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At least 415 records · Page 23

Required Filtering to Optimize Use of TOS

This presentation was originally given to ATD-2 industry partners at the Surface CDM (Collaborative Decision Making) Team (SCT) & Flow Evaluation Team (FET) meeting at NTX on 2/20/2020. The briefing presented lessons learned from Stormy 19, an overview of how terminal restrictions are handled by the ATD-2 system, and additional Trajectory Option Sets (TOS) route filtering capabilities planned for Stormy 20.

ATD-2↗

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗

AD8065 Voltage Feedback Amplifier’s Total Ionizing Dose Characterization Report

The purpose of this testing was to characterize Analog Devices’ AD8065 FastFET amplifier for low-dose rate (LDR) total ionizing dose (TID) response based on the Lucy project requirements and will be used on the L’ORRI instrument being built by Johns Hopkins University Applied Physics Lab. The AD8065 is a voltage feedback amplifier with FET inputs developed with the proprietary eXtra Fast Complementary Bipolar (XFCB) process. The amplifier boasts low noise operation and very high input impedance with a wide supply voltage range.

Megan Casey↗

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗

STRV RADMON: An Integrated High-Energy Particle Detector

The RADMON (Radiation Monitor) was developed as a compact device with a 4-kbit SRAM particle detector and two p-FET total dose monitors. Thus it can be used as a spacecraft radiation alarm and in situ total dose monitor. This paper discusses the design and calibration of the SRAM for proton, alpha, and heavy ion detection. Upset rates for the RADMON, based on a newly developed space particle flux algorithm, are shown to vary over eight orders of magnitude.

