NASA NTRS · 20060040544
Characteristics of Monolithically Integrated InGaAs Active Pixel Image Array
Abstract
Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate.
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Kim, Q., Cunningham, T. J., Pain, B., Lange, M. J., Olsen, G. H.. 1999-01-28. Characteristics of Monolithically Integrated InGaAs Active Pixel Image Array. https://ntrs.nasa.gov/citations/20060040544
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