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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Atomic layer deposition of nanofilms on porous polymer substrates: Strategies for success

Atomic layer deposition (ALD) is a versatile technique for engineering the surfaces of porous polymers, imbuing the flexible, high-surface-area substrates with inorganic and hybrid material properties. Previously reported enhancements include fouling resistance, electrical conductance, thermal stability, photocatalytic activity, hydrophilicity, and oleophilicity. However, there are many poorly understood phenomena that introduce challenges in applying ALD to porous polymers. In this paper, we address five common challenges and ways to overcome them: (1) entrapped precursor, (2) embrittlement, (3) film fracture, (4) deformation, and (5) pore collapse. These challenges are often interrelated and can exacerbate one another. To investigate these phenomena, we applied various ALD chemistries to porous polymers including polyethersulfone, polysulfone, polyvinylidene fluoride, and polycarbonate track-etched membranes. Reaction-diffusion modeling revealed why certain precursors and processing conditions result in embrittling subsurface material growth, entrapment of unreacted precursors, and nongrowth. We quantify the limits of ALD processing temperatures that are dictated by thermal expansion mismatch and can lead to fractured ALD films. The results herein allow us to make recommendations to avoid, mitigate, or overcome the difficulties encountered when performing ALD and plasma-enhanced ALD on porous polymers. We intend this article to serve as a “lessons learned” guide informed by previous experience to provide a better understanding of the difficulties and limitations of ALD on porous polymers and knowledge-based guidelines for successful depositions. This knowledge can accelerate future research and help experimentalists navigate and troubleshoot as they expose porous polymers to reactive precursor vapors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

On-Demand Designing of Cathode Internal Surface Architecture for Dramatic Enhancement of SOFC Performance and Durability

This project is aimed to design and modify the internal surfaces of porous composite cathode from currently commercially viable Solid Oxide Fuel Cells (SOFCs), using additive manufacturing process of Atomic Layer Deposition (ALD). The material systems being investigated are commercial composite electrodes complex three-dimensional topographies. In term of the chemistry of the ALD layer applied on the internal surface of the porous cathode, this project has employed commercially relevant electrolyte, electrocatalyst and noble metal materials set. Such materials are fully compatible with the commercial fuel cells, and this project has developed special nanostructure on the surface of the commercial composite cathodes. The formation of the designed nanoarchitecture on the surface of SOFC cathode has been achieved through precise control of ALD parameters and their effect on overall cell performance and resultant electrochemical reaction mechanism of cathodes has been investigated through full cell electrochemical performance testing and nanostructure characterization by transmission electron microscopy (TEM). Under the support of this award, following has been achieved: (1). For cathode materials in solid oxide fuel cells (SOFCs), such as perovskite mixed conductor La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-x (LSCF), cation surface segregation and consequently losing conductivity and active sites for the oxygen reduction reaction (ORR) are problematic. To mitigate the cation segregation and enhance SOFC durability, further decorating the internal backbone surface using the desired electrocatalysts could be a promoting approach. Commonly, the cation segregation such as Sr is very volatile, so the effective surface decoration is ideally conformal. Nevertheless, the conformal surface coating would inevitably alter the ORR pathways that initially take place on the surface of the backbone. To reveal the impact of the conformal coating on both the catalytic activity and the conductivity of the cathode, the unary electrocatalyst of Pt or CoO x , was applied to the LSCF/SDC composite electrode of inherently functional SOFCs, respectively. Both ALD coating layers evolve strong interaction with the LSCF composite cathode. Upon operations, the Pt coating layer remains conformal on LSCF grain surfaces but turns into discrete particles on SDC grain surfaces. Meanwhile, CoO x conformal coating grows to be the discrete nanograins on both the LSCF and SDC grains. ALD coating of the cathode alone reduces the ohmic resistance up to 28 % for the entire cells. The increased conductivity induced by the ALD coating of Pt or CoO x is ascribed to different mechanisms. For the inherent functional SOFCs, the present study presents a novel and feasible approach to apply a conformal, dense coating layer on the surface of a mixed conductor, simultaneously increasing the conductivity and durability of the SOFC cathode. (2). High resistance of the oxygen electrode still significantly hinders the state-of-the-art Solid Oxide Fuel Cells (SOFCs). In particular, for an oxygen electrode consisting of mixed electronic and ionic conductors, such as perovskite lanthanum strontium cobalt ferrite (LSCF), it deteriorates due to its low chemical stability of the grain surface. Such degradation is often associated with the segregation of cations. To prevent the cation surface segregation and its resultant perovskite phase decomposition, we demonstrate a conformal ultra-thin (7-10 nm) surface heterogeneous coating layer consisting of subjacent discrete Pt nanoparticles capped with a superjacent fully dense conformal CoO x layer. The performance studies indicate the ALD coating reduces the cell series resistance by up to 40 %. The conformal CoO x layer consists of randomly orientated but single-layered nanograins, with high-density intergranular and surface grain boundaries serving as the electrochemical reaction sites and facilitating mass transport. The conformal coating layer appears to have successfully suppressed the Sr outward diffusion and confined the Sr enriched layer to a ~ 2 nm interface perovskite phase between the coating layer and the LSCF grain surface. Moreover, this ultra-thin Sr enriched perovskite layer presumably possesses high oxygen vacancy and high ionic conductivity and further imposes tensile strain to the LSCF grain surfaces. With the combination of a conformal CoO x nanoionics, Sr enriched layer, and its strained interface, the ALD coating induced surface layer is estimated to have a conductivity of ~ 1.27x10 4 S/cm, which is over two orders magnitude of that from LSCF at 750 ºC.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Enhanced Catalyst Durability and Sulfur Tolerance by Atomic Layer Deposition (CRADA Final Report)