RADMON↗

A Combined Al-Mg/Pb-Pb Age of the Solar System

Astrophysical models of planet formation and protoplanetary disk evolution demand precise and accurate timing of the sequence of events in the solar nebula, relative to a time t=0, usually taken to be during the short epoch of CAI (Ca-rich, Al-rich inclusion) formation. Most CAIs formed withlive26Al (mean-life τ26= 1.034 Myr [1]), with an abundance 26Al/27Al ≈ (26Al/27Al)SS= 5.23 × 10-5[2]. We adopt this as the widespread level of 26Al in the solar nebula at t=0. Assuming spatial homogeneity of 26Al, an inclusion that had less 26Al, (26Al/27Al)0, formed a time Δt26= τ26ln[(26Al/27Al)SS/ (26Al/27Al)0] after t=0.These ages are typical precise to within ±0.1 Myr. Igneous bulk meteorites and inclusions can be relatively dated by the Al-Mg chronometer, but only ifΔt26<6 Myr. The Pb-Pb system is useful as a longer relative chronometer. It yields absolute ages tPb using 207Pb/206Pb, 206Pb/204Pb, and 238U/235U ratios measured indifferent portions of a sample, assuming certain half-lives [4]. These absolute ages are uncertain to within ±9 Myr due to uncertainties in the 235U half-life[3], but times of formation ΔtPb= tCAI–tPb relative to t=0, are more precise(±0.5Myr),iftCAI can be found. Here, tCAI means the Pb-Pb age that would be measured in CAIs using the half-lives the community typically uses, if they achieved isotopic closure at t=0. Unfortunately, direct Pb-Pb dating of CAIs has not definitively determined tCAI. Based on four CAIs with canonical (26Al/27Al)0,[5,6] found tPb= 4567.30 ± 0.16 Myr. No other CAI ages with measured 238U/235U have been reported in the refereed literature, but there are hints of other CAIs with ages tPb= 4568.0 ± 0.2 Myr [7] and tPb= 4568.3 ± 0.2 Myr [8].It is unclear whether anyof these igneous type B CAIs isotopically closed at t=0 or represents tCAI. Instead of measurements, we advocate finding tCAI by minimizing the discrepancies between the Al-Mg and Pb-Pb chronometers. Assuming Δt26=ΔtPb, we find the implied t’CAI= tPb+Δt26, then define t*CAIas the weighted mean of the t’CAI. t*CAIis the best guess for the Pb-Pb age of t=0; the assumption of homogeneity is justified if the t’CAI cluster within errors around t*CAI. This statistical approach is similar to, but improves on, that of[9]. We find t*CAI= 4568.73 ± 0.16 Myr. Below we discuss our methodology and the implications of this age for CAIs, 1.4 Myr older than the reported and typically used age 4567.30±0.16 Myr. Methods: We base our estimate of t*CAIon five achondrites for which published (26Al/27Al)0and Pb-Pb ages exist: the quenched angrites D’Orbigny, Sahara 99555 (SAH 99555), and Northwest Africa (NWA) 1670; the pseudo-eucrite Asuka 881394; and the inner disk achondrite. All are “NC” (non-carbonaceous) achondrites that likely cooled quickly enough that the Al-Mg and Pb-Pb systems achieved isotopic closure simultaneously. We also considered the “CC” (carbonaceous chondrite-like) achondrites NWA 2796 and NWA 6704, butdo not include them in our fit. Al-Mg and Pb-Pb seem not to have closed simultaneously, possibly because formation in the outer disk from volatile-rich composition led to slower cooling. Of the 8 chondrules from NWA 5697 measured by [20,21], we also consider the 4 for which 238U/235U was measured: 2-C1, 5-C2, 3-C5, 11-C1.Depending on their post-formation thermal histories, the Al-Mg and Pb-Pb systems in chondrules may or may not have closed simultaneously. Table 1: (26Al/27Al)0, Pb-Pb ages of selected samplesSample(26Al/27Al)0/ 10-6RefPb-PbRefD’Orbigny3.98±0.15104563.43±0.19♮10-12SAH 995553.64±0.18104563.88±0.2712NWA16705.92±0.59104564.39±0.24*10Asuka 88139413.1±0.5613-154564.98±0.1715NWA 73253.03±0.14164563.4±2.616NWA 27963.94±0.16174562.89±0.5917NWA 67043.03±0.14184562.76±0.26192-C17.56±1.53204567.57±0.56*215-C27.04±1.51204567.54±0.52*213-C58.85±1.83204566.20±0.63*2111-C15.55±1.84204565.84±0.72*21*regression based on one subset of data points ♮weighted mean of two datasets Pb-Pb ages are proportional to the intercept of the line formed by linear regression of 