NASA NTRS · 19790000491
CdInP semiconductor alloy
Abstract
Semiconductor alloy of CdSInP deposited onto CdS substrate using liquid-phase epitaxy (LPE) employed in solvent is replacement for InP n- and p-type heterojunction layers contained in GaAsp laser devices. Alloy will aid in lowering current density of laser and enhance its longevity and CW operation at room temperature.
Keep this discovery
Explore connections, maps & timelines
Hawrylo, F. Z.. 1980-06-01. CdInP semiconductor alloy. https://ntrs.nasa.gov/citations/19790000491
Cite the original work for its findings. Save a collection to share your selection of sources.