SEARCH · Engineering Papers

Results for “Semiconductor”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 433 records · Page 24

All sources NASA NTRS DOE OSTI

NASA NTRS1978

The present situation and forecasts of semiconductor elements performance within the microwave range, 1970-1985

The present situation and possible developments over the period 1970-1985 for active semiconductor elements in the microwave range are outlined. After a short historical survey of FT techniques, the following are discussed: Generation, power amplification, amplification of small signals, frequency conversion, detection, electronic signal control and integrated microwave circuits.

Peterson, B.↗

NASA NTRS1977

Quantum statistical theory of semiconductor junctions in thermal equilibrium

Free carrier and electric field distributions of one-dimensional semiconductor junctions are evaluated using a quantum mechanical phase-space distribution and its corresponding Boltzmann equation. Attention is given to quantum and exchange corrections in cases of high doping concentrations when carrier densities become degenerate. Quantitative differences between degenerate and classical junction characteristics, e.g., maximum electric field and built-in voltage and carrier concentration within the transition region, are evaluated numerically.

Von Roos, O.↗

NASA NTRS1980

CdInP semiconductor alloy

Semiconductor alloy of CdSInP deposited onto CdS substrate using liquid-phase epitaxy (LPE) employed in solvent is replacement for InP n- and p-type heterojunction layers contained in GaAsp laser devices. Alloy will aid in lowering current density of laser and enhance its longevity and CW operation at room temperature.

Hawrylo, F. Z.↗

NASA NTRS1978

Application of semiconductor diffusants to solar cells by screen printing

Diffusants were applied onto semiconductor solar cell substrates, using screen printing techniques. The method was applicable to square and rectangular cells and can be used to apply dopants of opposite types to the front and back of the substrate. Then, simultaneous diffusion of both dopants can be performed with a single furnace pass.

Evans, J. C., Jr.↗

NASA NTRS1978

Multilevel metallization method for fabricating a metal oxide semiconductor device

An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.

Hollis, B. R., Jr.↗

NASA NTRS1979

Semiconductor Grade, Solar Silicon Purification Project

A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

Ingle, W. M.↗

NASA NTRS1977

Optimum antireflection coating for Antireflection-coated Metal-Oxide-Semiconductor /AMOS/ solar cells

Consideration is given to the design of a single-layer optimum antireflection coating for AMOS (antireflection-coated metal-oxide-semiconductor) solar cells to match the entire sunlight spectrum. The energy conversion efficiency is maximized by maximizing the open-circuit voltage and the short-circuit current. The former is maximized by oxidation techniques and the latter is maximized by the light-coupling into the solar cell. With reference to the effective index of refraction as obtained by ellipsometry, examples of optimum antireflection coatings for 60-A Au-GaAs solar cells are presented.

Yeh, Y. C. M.↗

NASA NTRS1979

A note on photocurrents in extrinsic semiconductors

The advent of the concept of holes and careful determination of mobilities have made it possible to realize that the potential difference between the contacts of an irradiated semiconductor in the absence of current flow is due to the difference in mobility of electrons and holes. In this paper, a preliminary analysis shows that charge neutrality and zero-current condition are compatible. This situation is clarified and it is found that the equation for the electric field E in the absence of current is not absolutely correct even under low-level injection conditions. In particular, it is shown that fairly large currents can be generated by suitable light sources, currents which are entirely due to the disparity between electron and hole mobilities.

Von Roos, O.↗

NASA NTRS1979

The role of thermophysics in the design, optimization and understanding of semiconductor crystal growth in space

The compound semiconductor material PbSnTe has been investigated by NASA Langley Research Center as part of the Material Processing in Space (MPS) experiment in the framework of the Space Shuttle program. The long-range goal of the research is the improving of the performance of infrared detectors for use in remote sensing experiments. Three distinct techniques will be used in the low-g environment of space: two techniques involving bulk growth from melt and a vapor growth technique. In order to establish realistic estimates of the required time for experiments and to determine the thermal gradients that will be required to avoid constitutional supercooling, the diffusion coefficients must be accurately measured, however more data especially in the vapor-solid phase relations are needed.

Crouch, R. K.↗

NASA NTRS1978

Laser velocimetry with diode junctions semiconductor lasers

Measurements of mean and fluctuating axial velocity have for the first time been made in a seeded pipe flow with a semiconductor laser velocimeter. Several compact velocimeters have been constructed using laser diodes. While the intended applications have restricted the final instrument to operate in a coaxial backscatter mode, operation has been demonstrated in forward and side scattering modes. In all cases the instrument could be classed as dual beam. An instrument has been constructed to be installed in a model airfoil and will be mechanically driven to measure the flow over a 75-mm chord distance. The instrument occupies a volume measuring 100 mm x 100 mm x 40 mm. The compactness has been aided by using an avalanche photodiode instead of a photomultiplier tube.

