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All sources NASA NTRS DOE OSTI

DOE OSTI2020

Atomically Precise PdSe 2 Pentagonal Nanoribbons

We report atomically precise pentagonal PdSe 2 nanoribbons (PNRs) fabricated on a pristine PdSe 2 substrate with a hybrid method of top-down and bottom-up processes. The PNRs form a uniform array of dimer structure with a width of 2.4 nm and length of more than 200 nm. In situ four-probe scanning tunneling microscopy (STM) reveals metallic behavior of PNRs with ballistic transport for at least 20 nm in length. Density functional theory calculations produce a semiconducting density of states of isolated PNRs and find that the band gap narrows and disappears quickly once considering coupling between PNR stacking layers or interaction with the PdSe 2 substrate. The coupling of PNRs is further corroborated by Raman spectroscopy and field-effect transistor measurements. The facile method of fabricating atomically precise PNRs offers an air-stable functional material for dimensional control.

36 MATERIALS SCIENCE↗

NASA NTRS1989

Ga:Ge array development

Work at the University of Arizona and at Lawrence Berkeley Laboratory on the development of a far infrared array camera for the Multiband Imaging Photometer on the Space Infrared Telescope Facility (SIRTF) is discussed. The camera design uses stacked linear arrays of Ge:Ga photoconductors to make a full two-dimensional array. Initial results from a 1 x 16 array using a thermally isolated J-FET readout are presented. Dark currents below 300 electrons s(exp -1) and readout noises of 60 electrons were attained. Operation of these types of detectors in an ionizing radiation environment are discussed. Results of radiation testing using both low energy gamma rays and protons are given. Work on advanced C-MOS cascode readouts that promise lower temperature operation and higher levels of performance than the current J-FET based devices is described.

Young, Erick T.↗

NASA NTRS1989

HgCdTe 256x256 NWIR FPA

Researchers developed a HgCdTe 256x256 focal plane array (FPA) which operates in the 1 to 5 micron band. This is presently the largest demonstrated HgCdTe FPA. The detector material is HgCdTe on sapphire (PACE-1 technology) which has a low thermal expansion mismatch with silicon. The multiplexer is a CMOS FET-switch device processed through a commercial silicon foundry. The multiplexer input is direct injection and the charge capacity is about 2 times 10 to the 7th power electrons. The kTC limited read noise is 400 electrons. Researchers demonstrated high background imaging using the device. The broadband quantum efficiency is measured to be 59 percent. Dark currents less than 0.1 pA were measured at 77 K for detectors processed on PACE-1 material with 4.9 microns cutoff. The dark currents decrease as the temperature is lowered, and researchers are presently studying the T less than 77 K characteristics. The interconnect yield is greater than 95 percent. The devices are available for astronomical applications.

Vural, Kadri↗

NASA NTRS2014

Single-Event Effect Report for EPC Series eGaN FETs: Comparison of EPC1000 and EPC2000 Series Devices for Destructive SEE

Recent testing of the EPC1000 series eGaN FETs has shown sensitivity to Single Event Effects (SEE) that are destructive. These effects are most likely the failure of the very thin gate structure in HEMT architecture. EPC has recently changed the doping of the substrate to improve the performance and the SEE response. This testing compares the SEE response of both devices.

Scheick, Leif↗

DOE OSTI2023

Magnetoelectric XNOR logic gate device

A magneto-electric (ME) XNOR logic gate device includes a conducting device; and a ME-FET coupled to the conducting device. The ME-FET can be formed of a split gate; a first gate terminal coupled to a first portion of the split gate for receiving a first input signal; a second gate terminal coupled to a second portion of the split gate for receiving a second input signal; a source terminal coupled to a ground line; and a drain terminal coupled to the conducting device.