207Pb/206Pb vs. 206Pb/204Pb data from various washes, leachates and residues of acid dissolution of a sample. Because contamination by terrestrial or primordial Pb is pervasive, some fractions must be excluded from regressions to ensure a fit with acceptable mean squares weighted deviation (MSWD). Usually points are excluded based on low [Pb], or low 206Pb/204Pb ratio(low radiogenic component), with single outliers identified [11,12,15,16,17]. In the starred examples (Table 1)and the case of 3 CAI Pb-Pb ages [5], up to half the points were excluded solely because did not fit a pre-determined line. This approach is vulnerable to confirmation bias and produces fits with low MSWD and too-low Pb-Pb age uncertainty. Regressing the same data points as [10], were produce the Pb-Pb age of NWA 1670 of 4564.39±0.24 Myr. But selecting other combinations of data points, other, equally valid, isochrons yield ages from 4563.77±0.21 Myr to 4564.64±0.23 Myr. Similar arguments apply to the Pb-Pb isochrons built by [21] for chondrules 2-C1 (we find 4567.33±0.44 to 4567.85±0.46 Myr), 5-C2 (4566.84±0.53 to 4567.70±0.44 Myr), 3-C5 (4565.84±0.54to 4567.04±0.54)and 11-C1 (4565.36±0.51 to 4565.74±0.45 Myr). Our adopted ages for these and NWA 1670 are listed in Table 2.Table 2. tCAI estimated from various components, using our regressions for the chondrules & NWA 1670.SampleΔt26(Myr)tPb(Myr)t’CAI(Myr)D’Orbigny5.05±0.044563.43±0.194568.48±0.19SAH 995555.14±0.054563.88±0.274569.02±0.27NWA16704.64±0.104564.21±0.634568.85±0.67Asuka 8813943.81±0.044564.98±0.174568.79±0.17NWA 73255.33±0.054563.4±2.64568.7±2.6NWA 27965.06±0.044562.89±0.594567.95±0.59NWA 67045.29±0.134562.76±0.264568.05±0.292-C12.00±0.214567.59±0.704569.59±0.725-C22.07±0.224567.23±0.914569.30±0.933-C51.84±0.214566.44±1.124568.28±1.1411-C12.32±0.344565.52±0.664567.84±0.73achondrite4568.72±0.16chondrules4568.76±0.58combined4568.73±0.16A weighted average of the five NC achondrites(or just D’Orbigny, SAH 99555 and Asuka 881394)yields t*CAI= 4568.72 ± 0.16Myr. All are consistent with this value to within 1.8σ, and MSWD=1.5. Including the 4 U-corrected chondrules, t*CAI= 4568.73± 0.16Myrwith MSWD=1.66, which is statistically significant. All chondrules and NC achondrites are consistent with this to within 1.8σ, (Figure 1).Figure 1. Al-Mg formation times after t=0 vs. Pb-Pb ages. The five NC achondrites and four chondrules are consistent with a Pb-Pb age of t=0 of 4568.7 Myr. Discussion: The data from achondrites and chondrules are consistent with a single Pb-Pb age at t=0, justifying the assumption of 26Al homogeneity. The age, 4568.7 Myr, is ≈1.4 Myr older than the commonly accepted Pb-Pb age of CAIs that formed with canonical 26Al/27Al at t=0 [3]. Others have interpreted the discrepancy to signify 26Al heterogeneity in the CAI-forming region[5,21]. We suggest instead that CAIs were exposed to transient heating events that reset the Pb-Pb system without disturbing the Al-Mg system. Notably, chondrules typically experienced transient heating at these times in the nebula [22]. If so, direct measurements of CAIs will not yield as reliable a Pb-Pb age of t=0 as statistical approaches like this and that of [9].References:[1] Auer et al. 2009. [2] Jacobsen, B et al. 2008, EPSL 272, 353-364. [3] Tissot, Fet al. 2017, GCA 213, 593-617.[4] Villa, I et al. 2016, GCA 172, 387-392.[5] Amelin, Y et al. 2010, EPSL 300, 343-350.[6] Connelly, Jet al. 2012, Science 338, 651.[7] Bouvier, Aet al. 2011, LPICo 1639, 9054. [8] Bouvier, Aand Wadhwa, M2010, Nat Geosci 3, 637-641.[9] Nyquist, Let al. 2009, GCA 73, 5115-5136.[10] Schiller et al. 2015. [11] Wadhwa & Brennecka 2012. [12] Tissot et al. 2017. [13] Nyquist et al. 2003. [14] Wadhwa et al. 2009. [15] Wimpenny et al. 2019, GCA 244, 478-501.[16] Koefoed et al. 2016, GCA 183, 31-45. [17] Bouvier, A et al. 2011, GCA 75, 5310-5323. [18] Sanborn, Met al. 2019, GCA 245, 577-596. [19] Amelin, Yet al. 2019, GCA 245, 628-642.[20] Bollard, Jet al. 2017, Sci Adv 3 ,e1700407. [21] Bollard, Jet al. 2019, GCA 260, 62-83.[22] Villeneuve, J et al. 2009, Science 325, 985

