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Szofran, F. R.

Publications and source records attributed to Szofran, F. R..

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

Volz, M. P.↗
NASA NTRS1993

Initial development of a high-pressure crystal growth facility: Center director's discretionary fund

A low-cost, flexible, high-pressure (600 psi) system for crystal growth and related thermophysical properties measurements was designed, assembled, and tested. The furnace system includes a magnetically coupled translation mechanism that eliminates the need for a high-pressure mechanical feedthru. The system is currently being used for continuing crystal growth experiments and thermophysical properties measurements on several material systems including Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se.

Szofran, F. R.↗
NASA NTRS1993

Growth of ZnTe by Physical Vapor Transport and Traveling Heater Method

ZnTe crystals were grown by horizontal physical vapor transport (PVT) and a Te-solution vertical traveling heater method (THM). The grown crystals were examined by X-ray Laue diffraction technique and Hall measurements to determine the growth orientation and the electrical properties of the crystals. They were also characterized by low temperature infrared (IR) absorption measurements. Several sets of distinct peaks were observed in the IR absorption spectra for the THM samples and were identified as resulting from CU(2+) impurities. Similar measurements on vapor grown ZnTe showed featureless absorption spectra. Chemical analyses were carried out to measure the impurity content in various ZnTe samples and synchrotron radiation topography was used to Study crystalline microstructure of the (111) ZnTe single crystals grown by PVT.

Su, Ching-Hua↗
NASA NTRS1992

Vibronic spectra of Cu(2+) in ZnTe

Infrared-absorption spectra of substitutional Cu(2+) ions in ZnTe have been measured at 4.6 K. Several distinct absorption peaks are observed between 800 and 2000/cm. Absorption peaks at 1002 and 1069/cm are identified as zero-phonon lines arising from 2T2-2E transitions. Between 1069 and 2000/cm, several sets of sharp absorption lines are seen to recur regularly at an interval of 210/cm, corresponding to the LO phonon energy. Within each set distinct vibronic sidebands that cannot be identified with critical-point energies of TA, LA, TO or LO phonon modes are observed. A dynamic Jahn-Teller effect, involving coupling between a single-phonon mode and the electronic states of the 2E level, is proposed to account for the observed spectra.

Volz, M. P.↗
NASA NTRS1991

FTIR Spectroscopic Characterization Of II-VI Semiconductors

Combination of commercial Fourier-transform infrared (FTIR) spectrometer with computer and special-purpose software constitutes highly automated facility for acquisition and processing of infrared transmission or reflection spectral image data. Intended principally to acquire transmission spectra of some compounds of elements in groups II and VI of periodic table. System used to characterize specimens of II/VI alloy semiconductors grown by directional solidification and quenching. Transmission-edge maps helpful in studies of flows, gradients of temperature, and coefficients of diffusion in solidifying melts. Data acquired by system include optical characteristics, and they both verify and complement data obtained by such other techniques as measurements of density and x-ray-dispersion analysis.

Perry, G. L. E.↗
NASA NTRS1991

Directional solidification of HgCdTe and HgZnTe in a transverse magnetic field

Hg(0.80)Cd(0.20)Te crystals were grown vertically in a transverse magnetic field by directional solidification. The effect of a magnetic field on the nature of fluid flow in the melts was investigated by measuring compositional variations along the axial and radial directions of the grown ingots. Magnetic field effects were shown to be significant over the entire field range employed (i.e., 2 to 5 kG). The axial compositional profiles (determined by precision density measurements) showed an abrupt decrease in the mole fraction of CdTe when the field was applied. Radial compositional mapping by IR transmission and X-ray energy dispersion spectrometry indicated that the solid-liquid interface evolved through three stages when the field was applied (i.e., from a radially symmetric concave interface to an off-center concave shape when the field was initially applied, then to a tilted plane, and, finally, to an off-center concave interface). The axial compositional profile of an Hg(0.84)Zn(0.16)Te ingot showed similar field effects.

Su, Ching-Hua↗
NASA NTRS1991

Characterization of directionally solidified Hg(1-x)Zn(x)Se semiconducting alloys

Hg(1-x)Zn(x)Se alloys with composition between x = 0.08 and 0.115 were synthesized from elemental constituents and were resolidified using a Bridgman-Stockbarger growth technique. By performing precision mass-density measurements on selected wafers cut perpendicular to the growth axis, it was shown that the axial compositional profiles fit a numerical solution to the 1D diffusion equation which takes into account the variation of interface velocity with time. Infrared transmission-edge measurements performed on selected transverse slices from each ingot showed that the relative radial variations in composition decreased with decreasing growth rate. Van der Pauw measurements on selected wafers showed that the 10 exp 18/cu cm electron concentration, typical of as-grown crystals, could be reduced by approximately an order of magnitude by annealing in Se vapor.

Cobb, S. D.↗
NASA NTRS1991

Interface demarcation in Bridgman-Stockbarger crystal growth of II-VI compounds

In preparation for anticipated microgravity space missions carrying the Advanced Automated Directional Solidification Furnace, experiments were conducted to determine growth of interface in growing crystals of cadmium-doped germanium (test case), cadmium telluride, and mercury zinc telluride, using three different techniques. It was found that compositional variations detectable by microprobe and EDS techniques were most successful for detecting interfaces in materials with extensive transient regions, large segregation coefficients, and high alloy content.