This CRADA advanced the use of atomic layer deposition (ALD) catalyst coatings to improve sulfur tolerance and demonstrate improved catalyst durability for biomass conversion chemistries. This project leveraged National Laboratory and industry expertise for ALD catalyst coating development between NREL, ALD NanoSolutions, Inc. ("ALD NanoSolutions"), and Johnson Matthey PLC ("Johnson Matthey"). To better understand the role of ALD coatings on catalyst activity and durability, a joint experimental and computational effort combined bench-scale ALD catalyst synthesis, material characterization, catalyst testing, and modeling of catalyst surface energetics. In addition, to demonstrate the commercial relevance of this technology, scaled ALD coated catalysts were subjected to continuous testing and accelerated aging to validate performance gains. Results were used to inform ALD catalyst coating manufacturing cost models, as well as biobased chemical process cost models.

09 BIOMASS FUELS↗
DOE OSTI2023

Site-Selective Atomic Layer Deposition on Rutile TiO 2 : Selective Hydration as a Route to Target Point Defects

Routes to area-and especially site-selective atomic layer deposition (ALD) remain an enticing challenge in precision surface science, despite the potentially game-changing capability for many energy applications. An unparalleled level of surface reaction control is required to direct ALD to select sites on the same nominal material, for example, targeted growth on distinct phases, facets, step-edges, and/or defects. However, as a sequential surface synthesis method, ALD is uniquely suited to these challenges, including the possibility of selective deposition at defective surface atom arrangements. Here, we computationally identify conditions for site-selective ALD through hydration of surface defects, including oxygen vacancies and titanium interstitials on low-index rutile TiO 2 facets. First-principles computation is used to predict, as a function of temperature, the hydroxylation of defects that are targeted by proton-exchange-mediated ALD processes. In situ ellipsometric measurements of ALD Al 2 O 3 nucleation on TiO 2 (110) single crystals prepared with and without abundant oxygen vacancies demonstrate striking contrast, corroborating computational predictions and revealing a mechanistically clear path to site-selective ALD.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Mathematical Modelling of Arctic Polygonal Tundra with Ecosys : 1. Microtopography Determines How Active Layer Depths Respond to Changes in Temperature and Precipitation

