Two-dimensional active pixel InGaAs focal plane arrays
Switching and amplifying characteristics of a newly developed two-dimesnional InGaAs Active Pixel Imager Array are presented.
two-dimensional↗
Engineering topics
Lange, M. J.
Publications and source records attributed to Lange, M. J..
Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array
Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.
Kim, Q.↗
Characteristics of Monolithically Integrated InGaAs Active Pixel Image Array
Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate.
Active Pixel Imager Dual (Visible/IR) responses Ac↗
Readout Characteristics of Integrated Monolithic InGaAs Active Pixel Sensor Array
A newly fabricated Monolithic InGaAs Active Pixel Image Sensor is presented, and its readout characteristics are described.
Readout↗
Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron
Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.
Ackley, D. E.↗