Engineering topics

Bahrami, M.

Publications and source records attributed to Bahrami, M..

5 records

NASA NTRS1985

Estimation of dynamic rotor loads for the rotor systems research aircraft: Methodology development and validation

The Rotor Systems Research Aircraft uses load cells to isolate the rotor/transmission systm from the fuselage. A mathematical model relating applied rotor loads and inertial loads of the rotor/transmission system to the load cell response is required to allow the load cells to be used to estimate rotor loads from flight data. Such a model is derived analytically by applying a force and moment balance to the isolated rotor/transmission system. The model is tested by comparing its estimated values of applied rotor loads with measured values obtained from a ground based shake test. Discrepancies in the comparison are used to isolate sources of unmodeled external loads. Once the structure of the mathematical model has been validated by comparison with experimental data, the parameters must be identified. Since the parameters may vary with flight condition it is desirable to identify the parameters directly from the flight data. A Maximum Likelihood identification algorithm is derived for this purpose and tested using a computer simulation of load cell data. The identification is found to converge within 10 samples. The rapid convergence facilitates tracking of time varying parameters of the load cell model in flight.

Duval, R. W.↗

NASA NTRS1983

Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

Wang, Y. C.↗

NASA NTRS1983

GaAs MESFET with lateral non-uniform doping

An analytical model of the GaAs MESFET with arbitrary non-uniform doping is presented. Numerical results for linear lateral doping profile are given as a special case. Theoretical considerations predict that better device linearity and improved F(T) can be obtained by using linear lateral doping when doping density increases from source to drain.

Wang, Y. C.↗

NASA NTRS1979

Distributed effect in GaAs MESFET

In order to obtain higher output power, the width of a single cell MESFET must be large. When it becomes too large the distributed effect along the width direction tends to limit the output power. It is found that the distributed effect is important when the gate width not less than 150 microns and that the gain decreases with gate width. Also found is that spurious oscillations occur due to line resonances at much higher frequencies than can be accounted for by the instability factor in the discrete device model.

Wang, Y.-C.↗

NASA NTRS1979

An investigation of thermal resistance in single- and multiple-cell GaAs MESFETs

Thermal resistances among FETs of a variable number of gates in parallel are compared. Although the thermal resistance per cell for multiple cells is higher, the total thermal resistance is still low because all the cells are parallel to one another. This implies that the multiple-cell structure is capable of dissipating more power than the single-cell structure and therefore of being used as a power FET.

Wang, Y.-C.↗