Distributed effect in GaAs MESFET

Abstract

In order to obtain higher output power, the width of a single cell MESFET must be large. When it becomes too large the distributed effect along the width direction tends to limit the output power. It is found that the distributed effect is important when the gate width not less than 150 microns and that the gain decreases with gate width. Also found is that spurious oscillations occur due to line resonances at much higher frequencies than can be accounted for by the instability factor in the discrete device model.