Microtopographic variation that develops among features (troughs, rims, and centers) within polygonal landforms of coastal arctic tundra strongly affects movement of surface water and snow and thereby affects soil water contents (θ) and active layer depth (ALD). Spatial variation in ALD among these features may exceed interannual variation in ALD caused by changes in climate and so needs to be represented in projections of changes in arctic ALD. For this study, increases in near-surface θ with decreasing surface elevation among polygon features at the Barrow Experimental Observatory (BEO) were modeled from topographic effects on redistribution of surface water and snow and from lateral water exchange with a subsurface water table during a model run from 1981 to 2015. These increases in θ caused increases in thermal conductivity that in turn caused increases in soil heat fluxes and hence in ALD of up to 15 cm with lower versus higher surface elevation which were consistent with increases measured at BEO. The modeled effects of θ caused interannual variation in maximum ALD that compared well with measurements from 1985 to 2015 at the Barrow Circumpolar Active Layer Monitoring (CALM) site (R 2 = 0.61, RMSE = 0.03 m). For higher polygon features, interannual variation in ALD was more closely associated with annual precipitation than mean annual temperature, indicating that soil wetting from increases in precipitation may hasten permafrost degradation beyond that caused by soil warming from increases in air temperature. This degradation may be more rapid if increases in precipitation cause sustained wetting in higher features.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2020

Polyphenol-Sensitized Atomic Layer Deposition for Membrane Interface Hydrophilization

Improvements in energy-water systems will necessitate fabrication of high-performance separation membranes. To this end, interface engineering is a powerful tool for tailoring properties, and atomic layer deposition (ALD) has recently emerged as a promising and versatile approach. However, most non-polar polymeric membranes are not amenable to ALD processing due to the absence of nucleation sites. Here, a sensitization strategy for ALD-coating is presented, illustrated by membrane interface hydrophilization. Facile dip-coating with polyphenols effectively sensitizes hydrophobic polymer membranes to TiO2 ALD coating. Tannic acid-sensitized ALD-coated membranes exhibit outstanding underwater crude oil repulsion and rigorous mechanical stability through bending and rinsing tests. As a result, these membranes demonstrate outstanding crude oil-in-water separation and reusability compared to untreated membranes or those treated with ALD without polyphenol pretreatment. A possible polyphenol-sensitized ALD mechanism is proposed involving initial island nucleation followed by film intergrowth. This polyphenol sensitization strategy enriches the functionalization toolbox in material science, interface engineering, and environmental science.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Atomic Layer Deposition for Advanced Electrode Design in Photoelectrochemical and Triboelectric Systems

As a powerful and versatile thin film deposition technique, atomic layer deposition (ALD) has been increasingly involved in the manufacturing of many energy harvesting and storage devices. Next to the applications of ALD in lithium ion batteries and supercapacitors, ALD in photoelectrochemical (PEC) electrode and triboelectric nanogenerators (TENGs) development is relatively new. Most current progress in these two promising directions is not quite comprehensively covered. This article intends to summarize the most recent and representative research regarding the application of ALD in the fabrication of PEC electrodes and TENG active materials. We first discuss ALD of nanostructured electrochemically active materials and surface coating for PEC photoelectrodes, and the corresponding influence on solar energy conversion efficiency and electrode stability are discussed and compared. A unique high-temperature ALD-based approach, called surface-reaction-limited pulsed chemical vapor deposition (SPCVD) is then introduced as a new approach to the synthesis of 3D branched NW architecture, which offers tremendous advantages in photoelectrode design. At last, a new exploration of ALD in the field of mechanical energy harvesting is presented as an effective strategy to modify the dielectric property of polymer thin films for TENG development.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A revisit to atomic layer deposition of zinc oxide using diethylzinc and water as precursors