Gaul, Nishtha Sharma↗

NASA NTRS2020

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗

NASA NTRS2020

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Single Event Effects (SEE)↗

DOE OSTI2020

Integrated circuits with programmable gate timing signal generation for power converters and apparatus comprising the same

An apparatus is disclosed that includes a semiconductor device to control a power converter having two or more power FETs. The semiconductor device includes a gate signal generator configured to produce two or more gate signals able to drive the two or more FETs. The gate signal generator has programmable timing configuration parameters to control operation of the two or more gate signals, wherein the timing configuration parameters are digitally programmed via a memory in the semiconductor device. The memory may be implemented with fuses, other non-volatile memory or volatile memory. The parameters may be fixed or updated during a lifetime of the apparatus. A serial-to-parallel conversion may be used to input the parameters. Optimization methods may be performed to determine parameters considered to be optimal. The apparatus may also include the power converter.

42 ENGINEERING↗

NASA NTRS1995

Multi-Shielded p-FET Dosimeter

A compact device was developed for dose measurements where each of four p-FETs has a different shield. Radiation data from the STRV-1b shows that p-FETs can be used to map the radiation inside a spacecraft.

p-FET dosimeters↗

NASA NTRS2007

G4-FETs as Universal and Programmable Logic Gates

An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

Johnson, Travis↗

DOE OSTI2025

Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with V th < -6 V and High on-Current

In this work, a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) is demonstrated that operates in an Accumulation Channel rather than a Transfer Doping regime. The FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated Al 2 O 3 is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for the formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of Al 2 O 3 . Completed devices with gate/channel length of 1 µm demonstrate record threshold voltage < -6 V with on-current > 80 mA mm -1 . Carrier density and mobility figures extracted by CV analysis indicate a high 2D charge density of ≈ 2 × 10 12 cm -2 and increased hole mobility of 110 cm 2 V -1 s -1 in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a powerful new strategy to greatly improve carrier mobility and enable enhanced high power and high frequency diamond transistor performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2021

EMI Mitigation of a &Cacute;uk-Based Power-Electronic System Using Switching-Sequence-Based Control

Switching-sequence-based control (SBC) laws when designed based on topological switching behavior can have positive effects on slow- and fast-scale dynamics of a power-electronic system (PES). The slow-scale control can encompass fast PES state regulation and tracking, based on predefined objective, while fastscale control can address differential-mode (DM) and commonmode (CM) spectral-peak energy associated with PES switching operation. Such control laws may offer enhanced programmability to conventional PES design where bulky electromagnetic interference (EMI) filters have been traditionally used to reduce EMI of switching power converters to meet EMI regulatory standards. An EMI filter is always a less programmable solution since it is usually designed for the worst-case EMI mitigation and usually overkill for a PES operating under reduced load condition. The control scheme outlined in this article offers EMI mitigation across wide operating regions without compromising PES regulation. Moreover, it does so by use of switching sequences that guarantee the reachability of the PES dynamics using an advanced Lyapunov-function-based approach. SBC is a powerful tool to generate control actions for a PES based on multivariate PES state constraints. Hence, contemporary EMI regulatory standards are used as constraints in the SBC formulation to operate the PES under wide operating regime while autonomously mitigating the EMI levels. The work may be of paramount importance for operating the ultra-fast-transition recent wide-bandgap semiconductor devices like GaN–FET and SiC MOSFET under higher power with increasing switching frequencies, which is usually desirable for increased power density and reduced switching losses. Here, a hardware Cuk–PES operated ´ with GaN–FETs is fabricated and is used for case illustration. It is shown by experimental results how SBC mitigate DM and CM EMI noise of the PES while maintaining regulation even for the higher order nonminimum phase PES, while reducing sensor requirements using state observer derived from the switching model of the PES.

42 ENGINEERING↗

NASA NTRS1986

Test of IR arrays on the Kuiper Airborne Observatory

NASA's Kuiper Airborne Observatory, which is a C-141 transport aircraft equipped with a 90-cm, all-reflective altazimuth telescope, has been engaged in the Kuiper Infrared Technology Experiment. Attention is presently given to the Experiment's flight series for state-of-the-art two-dimensional, 500-element arrays that use either blocked impurity band or bulk silicon devices. The switched FET readout scheme used on the three arrays flown thus far yields exceptionally low crosstalk. System sensitivities are found to be sufficient for the detection of both pointlike and extended sources; several of each type have been used in staring and scanning experiments.