S. J. Desch↗

Bulk direct gap MoS2 by plasma induced layer decoupling

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

36 MATERIALS SCIENCE↗

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors

Nuclear Magnetic Resonance (NMR) electronics that employ selective solid-state isolation of circuit elements can include solid-state switches, such as back-to-back Field Effect Transistor (FET) pairs, and isolated gate drive electronics adapted to operate the solid-state switches in order to selectively decouple induction coils from receive electronics. The solid-state switches can be placed in series to achieve higher standoff voltages, and can be configured for low on resistance and short switching times. The gate drive electronics can include electrical isolation components adapted to enhance standoff voltages and reduce electrical noise at the selectively isolated receive electronics.

Walsh, David O.↗

A 90 GHz Amplifier Assembled Using Flip-Chip Technology

This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.

FET amplifiers Millimeter wave FETs bump-bonding m↗

Ultra‐Narrow Phosphorene Nanoribbons Produced by Facile Electrochemical Process

Abstract Phosphorene nanoribbons (PNRs) have inspired strong research interests to explore their exciting properties that are associated with the unique two‐dimensional (2D) structure of phosphorene as well as the additional quantum confinement of the nanoribbon morphology, providing new materials strategy for electronic and optoelectronic applications. Despite several important properties of PNRs, the production of these structures with narrow widths is still a great challenge. Here, a facile and straightforward approach to synthesize PNRs via an electrochemical process that utilize the anisotropic Na + diffusion barrier in black phosphorus (BP) along the [001] zigzag direction against the [100] armchair direction, is reported. The produced PNRs display widths of good uniformity (10.3 ± 3.8 nm) observed by high‐resolution transmission electron microscopy, and the suppressed B 2g vibrational mode from Raman spectroscopy results. More interestingly, when used in field‐effect transistors, synthesized bundles exhibit the n‐type behavior, which is dramatically different from bulk BP flakes which are p‐type. This work provides insights into a new synthesis approach of PNRs with confined widths, paving the way toward the development of phosphorene and other highly anisotropic nanoribbon materials for high‐quality electronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Chemiresistor sensor based on ion-imprinted polymer (IIP)-functionalized rGO for Cd(II) ions in water

This study reports the design and development of a novel chemiresistor (CR) sensor using ion imprinted polymer (IIP)-functionalized reduced graphene oxide (rGO) [IIP/rGO-CR] for cadmium ions (Cd(II)) determination in water. The sensor consisted of a CR transducer made of rGO channel bridging source and drain electrodes prepared by self-assembly and thermal reduction of graphene oxide (GO) on Au interdigitated electrodes chip fabricated on Si/SiO 2 substrate. The IIP was then grafted on rGO using surface-initiated reversible addition-fragmentation chain transfer (RAFT) polymerization with polyethylenimine (PEI) and methylacrylic acid (MAA) as dual functional monomers and Cd(II) ions as template through UV light-initiated copolymerization. The IIP functionalized on rGO acted as an effective recognition element that modulated the resistance of rGO-CR upon binding of Cd(II), enabling Cd(II) detection at ppb level in aqueous solutions. The prepared IIP/rGO-CR sensor worked effectively in the linear range of 2~200ppb and achieved a limit of detection (LOD) of 0.83 ppb, which is lower than the World Health Organization guidelines of 3ppb for drinking water quality. The developed sensor of IIP/rGO-CR showed a high selectivity against a variety of trace and heavy metal ions found in water and good stability for up to 60 days when stored at room temperature for Cd(II) determination in water. Further, the sensor was successfully applied to analyzing Cd(II) spiked in tap, lake and river waters with a 94.5%–113.5% recovery, demonstrating a high degree of accuracy even in complex water samples. Finally, our results illustrated that the CR sensor of IIP functionalized rGO provides a potential platform for sensitive, robust and low-cost environmental analysis of Cd(II) in water.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Atomically Precise PdSe 2 Pentagonal Nanoribbons

We report atomically precise pentagonal PdSe 2 nanoribbons (PNRs) fabricated on a pristine PdSe 2 substrate with a hybrid method of top-down and bottom-up processes. The PNRs form a uniform array of dimer structure with a width of 2.4 nm and length of more than 200 nm. In situ four-probe scanning tunneling microscopy (STM) reveals metallic behavior of PNRs with ballistic transport for at least 20 nm in length. Density functional theory calculations produce a semiconducting density of states of isolated PNRs and find that the band gap narrows and disappears quickly once considering coupling between PNR stacking layers or interaction with the PdSe 2 substrate. The coupling of PNRs is further corroborated by Raman spectroscopy and field-effect transistor measurements. The facile method of fabricating atomically precise PNRs offers an air-stable functional material for dimensional control.

36 MATERIALS SCIENCE↗

A portable and reusable sensor system based on graphene for real-time and sensitive detection of lead ions in water

Long-term exposure to Pb 2+ can cause irreversible damage to the nervous, cardiovascular, and reproductive systems. Therefore, developing a fast and sensitive detection system capable of monitoring minuscule concentrations of Pb 2+ is essential. In this study, we demonstrated a fully portable sensor system enabling rapid, sensitive, and real-time monitoring of Pb 2+ . The sensor system adopted the remote-gate field-effect transistor (RGFET) detection scheme and was easy to operate, even for non-experts. The sensor system comprised two printed circuit boards (PCBs): a sensor PCB with a remote-gate electrode and an analyzer PCB with a metal-oxide-semiconductor field-effect transistor (MOSFET) transducer and peripheral electronics to manage sensor signals. To achieve a high sensitivity for Pb 2+ , we utilized graphene ink drop-casted on the sensor PCB as a sensing membrane. The graphene film was easy to deposit and remove, enabling the sensor PCB to be reused multiple times. The sensor system was further linked to a smartphone application that instantly monitors the sensor response, allowing for rapid point-of-use detection. The sensor exhibited a high sensitivity of 21.7% when the limit of detection (LOD) value of 1 nM (∼0.2 ppb) was detected, and the typical detection time for each sample was approximately 60 seconds. This portable sensor system advances sensing technologies and could potentially supplement expensive, laborious conventional sensing equipment.