Nanophase zinc oxide (ZnO) has been widely studied as an important multifunctional material in many applications. Atomic layer deposition (ALD) is a unique thin-film synthesis technique, featuring its extreme uniformity, unrivaled conformal coverage, low deposition temperature, and precise controllability. Using diethylzinc (DEZ) and water as precursors, ALD has been reported previously for growing nanophase ZnO thin films. However, the growth characteristics and the resultant ZnO crystallinity have not been well characterized and understood. To this end, we revisited the ALD process of ZnO using DEZ and water. Through employing a suite of advanced characterization techniques, we systematically addressed the growth characteristics, morphological changes, and the crystallinity evolution of ZnO along with growth temperature in the range of 30-250 °C. The growth characteristics of the ALD ZnO films were investigated using in situ quartz crystal microbalance (QCM), scanning electron microscopy, atomic force microscopy, and synchrotron-based X-ray reflectivity. The crystallinity of the ALD ZnO films was determined using synchrotron-based X-ray diffraction and high-resolution transmission electron microscopy. In addition, through further analyzing QCM data, we proposed the adsorption-limited surface reaction for ALD ZnO growth with the temperature-dependent number of -OH surface group reacting with one DEZ molecule. Furthermore, this study contributes to offer new and deep insights on the fundamental ALD process of ZnO.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Site-specific surface reactivity on SnO 2 : Evaluating selective atomic layer deposition processes

Area selective atomic layer deposition (AS-ALD) is a bottom-up synthesis approach with potential for deposition with molecular level precision. Here, the site-specific hydration of metal oxide substrates, combined with surface H 2 O-selective ALD processes, provides a potentially powerful path to targeted synthesis. Density functional theory (DFT) calculations are used to predict the thermodynamics of ALD precursor reactivity and hydration for (001), (101), (110), and (100) rutile SnO 2 facets as a function of temperature. Trimethylaluminum (TMA) and dimethyl aluminum isopropoxide (DMAI) dimers are predicted to react with both dehydrated and hydrated SnO 2 (001), (101), and (110) facets at ALD-relevant temperatures, while the SnO 2 (100) facet is predicted to be uniquely unreactive with TMA and DMAI monomers as well as dehydrate near 177 °C making this facet more amenable to targeted ALD. In situ ellipsometric studies of Al 2 O 3 ALD on polycrystalline SnO 2 at 150 °C are consistent with the computational predictions of rapid and unselective nucleation, in stark contrast to inhibited and selective ALD on isostructural rutile TiO 2 .

Atomic Layer Deposition↗
DOE OSTI2025

Surface engineering of polymeric membranes with metal oxides for improved fouling resistance and superior oil-water separation

Rapid industrial growth has increased the need for efficient membranes to separate oil-water emulsions. Polyvinylidene fluoride (PVDF) membranes, although widely used due to their chemical inertness and favorable mechanical properties, suffer from fouling due to their intrinsic hydrophobicity. Modifying these membranes after fabrication offers a practical solution as it easily fits into existing large-scale manufacturing processes. Atomic layer deposition (ALD), an atomically-precise vapor phase surface modification technique, can create ultrathin metal oxide layers that greatly improve membrane hydrophilicity without significantly affecting the original pore size. However, PVDF's lack of reactive chemical moieties makes ALD challenging. Here, in this study, we present a simple alkali treatment that greatly enhances ALD nucleation and growth on PVDF membranes. This treatment imparts exceptional oil-water emulsion separation capabilities and antifouling behavior in PVDF membranes after just a few ALD cycles, surpassing the performance of PVDF membranes coated with hundreds of ALD cycles. This dramatic reduction in the number of ALD cycles required could enable cost-effective modification of commercial PVDF membranes at scale using spatial, roll-to-roll ALD. These modified membranes outperform reported modified PVDF membranes, with >99 % permeance recovery and <1 % irreversible loss of permeance and >98 % oil rejection from oil-water emulsions over 100 h continuous operation, making them promising for advanced water purification technologies.

