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Maserjian, J.

Publications and source records attributed to Maserjian, J..

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Trapping effects in irradiated and avalanche-injected MOS capacitors

The trapping parameters for holes, and for electrons in the presence of trapped holes, have been measured from a set of wafers with different oxide thickness processed under controlled conditions. The trap cross-sections and densities indicate at least three trap species, including an interfacial species, a dominant bulk species which is determined to tail off from the silicon interface, and a third, lower density bulk species that is distributed throughout the oxide.

Bakowski, M.↗
NASA NTRS1978

Measuring oxide trapping parameters in MOS structure

System for controlled injection of electrons or holes into oxide layer of MOS capacitor can be used to measure oxide trapping parameters. Since trapping mechanisms can cause degradation and ultimate failure of MOS elements exposed to ionizing radiation, system can be helpful in predicting device tolerance.

Maserjian, J.↗
NASA NTRS1978

Induced junction solar cell and method of fabrication

An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.

Maserjian, J.↗
NASA NTRS1978

Model for MOS field-time-dependent breakdown

A quantitative model for MOS breakdown is derived and correlated with experiments. The data were obtained by enhancing the effect of ion emission on breakdown through controlled ion-implantation damage prior to gate oxidation in an otherwise normal and clean MOS process

Li, S. P.↗
NASA NTRS1977

Experimental observations of the chemistry of the SiO2/Si interface

Changes in silicon surface preparation prior to thermal oxidation are shown to leave a signature by altering the final SiO2/Si interface structure. Surface analytical techniques, including XPS, static SIMS, ion milling, and newly developed wet-chemical profiling procedures are used to obtain detailed information on the chemical structure of the interface. The oxides are shown to be essentially SiO2 down to a narrow transitional interface layer (3-7 A). A number of discrete chemical species are observed in this interface layer, including different silicon bonds (e.g., C-, OH-, H-) and a range of oxidation states of silicon (0 to +4). The effect of surface preparation and the observed chemical species are correlated with oxide growth rate, surface-state density, and flatband shifts after irradiation.

Grunthaner, F. J.↗
NASA NTRS1977

Chemical vapor deposition reactor

An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

Chern, S. S.↗
NASA NTRS1976

Model for thickness dependence of radiation charging in MOS structures

The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The contribution of hole trapping causes the flatband voltage to increase with thickness in a manner in which square and cube dependences are limiting cases. Experimental measurements on samples covering a 200 - 1000 A range of oxide thickness are consistent with the model, using independently obtained values of hole-trapping parameters. An important finding of our experimental results is that a negative interface charge contribution due to surface states created during irradiation compensates most of the positive charge in the oxide at flatband. The tendency of the surface states to 'track' the positive charge buildup in the oxide, for all thicknesses, applies both in creation during irradiation and in annihilation during annealing. An explanation is proposed based on the common defect origin of hole traps and potential surface states.

Viswanathan, C. R.↗
NASA NTRS1976

Effective defect density for MOS breakdown - Dependence on oxide thickness

A new procedure for measuring effective defect density takes time-dependent primary dielectric breakdown in MOS devices into account. A time-varying breakdown probability is obtained by applying a constant field stress to a statistically sufficient number of MOS capacitors. Effective defects are assumed distributed randomly in two dimensions, hence indistinguishable. The effective defect density is found to vary with oxide thickness; tentative explanations are ventured to account for this (interfacial tensile stress, ion patching enhanced by local trapping, breakdown in the form of filamentary discharges with release of stored electrostatic energy).

Li, S. P.↗
NASA NTRS1976

Method and apparatus for measurement of trap density and energy distribution in dielectric films

Trap densities in dielectric films are determined by tunnel injection measurements when the film is incorporated in an insulated-gate field effect transistor. Under applied bias to the transistor gate, carriers (electrons or holes) tunnel into traps in the dielectric film. The resulting space charge tends to change channel conductance. By feeding back a signal from the source contact to the gate electrode, channel conductance is held constant, and by recording the gate voltage as a function of time, trap density can be determined as a function of distance from the dielectric-semiconductor interface. The process is repeated with the gate bias voltage at different levels in order to determine the energy distribution of traps as a function of distance from the interface.

