NASA NTRS · 19790000076
Silicon source for vacuum deposition
Abstract
Device using two independent silicon sources for ultra-high-vacuum deposition on large substrates can deposit P and N types of silicon simultaneously. Efficient water cooled copper shield supports and cools structure and isolates two filaments.
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Racette, G. W., Rutecki, D. J.. 1979-08-01. Silicon source for vacuum deposition. https://ntrs.nasa.gov/citations/19790000076
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