Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors

Walsh, David O.; Grunewald, Elliot D.

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DOE OSTI · 2542510

Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors

Walsh, David O.·Grunewald, Elliot D.

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Abstract

Nuclear Magnetic Resonance (NMR) electronics that employ selective solid-state isolation of circuit elements can include solid-state switches, such as back-to-back Field Effect Transistor (FET) pairs, and isolated gate drive electronics adapted to operate the solid-state switches in order to selectively decouple induction coils from receive electronics. The solid-state switches can be placed in series to achieve higher standoff voltages, and can be configured for low on resistance and short switching times. The gate drive electronics can include electrical isolation components adapted to enhance standoff voltages and reduce electrical noise at the selectively isolated receive electronics.

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Walsh, David O., Grunewald, Elliot D.. 2024-08-20. Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors. https://www.osti.gov/biblio/2542510

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