NASA NTRS · 19940000492
Improved Reading Gate For Vertical-Bloch-Line Memory
Abstract
Improved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.
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Wu, Jiin-Chuan, Stadler, Henry L., Katti, Romney R.. 1994-09-01. Improved Reading Gate For Vertical-Bloch-Line Memory. https://ntrs.nasa.gov/citations/19940000492
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