NASA NTRS · 19790037722
Model for MOS field-time-dependent breakdown
Abstract
A quantitative model for MOS breakdown is derived and correlated with experiments. The data were obtained by enhancing the effect of ion emission on breakdown through controlled ion-implantation damage prior to gate oxidation in an otherwise normal and clean MOS process
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Li, S. P., Prussin, S., Maserjian, J.. 1978-01-01. Model for MOS field-time-dependent breakdown. https://ntrs.nasa.gov/citations/19790037722
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