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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Measurement of irregularities in angular velocities of rotating assemblies in memory devices on magnetic carriers

Problems in measurement of irregularities in angular velocity of rotating assemblies in memory devices with rigid and flexible magnetic data carriers are discussed. A device and method for determination of change in angular velocities in various frequency and rotation rate ranges are examined. A schematic diagram of a photoelectric sensor for recording the signal pulses is provided. Mathematical models are developed to show the amount of error which can result from misalignment of the test equipment.

Virakas, G. I.↗
NASA NTRS1985

Self-structured, current aperture approach for bubble memory

An approach to magnetic bubble memory which incorporates dual conductor current access drive with a self-structured (strongly interacting) bubble lattice is described. This is expected to provide higher operating speeds, defect tolerance, and higher bit density for a given bubble size as compared to present field access bubble devices. Bubble spacings of 2.5 bubble diameters are projected for a prototype device. Experimental work on device components including detectors, major/minor loops, and gates is described. Defect tolerance has also been demonstrated.

Nelson, G. L.↗
NASA NTRS1994

Nonvolatile random access memory

A nonvolatile magnetic random access memory can be achieved by an array of magnet-Hall effect (M-H) elements. The storage function is realized with a rectangular thin-film ferromagnetic material having an in-plane, uniaxial anisotropy and inplane bipolar remanent magnetization states. The thin-film magnetic element is magnetized by a local applied field, whose direction is used to form either a 0 or 1 state. The element remains in the 0 or 1 state until a switching field is applied to change its state. The stored information is detcted by a Hall-effect sensor which senses the fringing field from the magnetic storage element. The circuit design for addressing each cell includes transistor switches for providing a current of selected polarity to store a binary digit through a separate conductor overlying the magnetic element of the cell. To read out a stored binary digit, transistor switches are employed to provide a current through a row of Hall-effect sensors connected in series and enabling a differential voltage amplifier connected to all Hall-effect sensors of a column in series. To avoid read-out voltage errors due to shunt currents through resistive loads of the Hall-effect sensors of other cells in the same column, at least one transistor switch is provided between every pair of adjacent cells in every row which are not turned on except in the row of the selected cell.

Wu, Jiin-Chuan↗
NASA NTRS1974

Magnetic bubble domain memories

Some attractive features of Bubble Domain Memory and its relation to existing technologies are discussed. Two promising applications are block access mass memory and tape recorder replacement. The required chip capabilities for these uses are listed, and the specifications for a block access mass memory designed to fit between core and HPT disk are presented. A feasibility model for a tape recorder replacement is introduced.

Ypma, J. E.↗
NASA NTRS1991

Magnetic Analog Random-Access Memory

Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

Katti, Romney R.↗
NASA NTRS1980

An 8 x 10 to the 5th bit bubble memory cell for spacecraft applications

A multiple chip magnetic bubble memory cell design developed for NASA embodies the low power, low weight, environmental tolerance and reliability necessary for successful operation in spacecraft launch and mission environments. Packaging of multiple chips in a common magnetic bias, drive coil assembly reduces weight and volume overhead per chip and also reduces the number of coil drive components required. This 8 x 10 to the 5th bit cell is conduction cooled and provides a metal and ceramic sealed hermetic chip environment.

Becker, F. J.↗
DOE OSTI2026

Inductance meets memory in a quantum magnet

Orbital degrees of freedom offer a largely untapped route to emergent dynamical phenomena in correlated quantum materials. However, it remains unclear whether collective orbital states can intrinsically generate both reactive and memory functionalities in a bulk system. Here we show that in the ferrimagnet Mn₃Si₂Te₆, nonequilibrium reconfiguration of chiral orbital currents produces both emergent inductance and nonvolatile memristance as intrinsic properties of a single crystal. At low frequency and under a magnetic field along the c axis, coherent orbital-current domains generate robust clockwise inductive I-V loops. At higher frequency and low field, current-driven first-order reconfiguration leads to incomplete reversal and metastable trapping, producing an intrinsic electromotive force and a finite remanent voltage at zero current. These results establish orbital currents as a class of quantum state variables that encode both reactive and memory functionalities, opening routes toward intrinsically reconfigurable and energy-efficient electronic systems.

Cao, Tristan [University of Colorado, Boulder]↗
NASA NTRS1976

Optical mass memories

Optical and magnetic variants in the design of trillion-bit read/write memories are compared and tabulated. Components and materials suitable for a random access read/write nonmoving memory system are examined, with preference given to holography and photoplastic materials. Advantages and deficiencies of photoplastics are reviewed. Holographic page composer design, essential features of an optical memory with no moving parts, fiche-oriented random access memory design, and materials suitable for an efficient photoplastic fiche are considered. The optical variants offer advantages in lower volume and weight at data transfer rates near 1 Mbit/sec, but power drain is of the same order as for the magnetic variants (tape memory, disk memory). The mechanical properties of photoplastic film materials still leave much to be desired.

Bailey, G. A.↗
NASA NTRS1994

Improved Reading Gate For Vertical-Bloch-Line Memory

Improved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.

Wu, Jiin-Chuan↗
NASA NTRS1994

Partial-Thickness Grooves In A VBL Memory Device

Bias magnetic fields tailored to match those needed elsewhere in device. Grooves through part of thickness of magnetic garnet storage layer of vertical-Bloch-line (VBL) memory device used to confine magnetic bubble and stripe domains in desired storage areas. VBL-memory concept described in "Vertical-Bloch-Line Memory" (NPO-18467).

Katti, Romney R.↗
NASA NTRS1979

Implementing a bubble memory hierarchy system

This paper reports on implementation of a magnetic bubble memory in a two-level hierarchial system. The hierarchy used a major-minor loop device and RAM under microprocessor control. Dynamic memory addressing, dual bus primary memory, and hardware data modification detection are incorporated in the system to minimize access time. It is the objective of the system to incorporate the advantages of bipolar memory with that of bubble domain memory to provide a smart, optimal memory system which is easy to interface and independent of user's system.

Segura, R.↗
DOE OSTI2026

A compact in situ polarized 3He neutron spin filter for the diffractometer VULCAN at the Spallation Neutron Source

We have built and commissioned a compact in situ 3He polarizer based on spin-exchange optical pumping for the engineering materials diffractometer, named VULCAN, at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory. The system achieved 78% 3He polarization with a short pump-up time constant of 2.2 h. Its first deployment in an in situ half-polarized neutron diffraction experiment on a magnetic shape memory alloy, Ni–Mn–Ga, revealed changes in magnetization coupled to deformation twinning under compression. With this new capability, VULCAN has become the first diffractometer at SNS capable of performing polarized neutron experiments, opening new opportunities to study a wider range of magnetism-related material behaviors under varied thermal, mechanical, electrical, and/or magnetic fields.

Fu, Sichao [ORNL] (ORCID:0009000846771640)↗