Russell, R. W.↗

NASA NTRS1995

High-performance passive microwave survey on Josephson Junctions

The quasi-optical generations of images of objects with their internal structure in millimeter (MM) and submillimeter (SMM) bands is one of prime problems of modern radioelectronics. The main advantage of passive MM imaging systems in comparison with visible and infrared (IR) systems is small attenuation of signals in fog, cloud, smoke, dust and other obscurants. However, at a panoramic scanning of space the observation time lengthens and thereby the information processing rate becomes restricted so that single-channel system cannot image in real time. Therefore we must use many radiometers in parallel to reduce the observation time. Such system must contain receiving sensors as pixels in multibeam antenna. The use of Josephson Junctions (JJ) for this purpose together with the cryoelectronic devices like GaAs FET (field effect transistors) or SQUIDS for signal amplifications after JJ is of particular interest in this case.

Denisov, A. G.↗

NASA NTRS2008

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗

DOE OSTI2021

High performance ionic-liquid-gated air doped diamond field-effect transistors

Here we report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ~200 cm 2 V –1 s –1 . In addition we demonstrate a rapid fabrication scheme for achieving stable high performance devices useful for determining optimal growth and fabrication conditions. We achieved H-termination using hydrogen plasma treatment with a sheet resistivity as low as ~1.3 kΩ/sq. Conductivity through the FET channel is studied as a function of bias voltage on the liquid ion-gated electrode from –3.0 to 1.5 V. Stability of the H-terminated diamond surface was studied by varying the substrate temperature up to 350 °C. It was demonstrated that the sheet resistance and carrier densities remain stable over 3 weeks in ambient air atmosphere even at substrate temperatures up to 350 °C, whereas increasing temperature beyond this limit has effected hydrogenation. This study opens new avenues for carrying out fundamental research on diamond FET devices with ease of fabrication and high throughput.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

NASA NTRS1989

MCTs and IGBTs - A comparison of performance in power electronic circuits

There is a continuous demand for improvements in the quality of switching power devices, such as higher switching frequency, higher withstand voltage capability, larger current-handling capability, and lower conduction losses. However, for single-conduction-mechanism devices (SCRs, GTOs, BJTs, FETs), possessing all these features is probably unrealizable for physical reasons. An attractive solution appears to be double-mechanism devices, in which the features of both a minority carrier device (BJT or SCR) and a majority carrier device (MOSFET) are embedded. Both IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controlled thyristors) belong to this family of double-mechanism devices and promise to have a major impact on converter circuit signs. The authors deal with the major features of these two devices, pointing out those that are most critical to the design of converter topologies. In particular, the two devices have been tested both in a chopper and in two resonant link converter topologies, and the experimental results are reported.

Sul, S. K.↗

DOE OSTI2020

Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

MoS 2 has great interest for nanoscale electronic devices, including transistors and sensors. Defect‐free structure, clean interface with the gate dielectric, and metals with suitable metal–semiconductor junctions are key for reliable devices. Molybdenum is shown as an excellent electrode for MoS 2 field‐effect transistors (FETs), but the correlation among device current, field‐effect mobility, and the low‐frequency noise (LFN) with number of atomic layers is not studied. Furthermore, the impact of Mo/MoS 2 Schottky barrier on electronic injection and scattering in the device needs to be understood. Herein, by studying the FETs with channels of different numbers of atomic‐layer thicknesses, it is shown that a molybdenum metal contact to MoS 2 provides reliable current injection with low Schottky barrier height, low contact resistance, low electron–phonon scattering, and negligible impurity scattering. The mobility and LFN are optimal at a channel thickness of ≈12 atomic layers, which is consistent with the “mobility maximum window” in MoS 2 transistors with prior studies using other contact metals.

Kwon, Jiseok↗