Gillies, Donald C.↗
NASA NTRS1990

Growth and characterization of CdS crystals

A growth method for the physical vapor transport of compound semiconductors in closed ampoules is described. With the unique techniques applied in the heat treatment of the starting materials and the temperature profiles provided by the three-zone translational furnace, large crystals of CdS have been grown successfully by the method at lower temperatures than previously used. Both unseeded and seeded growth have been investigated. The CdS crystals were examined using optical and scanning electron microscopies (SEM) to study the microstructure and the dislocation etch-pits. The crystals were further characterized by infrared (IR) and ultraviolet (UV) transmission measurements.

Su, Ching-Hua↗
NASA NTRS1990

Microhardness variations in II-VI semiconducting compounds as a function of composition

A comparison is made of microhardness variations as a function of composition in directionally solidified alloys of Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Hg(1-x)Cd(x)Se, and Hg(1-x)Zn(x)Se, using the same growth method for all four systems in order to eliminate preparation-induced mechanical property variations. In each case, compositional analysis was performed next to a microhardness indentation. Due to the 14-percent shorter bond length of ZnTe relative to HgTe, Zn-base alloy mechanical strength should exceed that of Cd-base systems. Experimental verification is furnished for this hardening effect in both Hg(1-x)Zn(x)Te and Hg(1-x)Zn(x)Se.

Andrews, R. N.↗
NASA NTRS1989

Highly automated optical characterization with FTIR spectrometry

The procedure for evaluating the characteristics of II-VI semiconducting infrared sensor materials with a Fourier Transform Infrared (FTIR) spectrometer system will be discussed. While the method of mapping optical characteristics with a spectrometer has been employed previously, this system is highly automated compared to other systems where the optical transmission data are obtained using a FTIR system with a small stationary aperture in the optical path and moving the specimen behind the aperture. The hardware and software, including an algorithm developed for extracting cut-on wavelengths of spectra, as well as several example results, are described to illustrate the advanced level of the system. Additionally, data from transverse slices and longitudinal wafers of the aforementioned semiconductors will be used to show the accuracy of the system in predicting trends in materials such as shapes of growth interfaces and compositional uniformity.

Perry, G. L. E.↗
NASA NTRS1988

Growth of solid solution single crystals

Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed for the failure of conventional Bridgman-Stockbarger growth methods to produce high quality homogeneous crystals in the prescence of Earth's gravity. The deleterious effects are considered which arise from the dependence of the thermophysical properties on temperature and composition and from the large amount of heat carried by the fused silica ampules. An improved growth method, developed to optimize heat flow conditions, is described and experimental results are presented. The problems associated with growth in a gravitational environment are discussed. The anticipated advantages of growth in microgravity are given and the implications of the requirements for spaceflight experiments are summarized.

Lehoczky, S. L.↗
NASA NTRS1988

Growth and characterization of Hg(1-x)Cd(x)Se alloys

A detailed evaluation of the influence of growth conditions on the radial and axial compositional variations in directionally solidified Hg(1-x)Cd(x)Se alloys was performed. The measured axial compositional profiles were fitted to theoretical profiles to determine the effective solute (CdSe) diffusion coefficient (D) for the Hg(1-x)Cd(x)Se system. The value for D was estimated to be 3.0 + or - 0.5 x 10 to the -5th sq cm/s and did not appear to be significantly affected by the rate of crystal growth. The axial crystal uniformity was shown to be highly growth-rate dependent, with the faster growth rates producing crystals of more uniform composition in the axial direction. The magnitude of the radial variations was also shown to be highly growth-rate dependent, with the slower growth rates producing crystals of greater radial uniformity. This translation rate dependence of the radial uniformity is discussed in terms of lateral solute diffusion and convective interfacial fluid flows.

Andrews, R. N.↗
NASA NTRS1988

Compositional redistribution during casting of Hg(0.8)Cd(0.2)Te alloys

A series of Hg(0.8)Cd(0.2)Te ingots was cast both vertically and horizontally under well-defined thermal conditions by using a two-zone furnace with isothermal heat-pipe liners. The main objective of the experiments was to establish correlations between casting parameters and compositional redistribution and to develop ground-based data for a proposed flight experiment of casting of Hg(1-x)Cd(x)Te alloys under reduced gravity conditions. The compositional variations along the axial and radial directions were determined by precision density measurements, infrared transmission spectra, and X-ray energy dispersion spectrometry. Comparison between the experimental results and a numerical simulation of the solidification process of Hg(0.8)Cd(0.2)Te is described.

Su, Ching-Hua↗
NASA NTRS1988

Non-contact temperature measurement requirements for electronic materials processing

The requirements for non-contact temperature measurement capabilities for electronic materials processing in space are assessed. Non-contact methods are probably incapable of sufficient accuracy for the actual absolute measurement of temperatures in most such applications but would be useful for imaging in some applications.

Lehoczky, S. L.↗
NASA NTRS1988

Numerical simulation of heat transfer during the crystal growth of HgCdTe alloys

The effects of growth parameters on the thermal distribution during a Bridgman-Stockbarger-type crystal growth of HgCdTe alloys using short gradient zones are analyzed numerically. The analysis takes into account the change in the thermophysical properties upon freezing and considers both the temperature and composition dependences of the properties as well as translation rate effects. The calculated results compare favorably with previously published empirical results.

Dakhoul, Y. M.↗
NASA NTRS1988

Growth of HgZnTe alloy crystals by directional solidification

A series of Hg(1-x)Zn(x)Te crystals were grown by directional solidification with x ranging from 0.15 to 0.22. The axial and radial compositional variations were determined by precision density measurements, infrared (IR) transmission spectra, and energy dispersive X-ray spectroscopy (EDX). Comparison between the axial compositional profiles and the calculated results of a one-dimensional diffusion model gives a value for the effective diffusion coefficient in the HgZnTe melt of 2 to 4 x 10 to the -6th sq cm/s.

Su, Ching-Hua↗