Atomic layer deposition↗
DOE OSTI2021

Tunable Atomic Layer Deposition into Ultra-High-Aspect-Ratio (>60000:1) Aerogel Monoliths Enabled by Transport Modeling

Atomic layer deposition (ALD) modification of ultra-high-aspect-ratio structures (>10,000:1) is a powerful platform with applications in catalysis, filtration, and energy conversion. However, the deposition of conformal and tunable ALD coatings at these aspect ratios remains challenging, resulting in empirical tradeoffs between precursor utilization and reaction time. Here, we demonstrate tunable control of the ALD infiltration depth into an aerogel monolith (AM) and develop a reaction-diffusion model to accurately describe the coating process. Specifically, we investigate the ALD exposure time and precursor dose needed to conformally coat a silica AM with pore sizes of ~20 nm, a monolith thickness of ~2.5 mm, and aspect ratios exceeding 60,000:1. We demonstrate complete infiltration into the AM, which is quantified by elemental mapping. A reaction-diffusion model is developed, which accounts for multiple doses and precursor depletion in the ALD chamber during an exposure step. The experimentally validated model enables the prediction and tuning of infiltration depth into a tortuous, high-aspect-ratio structure such as an AM, allowing for the synthesis of rationally designed material architectures. Additionally, the model allows for co-optimization of the total deposition time and percentage of unreacted precursor, which are important for the manufacturability and sustainability of ALD processing. Lastly, we demonstrate that ultra-thin ALD Al 2 O 3 coatings can be used to stabilize silica AMs against structural degradation under high-temperature annealing conditions (700-800 °C), by limiting changes in surface area and monolith volume. As a result, this improved high-temperature stability has implications for numerous aerogel applications, including catalysis and thermal insulation.

14 SOLAR ENERGY↗
DOE OSTI2015

Low Temperature ABC-Type Ru Atomic Layer Deposition through Consecutive Dissociative Chemisorption, Combustion, and Reduction Steps

Thermal atomic layer deposition (ALD) of noble metals is frequently performed using molecular oxygen as the nonmetal precursor to effect a combustion-type chemistry at relatively high temperatures of 300 °C. Bis(ethylcyclopentadienyl)ruthenium (Ru(EtCp)2) is one of the common used metal precursors for Ru ALD. Using Ru(EtCp)2 and oxygen as reactants, Ru ALD was acheived at near 300 °C. Here, we demonstrate that Ru ALD can proceed at as low as 150 °C by using successive exposures to oxygen and hydrogen as the co-reactants. In situ quartz crystal microbalance (QCM) and quadrupole mass spectroscopy (QMS) measurements both suggest that this ABC-type ALD occurs through dissociative chemisorption, combustion, and reduction for the Ru(EtCp)2, oxygen and hydrogen steps, respectively, in a similar manner to processes using ozone and hydrogen as co-reactants reported previously. Moreover, we believe this molecular O2 and H2 based ABC-type ALD could be exploited for the ALD of other noble metals to decrease the deposition temperature and reduce oxygen impurities.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide

The atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H 2 -plasma pretreatment of the Au substrate prior to gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al 2 O 3 ALD inhibition. This is the first example of Al 2 O 3 ALD inhibition from a vapor-deposited SAM. Inhibition of Al 2 O 3 , ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. As a result, atomic force microscopy (AFM) and grazing incidence x-ray fluorescence (GIXRF) further reveals insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Controlling Nanoscale Pore Size and Wall Composition in Polycarbonate Membranes via Atomic Layer Deposition and Sequential Infiltration Synthesis: Implications for High Water Permeance

Polymer membranes have a wide variety of applications, ranging from water treatment to energy storage. Many of these applications require precise control over the membrane porosity and surface chemistry. In this study, we explore the modification of isoporous polycarbonate (PC) track-etched membranes (PCTEs) by atomic layer deposition (ALD) and sequential infiltration synthesis (SIS) to tune the pore size and the pore wall surface chemistry. We first performed a detailed study of Al 2 O 3 ALD and SIS in PCTE using a variety of in situ and ex situ measurements. We discovered that short precursor exposure times are critical to achieve conformal Al 2 O 3 ALD in the PCTE nanopores, while longer precursor exposure times resulted in Al 2 O 3 SIS within the bulk of the PC leaving the membranes brittle. Next, we tuned the PCTE pore size via Al 2 O 3 ALD and studied its effect on the water contact angle and the water permeance. Here, we found that the membranes became more hydrophilic, and the permeance decreased with increasing ALD Al 2 O 3 cycles. Finally, we studied the effect of hydrophilic (SnO 2 )/hydrophobic (In 2 O 3 ) ALD metal oxide coatings on membrane properties. We found that the most hydrophilic SnO 2 showed the highest water flux and the least hydrophilic In 2 O 3 showed the lowest water flux through the PCTE membranes. Our results demonstrate that ALD is an effective method to tune the surface and transport properties of PCTE membranes, but care must be exercised to avoid SIS and bulk modification of the polymer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Nanoscale Li, Na, and K ion-conducting polyphosphazenes by atomic layer deposition