Maserjian, J.↗
NASA NTRS1976

Time-dependent MOS breakdown

A general model for time-dependent breakdown in metal-oxide-silicon (MOS) structures is developed and related to experimental measurements on samples deliberately contaminated with Na. A statistical method is used for measuring the breakdown probability as a function of log time and applied field. It is shown that three time regions of breakdown can be explained respectively in terms of silicon surface defects, ion emission from the metal interface, and lateral ion diffusion at the silicon interface.

Li, S. P.↗
NASA NTRS1975

Measurement of trap density in dielectric film

Method uses basic circuit to examine quality and trap density of film used in insulated gate field effect transistors. Data are measured as function of performance and life expectancy.

Guisinger, J. E.↗
NASA NTRS1975

Improved chemical vapor-deposition reactor

Formation of large particles on substrate is eliminated by actively exhausting reacted gases. Effluent gas backflow is prevented by pumping in curtain of nitrogen above fresh reactive gases from several directions.

Chern, S. S.↗
NASA NTRS1975

Oscillations in MOS tunneling

Oscillatory deviations from Fowler-Nordheim tunneling currents were measured in MOS capacitors with oxide thicknesses ranging from 30 to 75 A. The observed variation of oscillation phases and amplitudes with oxide thickness indicates that the Si-SiO2 interface is independent of oxide thickness only for thicknesses greater than 65 A. At lower thicknesses, the barrier height at the interface decreases gradually with oxide thickness at a rate on the order of 10 mV/A. At higher thicknesses, the barrier height is 4.08 eV. The energy dispersion relation with the SiO2 conduction band is parabolic. The mean free path within the SiO2 conduction band is on the order of 13 A.

Lewicki, G.↗
NASA NTRS1975

Laser scanned image sensors using photoconductors with deep traps

Photoconductor records image when holes and electrons are trapped inside it due to incident photons. Image can be read out by exposing photoconductor to scanning laser beam. Photons from scanning laser empty traps, generating photocurrent. Image information is obtained by detecting this photocurrent synchronously with laser scan.

Maserjian, J.↗
NASA NTRS1975

Electron radiation effects on time-dependent dielectric breakdown in SiO2 films

An experiment testing the effect of ionizing radiation on breakdown characteristics of SiO2 films is presented. Silicon wafers were oxidized and metallized, and a capacitor array was etched into a control sample while the rest were first irradiated with 1 MeV electrons and then etched. Time-dependent dielectric tests were made on all the capacitors, and the average characteristics of 96 capacitors are illustrated graphically. The curves are consistent with the model of holes trapped in the SiO2 film during irradiation leading to a retarding field for positive ion emission and drift toward the interface. It is shown how an externally applied field is reduced by the trapped charge, and that changes in the dielectric breakdown properties of the SiO2 film after irradiation depend on the positive trapped charge near the metal interface.

Li, S. P.↗
NASA NTRS1975

Deep trap, laser activated image converting system

Receiving an optical image on the surface of a photoconducting semiconductor is presented, storing the image in deep traps of the semiconductor, and later scanning the semiconductor with a laser beam to empty the deep traps, thereby producing a video signal. The semiconductor is illuminated with photons of energy greater than the band gap producing electron-hole pairs in the semiconductor which subsequently fill traps in energy from the band edges. When the laser beam of low energy photons excites the trapped electrons and holes out of the traps into the conduction and valence bands, a photoconductivity can be observed.

Maserjian, J.↗
NASA NTRS1975

Tunnel injection into gate oxide traps

An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co-60 irradiation. The results are related to long-term drift of threshold voltage.

Maserjian, J.↗