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The effect of power/temperature step stress when applied to the zener diode JANTX1N3031B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect of power/temperature step stress when applied to a field effect transistor JANTX2N4856 manufactured by Texas Instruments and Teledyne was evaluated. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control units were maintained for verification of the electrical parametric testing.
The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured by Siemens and General Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parameteric testing.
The effect of power/temperature step stress when applied to the switching diode JANTX1N5618 manufactured by Semtech and Micro Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect of power/temperature step stress when applied to a variety the zener diode JANTX2N3016B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect of power/temperature step stress when applied to the transistor JANTX2N2484, manufactured by Raytheon and Teledyne was evaluated. Forty-eight samples from each manufacturer were divided equally (16 per group) into three groups and submitted to the processes outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N937B manufactured by Motorola and Siemens. Test results, and failure analyses are included.
If thin film cells are to be considered a viable option for terrestrial power generation their reliability attributes will need to be explored and confidence in their stability obtained through accelerated testing. Development of a thin film accelerated test program will be more difficult than was the case for crystalline cells because of the monolithic construction nature of the cells. Specially constructed test samples will need to be fabricated, requiring committment to the concept of accelerated testing by the manufacturers. A new test schedule appropriate to thin film cells will need to be developed which will be different from that used in connection with crystalline cells. Preliminary work has been started to seek thin film schedule variations to two of the simplest tests: unbiased temperature and unbiased temperature humidity. Still to be examined are tests which involve the passage of current during temperature and/or humidity stress, either by biasing in the forward (or reverse) directions or by the application of light during stress. Investigation of these current (voltage) accelerated tests will involve development of methods of reliably contacting the thin conductive films during stress.
An Engineering-of-Failure approach to designing and executing an accelerated product qualification test was performed to support a risk assessment of a work-around necessitated by an on-orbit failure of another piece of hardware on the Mars Global Surveyor spacecraft.
The effect of power and temperature stresses when applied to a variety of semiconductor devices is summarized.
Co-extruded, non-fluoropolymer backsheet films for photovoltaic (PV) modules have gained popularity in recent years based on their cost competitiveness. However, their viability has been thrown into question as a result of widespread, early-life field-failures of some materials, particularly the polyamide (PA)-based “AAA” backsheet product. Failure to detect weaknesses in those earlier products could be due, in part, to insufficient quality testing practices. New testing protocols have recently been developed to better evaluate such materials. Here we show the testing results for a non-fluoropolymer, co-extruded PA-based backsheet film, which demonstrates greater durability than AAA and some commercial fluoropolymers. Using material characterization techniques including Fourier-transform infrared spectroscopy (FTIR), wide-angle x-ray scattering (WAXS), differential scanning calorimetry (DSC), X-ray photoelectron spectroscopy (XPS), elongation-to-break (ETB), and optical microscopy we perform a comprehensive failure analysis to better understand the materials weaknesses. This analysis can ultimately inform how best to improve the material and extend its lifetime. This work serves as a demonstration that some materials should not be discounted due to a single poorly designed product and that more appropriate qualification testing with subsequent materials analysis can be used to develop better materials.
Abstract Potential‐induced degradation‐polarization (PID‐p) can reduce module power, but how to project the extent to which PID‐p may occur in field conditions considering the factors of system voltage, condensed moisture, temperature, and illumination has not been clarified. Using tunnel oxide passivated contact (TOPCon) modules, this work demonstrates a method to test full‐size crystalline silicon PV modules for PID‐p to provide field‐representative results. In initial screening tests with positive or negative 1000 V electrical bias applied at 60°C for 96 h using Al foil electrodes on the glass surfaces, the module type exhibited reversible PID‐p only on the front face when the cell circuit was in negative voltage potential. No PID was detected on the rear after testing in either polarity. We then evaluated the PID‐p sensitivity on the front side under different UV irradiances while maintaining the glass surface wet to estimate real‐world susceptibility to PID‐p. The magnitude of the observed behavior was fit using a previously developed charge transfer and depletion by light model. Whereas power loss with −1000 V applied to the cell circuit at 60°C for 96 h in the dark was about 30%, testing the module front under 0.051 W·m −2 nm −1 at 340 nm UVA irradiation using fluorescent tubes, the mean degradation was only 3%. When the modules were tested in the dark for PID‐p with in situ dark current–voltage (I‐V) characterization, the thermal activation energy for degradation was 0.71 eV; for recovery in the dark, it was 0.58 eV. Whereas recovery from the degraded state at 60°C in the dark without voltage bias was 5% absolute in 38 h, rapid recovery of about 5% absolute was observed with 1000 W·s/m 2 exposure at 25°C using a flash tester.
