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Szofran, F. R.

Publications and source records attributed to Szofran, F. R..

At least 91 records · Page 5

Internal temperature gradient of alloy semiconductor melts from interrupted growth experiments

Interrupted growth experiments on Hg(0.8)Cd(0.2)Se alloys were performed in an attempt to estimate the actual internal temperature gradient in the melt during directional solidification. The results have been analyzed in terms of a theoretical model which assumes an axial composition profile characteristic of diffusion controlled solute redistribution during growth. A comparison of the calculated and measured values suggests a reduction in the applied (empty furnace) temperature gradient by about a factor of three. Values of the interface segregation coefficient (k) determined from the phase diagram, predict values of solute concentration build up in the solid during growth interruptions which are inconsistent with measured results. It appears that the k values used tend to underestimate the actual k values for higher alloy compositions and overestimate k for the lower alloy compositions.

Andrews, R. N.↗

Highly automated transmission-edge mapping

Instrumentation and software are described, which are used to determine maps of properties of materials based on optical transmission spectra. In addition to a Fourier transform spectrometer, the hardware includes an xy-stage containing a small stationary aperture and two computer controlled stepper motors for positioning the sample. This idea has been used for years but this implementation is highly automated compared to those previously described. All mapping has been in the 2-15 micron wavelength range but this is not an inherent limitation of the technique. In this spectral range, useful results may be obtained with apertures as small as 25 microns in diameter. The software is described including the algorithm for obtaining the cut-on wavelength from a semiconductor spectrum. Data from both transverse slices and longitudinal slabs of narrow bandgap alloy semiconductors are shown including composition maps for materials solidified with convex and concave growth interfaces.

Szofran, F. R.↗

Growth of solid solution single crystals

Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed for the failure of conventional Bridgman-Stockbarger growth methods to produce high quality homogeneous crystals in the presence of Earth's gravity. The deleterious effects are considered which arise from the dependence of the thermophysical properties on temperature and composition and from the large amount of heat carried by the fused silica ampules. An improved growth method, developed to optimize heat flow conditions, is described and experimental results are presented. The problems associated with growth in a gravitational environment are discussed. The anticipated advantages of growth in microgravity are given and the implications of the requirements for spaceflight experiments are summarized.

Lehoczky, S. L.↗

Growth of solid solution single crystals

Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed for the failure of conventional Bridgman-Stockbarger growth methods to produce high quality homogeneous crystals in the presence of Earth's gravity. The deleterious effects are considered which arise from the dependence of the thermophysical properties on temperature and composition and from the large amount of heat carried by the fused silica ampules. An improved growth method, developed to optimize heat flow conditions, is described and experimental results are presented. The problems associated with growth in a gravitational environment are discussed. The anticipated advantages of growth in microgravity are given and the implications of the requirements for spaceflight experiments are summarized.

Lehoczky, S. L.↗

A method to eliminate wetting during the homogenization of HgCdTe

Adhesion of HgCdTe samples to fused silica ampoule walls, or 'wetting', during the homogenization process was eliminated by adopting a slower heating rate. The idea is to decrease Cd activity in the sample so as to reduce the rate of reaction between Cd and the silica wall.

Su, Ching-Hua↗

Characterizing Semiconductor Alloys for Infrared Sensors

Report presents results of continuing program aimed at characterizing mercury/cadmium/tellurium alloys and eventually developing improved methods of preparing alloys for use as infrared sensors. Work covered by report includes series of differential thermal analysis (DTA) measurements of alloy compositions with x varied from 9 to 1 in 0.1 increments.

Lehoczky, B. S. L.↗

Compositional redistribution during casting of Hg sub 0.8 Cd sub 0.2 Te alloys

A series of Hg(0.8)Cd(0.2)Te ingots was cast both vertically and horizontally under well-defined thermal conditions by using a two-zone furnace with isothermal heat-pipe liners. The main objective of the experiments was to establish correlations between casting parameters and compositional redistribution and to develop ground-based data for a proposed flight experiment of casting of Hg(1-x)Cd(x)Te alloys under reduced gravity conditions. The compositional variations along the axial and radial directions were determined by precision density measurements, infrared transmission spectra, and X-ray energy dispersion spectrometry. Comparison between the experimental results and a numerical simulation of the solidification process of Hg(0.8)Cd(0.2)Te is described.

Su, Ching-Hua↗

Automated ac galvanomagnetic measurement system

An automated, ac galvanomagnetic measurement system is described. Hall or van der Pauw measurements in the temperature range 10-300 K can be made at a preselected magnetic field without operator attendance. Procedures to validate sample installation and correct operation of other system functions, such as magnetic field and thermometry, are included. Advantages of ac measurements are discussed.

Szofran, F. R.↗

Growth of Solid Solution Crystals

The major objective of this program is to determine the conditions under which single crystals of solid solutions can be grown from the melt in a Bridgman configuration with a high degree of chemical homogeneity. The central aim is to assess the role of gravity in the growth process and to explore the possible advantages for growth in the absence of gravity. The alloy system being investigated is the solid solution semiconductor with x-values appropriate for infrared detector applications in Hg sub (1-x) Cd sub x Te the 8 to 14 micro m wavelength region. Both melt and Te-solvent growth are being considered. The study consists of an extensive ground-based experimental and theoretical research effort followed by flight experimentation where appropriate. Experimental facilities have been established for the purification, casting, and crystal growth of the alloy system. Facilities have been also established for the metallurgical, compositional, electric and optical characterization of the alloys. Crystals are being grown by the Bridgman-Stockbarger method and are analyzed by various experimental techniques to evaluate the effects of growth conditions on the longitudinal and radial compositional variations and defect densities in the crystals.