Franke, J. M.↗

NASA NTRS1979

Semiconductor millimeter and centimeter wave radiometer for the study of the radiation of an underlying surface

A theoretical and experimental investigation of a superheterodyne radiometer system with input frequency converter and intermediate frequency modulation is presented. Conditions are found, at which the temperature sensitivity of the device does not deteriorate. A sensitivity function to external parameters (temperature, heterodyne power) of a radiometer system with intermediate frequency modulation and a Schottky diode frequency converter is presented and calculated. Use of a frequency converter at the second harmonic of the heterodyne permitted simplication of the radiometer design and the use of a semiconductor heterodyne. A 3 cm range intermediate frequency amplifier permitted the use of centimeter wave radiometer signals. Fluctuation sensitivity of radiometers with a 1 sec time constant is 0.3 K at 3.4 mm and 0.06 K at 3 cm.

Bordonskiy, G. S.↗

NASA NTRS1979

Semiconductor grade, solar silicon purification project

Experimental apparatus and procedures used in the development of a 3-step SiF2(x) polymer transport purification process are described. Both S.S.M.S. and E.S. analysis demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). Recent electrical analysis via crystal growth reveals that the product contains compensated phosphorus and boron. The low projected product cost and short energy payback time suggest that the economics of this process will result in a cost less than the goal of $10/Kg(1975 dollars). The process appears to be readily scalable to a major silicon purification facility.

Ingle, W. M.↗

NASA NTRS1980

The 3-5 semiconductor solid solution single crystal growth

Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

Gertner, E. R.↗

NASA NTRS1979

Optical feedback effects on the performance of Pb/1-x/Sn/x/Se semiconductor lasers

The effects of optical feedback on the performance of Pb(1-x)Sn(x)Se semiconductor lasers are reported. Experimental results are presented to demonstrate that uncontrolled optical feedback can occur from optics external to the laser cavity and that these external optical elements can result in the formation of a composite cavity. This composite cavity can sustain a number of narrow closely spaced emission modes with the spectral characteristics of these modes dependent upon the parameters of the cavity. With weak feedback, the spectral width of the amplitude envelope of the new lasing modes resembles that of the original laser mode with no optical feedback. With strongly coupled feedback the envelope of the external cavity modes substantially broadens the apparent linewidth of the laser. It is shown that these effects can be eliminated, and, moreover, they offer the potential for obtaining spectrally narrow single-mode emission from Pb-salt lasers through the use of carefully designed external cavities.

Harward, C. N.↗

NASA NTRS1979

Minimizing pattern effects in semiconductor lasers at high rate pulse modulation

This paper deals with analytical and experimental work related to modulation of a semiconductor laser used in high bit rate communication. The approach is based upon minimizing the charge storage effect by a proper choice of the area of the modulating pulses and the bias current. The concept of using additional current pulses to probe for variations in electron density between pulses is investigated. The primary limitation on bit rate is found to be the ability to generate laser drive pulses free of ringing or similar transients. This and the 300 ps pulsewidth, an experimental constraint, limit the bit rate to about 1 Gbit/s. However, by using this approach it appears that bit rates considerably higher than 2 Gbits/s could be reached with sufficiently accurate control of drive pulse shape. It is found that the laser bias and the current pulse area had to be controlled within 1 percent and 10 percent, respectively.

Torphammar, P.↗

NASA NTRS1982

Fibre-Optic Semiconductor Temperature Gage

"Safe" temperature gage for explosive liquids is based on optical transmission. Semiconductor crystal inserted between input and output optical fibers is temperature-sensing element in a new approach to measuring temperature of cryogens. Since no electrical components are immersed in liquid, new sensor minimizes danger of electrically ignited explosions in hazardous cryogens such as oxygen and hydrogen. Gage also useful for handling noncryogenic liquids in aircraft, automobiles, boats and water tanks.

Sharma, M.↗

NASA NTRS1980

Semiconductor devices for optical communications in 1 micron band of wavelength

Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

Suematsu, Y.↗

NASA NTRS1981

Development of lead salt semiconductor lasers for the 9-17 micron spectral region

Improved diode lasers of Pb sub 1-x Sn sub x Se operating in the 9-17 micrometers spectral region were developed. The performance characteristics of the best lasers exceeded the contract goals of 500 microW/mode at T 30K in the 9-12 micrometers region and 200 microW/mode at T 18K in the 16-17 micrometers region. Increased reliability and device yields resulted from processing improvements which evolved from a series of diagnostic studies. By means of Auger electron spectroscopy, laser shelf storage degradation was shown to be characterized by the presence of In metal on the semiconductor crystal surfaces. Studies of various metal barrier layers between the crystals and the In metal led to the development of an improved metallurgical contacting technology which has resulted in devices with performance stability values exceeding the contract goal of a one year shelf life. Lasers cycled over 500 times between 300K and 77K were also shown to be stable. Studies on improved methods of fabricating striped geometry lasers indicated that good spectral mode characteristics resulted from lasers which stripe widths of 12 and 25 micrometers.

Linden, K. J.↗