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Wang, Y.-C.

Publications and source records attributed to Wang, Y.-C..

Introduction to CAUSES: Description of Weather and Climate Models and Their Near‐Surface Temperature Errors in 5 Day Hindcasts near the Southern Great Plains

We introduce the Clouds Above the United States and Errors at the Surface (CAUSES) project with its aim of better understanding the physical processes leading to warm screen temperature biases over the American Midwest in many numerical models. In this first of four companion papers, 11 different models, from nine institutes, perform a series of 5 day hindcasts, each initialized from reanalyses. After describing the common experimental protocol and detailing each model configuration, a gridded temperature data set is derived from observations and used to show that all the models have a warm bias over parts of the Midwest. Additionally, a strong diurnal cycle in the screen temperature bias is found in most models. In some models the bias is largest around midday, while in others it is largest during the night. At the Department of Energy Atmospheric Radiation Measurement Southern Great Plains (SGP) site, the model biases are shown to extend several kilometers into the atmosphere. Finally, to provide context for the companion papers, in which observations from the SGP site are used to evaluate the different processes contributing to errors there, it is shown that there are numerous locations across the Midwest where the diurnal cycle of the error is highly correlated with the diurnal cycle of the error at SGP. This suggests that conclusions drawn from detailed evaluation of models using instruments located at SGP will be representative of errors that are prevalent over a larger spatial scale.

Morcrette, C. J.↗

Distributed effect in GaAs MESFET

In order to obtain higher output power, the width of a single cell MESFET must be large. When it becomes too large the distributed effect along the width direction tends to limit the output power. It is found that the distributed effect is important when the gate width not less than 150 microns and that the gain decreases with gate width. Also found is that spurious oscillations occur due to line resonances at much higher frequencies than can be accounted for by the instability factor in the discrete device model.

Wang, Y.-C.↗

An investigation of thermal resistance in single- and multiple-cell GaAs MESFETs

Thermal resistances among FETs of a variable number of gates in parallel are compared. Although the thermal resistance per cell for multiple cells is higher, the total thermal resistance is still low because all the cells are parallel to one another. This implies that the multiple-cell structure is capable of dissipating more power than the single-cell structure and therefore of being used as a power FET.

Wang, Y.-C.↗

Velocity overshoot effect on a short-gate microwave MESFET

The device parameters of short-gate GaAs and InP FETs have been found to be dependent on the nonequilibrium velocity overshoot phenomenon. Both saturation velocity and critical field are found to be larger for shorter gates. The v-E characteristics of Pucel et al. (1975) are modified. The cutoff frequency and other parameters for GaAs, InP, and Si are given as a function of gate length and bias. The cutoff frequency of InP MESFETs with a doping density of 10 to the 17th per cu cm is only 20% higher than those of equivalent GaAs MESFETs at 300 K. Comparison with other work is also presented.

Wang, Y.-C.↗