NASA NTRS · 19800000261
Double metalization for VLSI
Abstract
Postsintering process increases yield of double-layer metal conductors to almost 100 percent. When wafers containing double-metalized chips are sintered, metal layers react with oxide film remaining in insulation layer holes, breaking it up so that it no longer impedes electric current. Cooling also mechanically disrupts oxide film.
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Trotter, J. D., Wade, T. E.. 1980-09-01. Double metalization for VLSI. https://ntrs.nasa.gov/citations/19800000261
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