Lehoczky, S. L.↗

Solidification and crystal growth of solid solution semiconducting alloys

Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

Lehoczky, S. L.↗

Growing Crystals for Infrared Detectors

Unidirectional solidification yields bulk crystals with compositional homogeneity. Unidirectionaly crystal-growth furnace assembly travels vertically so crystal grows upward from bottom tapered end of ampoule. Separately controlled furnaces used for hot (upper) and cold (lower) zones. New process produces ingots with radial compositional homogeneity suitable for fabricating infrared detectors.

Lehoczky, S. L.↗

Further comments on segregation during Bridgman growth of Cd(x)Hg(1-x)Te

The authors comment on recent papers published by Capper et al. (1983) and Jones et al. (1983) which report and discuss the variation of composition with axial position in Bridgman-grown Cd(x)Hg(1-x)Te alloys. The validity of a diffusion-controlled model for non-mixing growth conditions is particularly noted.

Lehoczky, S. L.↗

Effect of growth parameters on compositional variations in directionally solidified HgCdTe alloys

A series of Hg(1-x)Cd(x)Te alloy crystals was grown by directional solidification with compositions ranging from x = 0.2 to x = 0.4. The measured axial compositional profiles were interpreted in terms of an exact numerical solution of the appropriate diffusion equation that takes into account both the variations of the segregation coefficient and solidification rate with composition. The solutions for all growth rates agree generally well with the experimental data, and confirm earlier observations that employed approximate analytical solutions. The effective mass diffusion coefficients showed no significant composition or melt temperature dependence. Slightly higher diffusion coefficients were obtained, however, for the highest growth rates.

Szofran, F. R.↗

A method for interface shape control during Bridgman type crystal growth of HgCdTe alloys

A method is described for interface shape control of Hg(1-x)Cd(x)Te alloys during Bridgman-type crystal growth. The authors have used this method for several years to obtain the flat or convex interface shapes required for simultaneously reducing radial compositional variations and crystal defects. The method turns to advantage the thick-walled, fused-silica ampules required for growing these alloys. A proper combination of furnace geometry (two isothermal zones separated by a thin barrier), upper- and lower-zone temperatures, and growth rate is required. Examples of results are reported.

Szofran, F. R.↗

Liquidus temperatures of Hg-rich Hg-Cd-Te alloys

Measurements are made of the liquidus temperatures for ten (Hg/1-x/Cd)Te/1-y/ compositions in which x ranges from 0.091 to 0.401 and y ranges from 0.544 to 0.952. It is found that for metal-rich melts with the same x value, the liquidus temperature increases with y when y is in the range 0.5-0.7. This behavior is explained by the higher degree of association between Cd and Te than between Hg and Te in the melts. It is noted that recent calculated values of the liquidus isotherms by Tung et al. (1982) are in fair to good agreement with the experimental results obtained here.

Szofran, F. R.↗

Application of the regular associated solution model to the Cd-Te and Hg-Te binary systems

The regular associated solution model is used to treat the phase diagrams of the binary II-VI semiconductor alloy systems Hg-Te and Cd-Te. The equations for the species activity coefficients are used without approximations regarding the magnitudes of the various binary interchange energies or the functional dependence on component mol fraction. The values of the four-adjustable parameters required for description of each system are fixed by fitting liquidus data, and the resulting activity coefficients are used to calculate component partial pressures, which are compared with experimental values as an indpendent check of the validity of the model. The results show that the regular associated solution model provides a usefully accurate, but not complete, description for both the Hg-Te and Cd-Te systems. The relationship of this work to previous investigations is discussed.

Kelley, J. D.↗

Directional solidification and characterization of Hg(1-x)Cd(x)Te alloys

A series of Hg(1-x)Cd(x)Te alloy crystals was grown by high temperature gradient directional solidification at furnace translation rates ranging from 0.068 to 1.12 microns/s. For several ingots, the measured longitudinal compositional profiles were fitted to theoretical profiles to estimate the magnitude of D, the liquid HgTe-CdTe interdiffusion coefficient. The best-fit value of D was about 550,000 sq cm/s. The majority of the ingots showed significant radial compositional variations along the growth axis. These variations are attributed, at least in part, to fluid flows ahead of the growth interface. The results are discussed in terms of the heat transfer characteristics of the alloy/ampule/furnace system, and on the effects of these characteristics on the shape and stability of the growth interface in a 1-g environment.

Lehoczky, S. L.↗

Electrical characterization of Hg(1-x)Cd(x)Te alloys

Theoretical models are described for calculations of charge-carrier concentrations, Fermi energy, and conduction electron mobility as functions of x, temperature, and ionized and neutral defect concentrations of Hg(1-x)Cd(x)Te alloys. Measurements are reported of electron concentration and electron mobility from 5-300 K for alloys with x values of between 0.17 and 0.30. The electrical data are in reasonable agreement with theory, and were analyzed to obtain estimates of donor and acceptor state concentrations. The electron mobilities are calculated in terms of a microscopic theory of electrical conduction derived from the solution of the Boltzmann equation for the perturbed steady-state electron distribution function, and they show that longitudinal optical-phonon and charged and neutral defect scattering are the dominant mobility-limiting mechanisms.

Lehoczky, S. L.↗