NASA NTRS · 19940000244
Partial-Thickness Grooves In A VBL Memory Device
Abstract
Bias magnetic fields tailored to match those needed elsewhere in device. Grooves through part of thickness of magnetic garnet storage layer of vertical-Bloch-line (VBL) memory device used to confine magnetic bubble and stripe domains in desired storage areas. VBL-memory concept described in "Vertical-Bloch-Line Memory" (NPO-18467).
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Katti, Romney R., Wu, Jiin-Chuan, Stadler, Henry L.. 1994-05-01. Partial-Thickness Grooves In A VBL Memory Device. https://ntrs.nasa.gov/citations/19940000244
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