54 ENVIRONMENTAL SCIENCES↗

Analysis and Characterization of Four-quadrant Switches based Commutation Cell

A four-quadrant switch (FQS) blocks either polarity voltage and controls current flow in both directions. Unlike voltage-source converters, in which two-quadrant switches operate over a narrow voltage range, four-quadrant switches are required to operate over a wide range of both voltage and current in applications such as matrix converters and current-source converters. Furthermore, matrix converters require multi-step commutation schemes compared to two-step schemes for current-bidirectional switch based voltage-source converters and voltage-bidirectional switch based current-source converters. This paper provides a generalized overview of commutation schemes used for two and four quadrant switches based two-level commutation cells, identifies comparison indices for FQS commutation schemes, and discusses the need for adaptive commutation-step times for wide voltage and current variation applications. Also, the static and dynamic characteristics of 1.2 kV rated FQS implementations utilizing commercial SiC MOSFETs from four different manufacturers and novel monolithic SiC BiDirectional Field Effect Transistor (BiDFET) have been reported.

Commutation cell, four quadrant switch, SiC Bidire↗

Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches

The 1.2 kV 4H-SiC BiDirectional Field Effect Transistor (BiDFET) is the first monolithic SiC bidirectional switch, which offers a lower voltage drop and semiconductor devices count alternative to the reverse-voltage-blocking (RB) switch used in the current-source converters (CSC). The bidirectional switch based CSC also allows DC-link current reversal for bidirectional power flow and provides multiple system-level benefits in a buck-boost AC/DC system consisting of buck-type DC/DC converter and CSC. This paper discusses the selection of buck converter duty cycle and CSC modulation index for the system’s buck-boost operation with a wide variation in DC voltage. CSC modulation schemes categorized based on the number of hard-turn-on transitions per switching cycle are also analyzed along with the three-step and four-step commutation schemes that are essential for the CSC commutation cells. Finally, the different schemes are evaluated and compared through the experimental results of a 10 kW, 480 VRMS, LL/ (400 − 800) V AC/DC system.

Bidirectional switches, four-quadrant switches, cu↗

Dissecting components of the Campylobacter jejuni fetMP-fetABCDEF gene cluster under iron limitation

Campylobacter jejuni is a leading cause of bacterial gastroenteritis worldwide. Acute infection can be an antecedent to highly debilitating long-term sequelae. The expression of iron acquisition systems is vital for C. jejuni to survive the low iron availability within the human gut. The C. jejuni fetMP-fetABCDEF gene cluster is known to be upregulated during human infection and under iron limitation. While FetM and FetP have been functionally linked to iron transport in prior work, here we assess the contribution of each of the downstream genes (fetABCDEF) to C. jejuni growth during both iron-depleted and iron-replete conditions. Significant growth impairment was observed upon disruption of fetA, fetB, fetC, and fetD, suggesting a role in FetMP-mediated iron acquisition for each encoded protein. FetA expression was not dependent on the presence of FetB, FetC, FetD, FetE, or FetF. The functions of the putative thioredoxins FetE and FetF were redundant under iron-limited growth, requiring a double deletion (ΔfetEF) to exhibit a growth defect. C. jejuni FetE was expressed, and the structure was solved to 1.50 Å, revealing structural similarity to thiol-disulfide oxidases. Functional characterization in biochemical assays showed that FetE reduced insulin at a slower rate than Escherichia coli Trx and that together, FetEF promoted substrate oxidation in cell extracts, suggesting that FetE (and presumably FetF) are oxidoreductases that can mediate oxidation in vivo. This study advances our understanding of the contributions of the fetMP-fetABCDEF gene cluster to virulence at a genetic and functional level, providing foundational knowledge toward mitigating C. jejuni-related morbidity and mortality.

59 BASIC BIOLOGICAL SCIENCES↗