DOE OSTI · 2222315
Magnetoelectric XNOR logic gate device
Abstract
A magneto-electric (ME) XNOR logic gate device includes a conducting device; and a ME-FET coupled to the conducting device. The ME-FET can be formed of a split gate; a first gate terminal coupled to a first portion of the split gate for receiving a first input signal; a second gate terminal coupled to a second portion of the split gate for receiving a second input signal; a source terminal coupled to a ground line; and a drain terminal coupled to the conducting device.
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Gaul, Nishtha Sharma, Marshall, Andrew, Dowben, Peter A., Nikonov, Dmitri E.. 2023-09-12. Magnetoelectric XNOR logic gate device. https://www.osti.gov/biblio/2222315
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