A key trailblazer in the development of thin-film solid-state electrolytes has been lithium phosphorous oxynitride (LiPON), the success of which has led to recent progress in thin-film ion conductors. Here we compare the structural, electrochemical, and processing parameters between previously published LiPON and NaPON ALD processes with a novel ALD process for the K analogue potassium phosphorous oxynitride (KPON). In each ALD process, alkali tert-butoxides and diethylphosphoramidate are used as precursors. To understand the ALD surface reactions, this work proposes a reaction mechanism determined by in-operando mass spectrometry for the LiPON process as key to understanding the characteristics of the APON (A = Li, Na, K) family. As expected, NaPON and LiPON share similar reaction mechanisms as their structures are strikingly similar. KPON, however, exhibits similar ALD process parameters but the resulting film composition is quite different, showing little nitrogen incorporation and more closely resembling a phosphate glass. Due to the profound difference in structure, KPON likely undergoes an entirely different reaction mechanism. Furthermore, this paper presents a comprehensive summary of ALD ion conducting APON films as well as a perspective that highlights the versatility of ALD chemistries as a tool for the development of novel thin film ion-conductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Effect of atomic layer deposition temperature on current conduction in Al{sub 2}O{sub 3} films formed using H{sub 2}O oxidant

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al{sub 2}O{sub 3} films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al{sub 2}O{sub 3} metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO{sub 2} capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al{sub 2}O{sub 3} capacitors are found to outperform the SiO{sub 2} capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al{sub 2}O{sub 3} interface. The Al{sub 2}O{sub 3} electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al{sub 2}O{sub 3} capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al{sub 2}O{sub 3}. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al{sub 2}O{sub 3} capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al{sub 2}O{sub 3}/underlying SiO{sub 2} interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al{sub 2}O{sub 3} films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al{sub 2}O{sub 3} films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach

Alumina thin film is typically studied as a model atomic layer deposition (ALD) process due to its high dielectric constant, high thermal stability, and good adhesion on various wafer surfaces. Despite extensive applications of alumina ALD in microelectronics industries, details on the physical and chemical processes are not yet well understood. ALD experiments are not able to shed adequate light on the detailed information regarding the transient ALD process. Most of current numerical approaches lack detailed surface reaction mechanisms, and their results are not well correlated with experimental observations. In this paper, the authors present a combined experimental and numerical study on the details of flow and surface reactions in alumina ALD using trimethylaluminum and water as precursors. Results obtained from experiments and simulations are compared and correlated. By experiments, growth rate on five samples under different deposition conditions is characterized. The deposition rate from numerical simulation agrees well with the experimental results. Details of precursor distributions in a full cycle of ALD are studied numerically to bridge between experimental observations and simulations. The 3D transient numerical model adopts surface reaction kinetics and mechanisms based on atomic-level studies to investigate the surface deposition process. Surface deposition is shown as a strictly self-limited process in our numerical studies. ALD is a complex strong-coupled fluid, thermal and chemical process, which is not only heavily dependent on the chemical kinetics and surface conditions but also on the flow and material distributions.

42 ENGINEERING↗
DOE OSTI2015

Low temperature temporal and spatial atomic layer deposition of TiO{sub 2} films

Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80–120 °C) were used to grow moisture barrier TiO{sub 2} films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 Å/cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO{sub 2} films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO{sub 2}, but the deposition time could be reduced using SALD. The TiO{sub 2} films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 × 10{sup −4} g day{sup −1} m{sup −2} (38 °C and 90% RH) was measured for 20 nm of TiO{sub 2} film deposited by plasma-assisted ALD.

36 MATERIALS SCIENCE↗