as X-ray characterization of the third and fourth candidate materials system sets (i.e. A1N and altered Si3N4). Polished sections of post sessile drop specimens were also prepared and evaluated. The techniques of full scale crucible hot pressing were developed and die grinding development was initiated. The apparatus for measurement of oxygen partial pressure was reconstructed and calibrated. The sessile drop temperature measurement procedure was calibrated for absorption by the pyrex view-port and additional Auger electron analysis was performed at the interface of molten silicon with CNTD Si3N4 and A1N.