Mesh, properties, initial conditions, injection/withdrawal rates for modelling thermal, hydrological, and mechanical effects of fluid injection to and withdrawal from ground for Stockton University reservoir cooling system (aquifer storage cooling system), Galloway, New Jersey, for unscheduled two hour injection at 133 % designed capacity, on fine scale grid, with some results. Second simulation of J.T. Smith, E. Sonnenthal, P. Dobson, P. Nico, and M. Worthington, 2021. Thermal-hydrological-mechanical modeling of Stockton University reservoir cooling system, Proceedings of the 46th Workshop on Geothermal Reservoir Engineering, Stanford University, SGP-TR-218, from which Figures 6-9, pertain.
Organic light-emitting diode (OLED) sources are a potential solid-state lighting technology for use in indoor lighting applications. Some of the advantages offered by OLEDs include thin profiles, low glare, diffuse lighting, and unique form factors. The U.S. Department of Energy (DOE) has released six technical reports focused on OLED technologies to provide information and analysis to the lighting industry. These reports include the evaluation of two different field deployment sites, a market analysis, a tear-down analysis, and two independent assessments of the performance of select commercially available OLED products. This report builds on earlier DOE efforts with OLED technology by updating information about previously benchmarked commercial OLED products. Specifically, this report provides updated findings about the robustness and reliability of commercial OLED products.
Lamination-free minimodules are constructed with silicon solar cells between glass sheets and an edge seal of polyisobutylene and silicone. These samples are stressed using a repeated sequential testing sequence including ultraviolet-containing simulated solar spectrum light exposure at elevated temperature, damp heat, humidity freeze, and thermal cycling adapted from the International Electrotechnical Commission (IEC) TS 63209-2:2022. The minimodule performance throughout the stressing is characterized by flash testing and electroluminescence imaging. Results are compared to conventional laminated minimodules using the same type of solar cells. The lamination-free minimodules experience up to 8% power loss compared to roughly 3% for the laminated versions. However, those losses, dominated by current and fill factor, are caused by glass soiling and busbar ribbon separation on the cells. When glass is replaced and the stressed cells are contacted with probes bypassing the delaminated ribbons, the initial performance is recovered, and overall losses of the lamination-free samples become negligible.
Data for the purpose of evaluating the effect of power/temperature step stress when applied to a variety of semiconductor devices are presented. The transistor JANTX2N3637 manufactured by Transitron and Motorola is studied. A total of 48 samples from Transitron and 41 samples from Motorola were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. Results are reported.
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied to the diode JANTX1N5420 manufactured by Unitrode and Micro-Semiconductor is presented. A total of 48 samples from each manufacturer was submitted to the processes outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
Layered aluminum polymer capacitors (APC) may be viable replacements to current chip tantalum capacitors due to their lower ESR, weight, and smaller size. So far, there is a lack of information regarding the reliability of these parts. Available technical literature is mostly related to the effect on humidity. Although APCs have a limited moisture resistance, it may be contained to the level sufficient for space applications. In this work, seven types of commercial APCs manufactured by four vendors and rated to voltages from 6.3 to 35 V were used to evaluate reliability of the parts under environmental stresses and highly accelerated life tests. Characteristics of the parts, including breakdown voltages, the level of anomalous charging currents (ACC), capacitance, DF, ESR and leakage currents were measured in the process of storage at high-temperatures (from 100 to 150 °C) and high humidity at 85 °C. Monitored highly accelerated life tests have been carried out at temperatures of 85 °C and 125 °C and voltages varying from 1.2 to 1.9 times the rated voltage. Degradation processes and reliability of APCs have been analyzed and compared to polymer tantalum capacitors.