NASA NTRS · 19890000593
Internal Correction Of Errors In A DRAM
Abstract
Error-correcting Hamming code built into circuit. A 256 K dynamic random-access memory (DRAM) circuit incorporates Hamming error-correcting code in its layout. Feature provides faster detection and correction of errors at less cost in amount of equipment, operating time, and software. On-chip error-correcting feature also makes new DRAM less susceptible to single-event upsets.
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Zoutendyk, John A., Watson, R. Kevin, Schwartz, Harvey R., Nevill, Leland R., Hasnain, Zille. 1989-12-01. Internal Correction Of Errors In A DRAM. https://ntrs.nasa.gov/citations/19890000593
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